Patents by Inventor Tetsuya Niya

Tetsuya Niya has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20170233860
    Abstract: A manufacturing method for a component in a plasma processing apparatus is provided. The method includes: performing a surface conditioning on a surface of an underlying layer on which a film is to be formed by thermal spraying, the surface of the underlying layer includes a surface of a base or a surface of a layer formed on the surface of the base; and forming the film on the surface of the underlying layer by thermally spraying yttrium fluoride. A high velocity oxygen fuel spraying method or an atmospheric plasma spraying method is used in the forming of the film.
    Type: Application
    Filed: May 4, 2017
    Publication date: August 17, 2017
    Inventors: Nobuyuki Nagayama, Koji Mitsuhashi, Shikou Abukawa, Masaya Nagai, Yoshinori Kanazawa, Tetsuya Niya
  • Publication number: 20160076129
    Abstract: Particle generation can be suppressed from a thermally sprayed film of yttrium fluoride. A component exposed to plasma in a plasma processing apparatus is provided. The component includes a base and a film. The base is made of aluminum or an aluminum alloy, and an alumite film may be formed on a surface of the base. The film is formed by thermally spraying yttrium fluoride on a surface of the base or on a surface of an underlying layer including a layer provided on the base. A porosity of the film is 4% or less, and an arithmetic mean roughness of a surface of the film is 4.5 ?m or less.
    Type: Application
    Filed: September 15, 2015
    Publication date: March 17, 2016
    Inventors: Nobuyuki Nagayama, Koji Mitsuhashi, Shikou Abukawa, Masaya Nagai, Yoshinori Kanazawa, Tetsuya Niya
  • Patent number: 8896210
    Abstract: A plasma processing apparatus includes a processing chamber; a lower electrode serving as a mounting table for mounting thereon a target object; and an upper electrode or an antenna electrode provided to be opposite to the lower electrode. The apparatus further includes a gas supply source for introducing a gas including a halogen-containing gas and an oxygen gas into the processing chamber and a high frequency power supply for applying a high frequency power for generating plasma to at least one of the upper electrode, the antenna electrode, or the lower electrode. Among inner surfaces of the processing chamber which are exposed to the plasma, at least a part of or all of the surfaces between a mounting position of the target object and the upper electrode, or the antenna electrode; or at least a part of or all of the surfaces of the upper electrode or the antenna electrode are coated with a fluorinated compound.
    Type: Grant
    Filed: December 5, 2012
    Date of Patent: November 25, 2014
    Assignees: Tokyo Electron Limited, Tocalo Co., Ltd.
    Inventors: Masaru Nishino, Masatsugu Makabe, Nobuyuki Nagayama, Tatsuya Handa, Ryotaro Midorikawa, Keigo Kobayashi, Tetsuya Niya