Abstract: An antenna unit to be used by being installed so as to face window glass of a building, the antenna unit including a radiating element, a reflective member configured to reflect electromagnetic waves radiated from the radiating element toward outside of the building, and a support unit configured to removably support the reflective member. An antenna unit attachment method includes installing an antenna unit so as to face window glass for a building, the antenna unit having a radiating element and a support unit, and supporting a reflective member that reflects electromagnetic waves radiated from the radiating element by the support unit on an outdoor side relative to the radiating element.

Abstract: An image processing apparatus includes: an extraction unit configured to extract a written image additionally written on printed matter on which a document is written from a read image read from the printed matter; and a generation unit configured to generate additionally written document data by writing written image information about the written image into document data that is the document described in a mark-up language.

Abstract: A first information source has a plurality of pieces of first information, having a plurality of items, stored therein. The plurality of items of each piece of the first information is compared with a plurality of items of a piece of second information one by one. If there is an exactly matched item, such item is counted as a first value; and there is a partially matched item, such item is counted as a second value smaller than the first value. A person indicated by the first information having the largest total sum of the count is identified as the person indicated in the second information source.

Abstract: Before executing a job, a printer performs an estimation of a billing amount with use of a simplified billing table, and if the estimated billing amount exceeds a balance, execution of the job is cancelled, and if within the balance, the job is executed. After the job is finished, the printer judges whether the estimated billing amount is correct according to detailed job information and a detailed billing table. If an error exists, the printer corrects the error and performs the correct billing.

Abstract: An image processing apparatus includes: an extraction unit configured to extract a written image additionally written on printed matter on which a document is written from a read image read from the printed matter; and a generation unit configured to generate additionally written document data by writing written image information about the written image into document data that is the document described in a mark-up language.

Abstract: A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a manner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y?0.15X-4.5 when X<100 and meet Y?10 when X?100.

Abstract: According to the present invention, there is provided a method for manufacturing a silicon single crystal wafer, wherein a first heat treatment for holding a silicon single crystal wafer in an oxygen containing atmosphere at a first heat treatment temperature for 1 to 60 seconds and cooling it to 800° C. or less at a temperature falling rate of 1 to 100° C./second by using a rapid heating/rapid cooling apparatus is performed to inwardly diffuse oxygen and form an oxygen concentration peak region near a surface of the silicon single crystal wafer, and then a second heat treatment is performed to agglomerate oxygen in the silicon single crystal wafer into the oxygen concentration peak region. As a result, it is possible to provide the method for manufacturing a silicon single crystal wafer that enables forming an excellent gettering layer close to a device forming region.

Abstract: According to the present invention, there is provided a method for manufacturing a silicon single crystal wafer, wherein a first heat treatment for holding a silicon single crystal wafer in an oxygen containing atmosphere at a first heat treatment temperature for 1 to 60 seconds and cooling it to 800° C. or less at a temperature falling rate of 1 to 100° C./second by using a rapid heating/rapid cooling apparatus is performed to inwardly diffuse oxygen and form an oxygen concentration peak region near a surface of the silicon single crystal wafer, and then a second heat treatment is performed to agglomerate oxygen in the silicon single crystal wafer into the oxygen concentration peak region. As a result, it is possible to provide the method for manufacturing a silicon single crystal wafer that enables forming an excellent gettering layer close to a device forming region.

Abstract: A method for manufacturing a silicon substrate, including: performing a rapid heat treatment to a silicon substrate with a rapid-heating and rapid-cooling apparatus by maintaining the silicon substrate at a temperature that is higher than 1300° C. and not greater than a silicon melting point for 1 to 60 seconds, the silicon substrate being sliced from a silicon single crystal ingot grown by the Czochralski method; performing a first temperature decrease process down to a temperature in the range of 600 to 800° C. at a temperature decrease rate of 5 to 150° C./sec; and performing a second temperature decrease process in such a mariner that a cooling time of X seconds and a temperature decrease rate of Y° C./sec meet Y?0.15X?4.5 when X<100 and meet Y?10 when X?100.

