Abstract: A plurality of electromagnetic wave radiation waveguides are formed to branch from an electromagnetic wave distribution waveguide. A plurality of slots are provided to each electromagnetic wave radiation waveguide. A width of the electromagnetic wave radiation waveguide, a height of the electromagnetic wave radiation waveguide and an electromagnetic wave radiation waveguide cycle p are set to satisfy a relationship of ?0>p>a2>b2 and p=(?g1/2)+±? (where ? is 5% or below of ?g1), where ?0 is a free space wavelength of an electromagnetic wave, al is a width of the electromagnetic wave distribution waveguide, ?r1 is a specific inductive capacity of a dielectric material in the electromagnetic wave distribution waveguide, and ?g1 is a wavelength of the electromagnetic wave output from the electromagnetic wave source in the electromagnetic wave distribution waveguide.

Abstract: Oil supply grooves (74, 84) are formed respectively in a rotating shaft (70) of a compression mechanism (50) integral with an electric motor (40) and in a rotating shaft (80) of an expansion mechanism (60). The rotating shafts (70, 80) are coupled together by engagement between an engagement convex portion (85) and an engagement concave portion (75) which are formed respectively in shaft ends of the rotating shafts (70, 80). And, a seal groove (S) is formed in the peripheral surface of the engagement convex portion (85) and an O-ring (R) is engaged into the seal groove (S). Hereby, lubrication oil leakage from between the engagement convex portion (85) and the engagement concave portion (75) is prevented.

Abstract: A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Abstract: Two rotary mechanism parts (70, 80) are provided in a rotary expander (60). The first rotary mechanism part (70) is smaller in displacement volume than the second rotary mechanism part (80). A first low-pressure chamber (74) of the first rotary mechanism part (70) and a second high-pressure chamber (83) of the second rotary mechanism part (80) are fluidly connected together by a communicating passageway (64), thereby forming a single expansion chamber (66). High-pressure refrigerant introduced into the first rotary mechanism part (70) expands in the expansion chamber (66). An injection passageway (37) is fluidly connected to the communicating passageway (64). When an motor-operated valve (90) is placed in the open state, high-pressure refrigerant is introduced into the expansion chamber (66) also from the injection passageway (37). This makes it possible to inhibit the drop in power recovery efficiency, even in the condition that causes the actual expansion ratio to fall below the design expansion ratio.

Abstract: A rotary type expander (60) is provided with two rotary mechanism parts (70, 80). These two rotary mechanism parts (79, 80) differ from each other in displacement volume. The outflow side of the first rotary mechanism part (70) of small displacement volume is fluidly connected to the inflow side of the second rotary mechanism part (80) of large displacement volume. In addition, the process in which the volume of a first low-pressure chamber (74) in the first rotary mechanism part (70) decreases is in synch with the process in which the volume of a second high-pressure chamber (83) in the second rotary mechanism part (80) increases. Refrigerant at high pressure is first introduced into a first high-pressure chamber (73) of the first rotary mechanism part (70). Thereafter, this high-pressure refrigerant passes through a communicating passage (64) and then flows by way of the first low-pressure chamber (74) into the second high-pressure chamber (83) while expanding.

Abstract: Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

Abstract: Disclosed is a displacement type expansion machine. In the displacement type expansion machine, a communicating passage (72) for allowing fluid communication between an expansion-process intermediate position and an outflow position in an expansion chamber (62) is provided thereby to allow the fluid at the outflow side to return to the expansion chamber (62). Such arrangement prevents the pressure of the expansion chamber (62) from being lowered to an excessive extent in predetermined operating conditions, thereby avoiding the drop in power recovery efficiency.

Abstract: A refrigerant circuit (10) of a refrigeration apparatus is filled up with carbon dioxide as a refrigerant. In the refrigerant circuit (10), a first compressor (21) and a second compressor (22) are arranged in parallel. The first compressor (21) is connected to both an expander (23) and a first electric motor (31), and is driven by both of the expander (23) and the first electric motor (31). On the other hand, the second compressor (22) is connected only to a second electric motor (32), and is driven by the second electric motor (32). In addition, the refrigerant circuit (10) is provided with a bypass line (40) which bypasses the expander (23). The bypass line (40) is provided with a bypass valve (41). And, the capacity of the second compressor (22) and the valve opening of the bypass valve (41) are regulated so that the COP of the refrigeration apparatus is improved after enabling the refrigeration apparatus to operate properly in any operation conditions.

Abstract: A high-quality dielectric film is formed by generating plasma of a high electron density by a method such as diluting a rare gas or raising a frequency of a power supplier, and generating oxygen atoms or nitrogen atoms of a high density. The dielectric film contains silicon oxide in which the composition ratio of silicon and oxygen is between (1:1.94) and (1:2) both inclusive, silicon nitride in which the composition ratio of silicon and nitrogen is between (1:1.94) and (1:2) both inclusive, or silicon oxynitride in which the composition ratio of silicon and nitrogen is between (3:3.84) and (3:4) both inclusive.

Abstract: Disclosed is a plasma processing apparatus for performing a plasma processing, comprising an electromagnetic wave source for generating an electromagnetic wave, a rectangular waveguide, a plurality of slots formed in the rectangular waveguide and constituting a waveguide antenna, an electromagnetic wave radiation window consisting of a dielectric body, and a vacuum chamber, wherein a plasma is generated by an electromagnetic wave radiated from the slots into the vacuum chamber through the electromagnetic wave radiation window, the plasma processing apparatus being constructed to include an electromagnetic wave distributing waveguide portion for distributing the electromagnetic wave generated from the electromagnetic wave source into each of the waveguides, the plural waveguides being branched from the electric field plane or a plane perpendicular to the magnetic field plane of the electromagnetic wave distributing waveguide portion.

Abstract: A substrate processing apparatus includes a light source, a plurality of light transmitting windows, and a reaction chamber, in which a substrate is placed. And a surface of the substrate, which opposes the light transmitting windows is processed by using a reaction which occurs when the light from the light source is irradiated into the reaction chamber through the light transmitting windows. This substrate processing apparatus includes a driving mechanism which moves the substrate relative to the light transmitting windows in a direction parallel to the surface. The width of each of the light transmitting windows in the direction in which the substrate moves relative to the light transmitting windows is smaller than the length of the substrate in the moving direction.

Abstract: A plasma processing apparatus comprises: a chamber 12 having at least one opening and for generating plasma; a dielectric member 14 provided to cover the opening air-tightly; at least one wave guide 16 provided in the exterior of the chamber such that the one end side opposes the dielectric member; an electromagnetic wave source 20 provided on the other end side of the wave guide; a plurality of holes 38, 40, 42, 44, 46 provided on a surface opposing the dielectric member of the wave guide; and hole area adjusting means 18 provided in at least one of the above-mentioned holes so as to adjust the opening area of the hole.

Abstract: A method for forming an insulator film at a semiconductor temperature of 600° C. or less comprises the steps of forming a first insulator film by oxidizing a surface of a semiconductor in an atmosphere containing oxygen atom radicals, and forming a second insulator film on the first insulator film by deposition without exposing the first insulator film to outside air.

Abstract: The invention provides apparatus for forming an insulating film which is able to reduce the decrease in the light amount due to the light transmittable window, to process the large scale base plate, and to improve the oxidation speed.

Abstract: A method for forming an insulator film at a semiconductor temperature of 600° C. or less comprises the steps of forming a first insulator film by oxidizing a surface of a semiconductor in an atmosphere containing oxygen atom radicals, and forming a second insulator film on the first insulator film by deposition without exposing the first insulator film to outside air.

Abstract: A film formation device for forming a film on a substrate according to the present invention includes: a plurality of vacuum chambers, each of the plurality of vacuum chambers including a gas introduction section for introducing a reactive gas, a plasma generation section for generating a plasma, and a support member for supporting the substrate. The plasma generation section in at least one of the plurality of vacuum chambers is disposed at a predetermined position for preventing the substrate from sustaining substantial irradiation damage by the generated plasma.