Abstract: The present invention is a method for heat-treating a wafer, the method by which heat treatment at a predetermined temperature with rapid rise and fall of temperature is performed by performing heating by a heating source in a state in which a principal surface (a first principal surface) of a wafer is supported by a supporting member, the method in which heat treatment is performed with control of the heating source being performed in such a way that the temperature of the first principal surface supported by the supporting member becomes 1 to 25° C. higher than the temperature of a principal surface (a second principal surface) opposite to the first principal surface of the wafer. As a result, a method for heat-treating a wafer, the method that can reliably suppress a slip dislocation generated from a wafer supporting position when heat treatment is performed on a silicon wafer, is provided.

Abstract: A silicon wafer and method for producing a silicon wafer, including at least: a first heat treatment process in which rapid heat treatment is performed on the wafer by using a rapid heating/cooling apparatus in an atmosphere containing at least one of nitride film formation atmospheric gas, rare gas, and oxidizing gas at a temperature higher than 1300° C. and lower than or equal to a silicon melting point for 1 to 60 seconds; and a second heat treatment process in which temperature and atmosphere are controlled to suppress generation of a defect caused by a vacancy in the wafer and rapid heat treatment is performed on the wafer. Therefore, RIE defects such as oxide precipitates, COPs, and OSFs are not present at a depth of at least 1 ?m from the surface, which becomes a device fabrication region, and the lifetime is 500 ?sec or longer.

Abstract: An image processing apparatus comprises: a display part on which various information is displayed; an authentication information inputting part for receiving entry of authentication information made by a user; a setting information inputting part for receiving an operation to set made by the user, and inputting setting information; an authentication processing part for starting authentication processing to execute user authentication based on the authentication information in response to the entry of the authentication information; and a display controlling part for displaying an initial operation screen operable for the user to make setting on the display part in parallel with the authentication processing executed by the authentication processing part, and for reflecting the setting information received by the setting information inputting part before obtaining a result of the authentication processing to the initial operation screen.

Abstract: The present invention is a silicon single crystal wafer grown by the Czochralski method, the silicon single crystal wafer in which an wafer entire plane is an N region located outside OSFs which are generated in the form of a ring when thermal oxidation treatment is performed and contains no defect region detected by the RIE process. As a result, a silicon single crystal wafer which belongs to none of a vacancy-rich V region, an OSF region, a Dn region in an Nv region, the Dn region in which a defect detected by the Cu deposition process is generated, and an interstitial silicon-rich I region and can improve the TDDB characteristic which is the time dependent breakdown characteristic of an oxide film more reliably than a known silicon single crystal wafer is provided, and the silicon single crystal wafer is provided under stable production conditions.

Abstract: Before executing a job, a printer performs an estimation of a billing amount with use of a simplified billing table, and if the estimated billing amount exceeds a balance, execution of the job is cancelled, and if within the balance, the job is executed. After the job is finished, the printer judges whether the estimated billing amount is correct according to detailed job information and a detailed billing table. If an error exists, the printer corrects the error and performs the correct billing.

Abstract: Novel muramyldipeptide derivatives such as [6-0-(2-tetradecylhexadecanoyl)-N-acetylmuramoyl]-L-alanyl-D-glutamamide and [6-0-(2-tetradecylhexadecanoyl)-N-acetylmuramoyl]-L-alanyl-N -methyl-D-glutamamide are provided. The muramyldipeptide derivatives are excellent compound as an adjuvant or a constituting component of virosome vaccine. An influenza vaccine comprises a complex of the muramyldipeptide derivative and an influenza virus antigen. The influenza vaccine has excellent antibody-producing capacity and safety.

Abstract: Disclosed is a method for the purification of an influenza virus, which comprises subjecting a solution containing the influenza virus to column chromatography using, as a gel for chromatography, a sulfuric acid ester of cellulose or a crosslinked polysaccharide. The method can provide highly purified influenza virus which is useful for obtaining an effective vaccine against influenza.