Patents by Inventor Tetsuya Osaka

Tetsuya Osaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100221841
    Abstract: A semiconductor DNA sensing device is provided herein, which includes a detection section with a field-effect transistor including a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, the first insulating layer including silicon oxide or an inorganic oxide, a first organic monolayer formed on the first insulator layer, the first organic monolayer comprising an organic molecule having a reactive functional group, and a probe DNA containing 3 to 35 nucleotides bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker, the structure of the probe DNA/the first organic monolayer/the insulating layer/the semiconductor constituting the detection section.
    Type: Application
    Filed: March 3, 2010
    Publication date: September 2, 2010
    Inventors: Tetsuya OSAKA, Daisuke Niwa, Norikazu Motohashi
  • Publication number: 20100144047
    Abstract: Molecular sensing of target molecules is performed by using an electrode for molecular sensing in which detecting molecules which can shift a surface potential of the electrode by an interaction with the target molecules are bound directly or via coupling molecules to surface hydroxyl groups on a conductive metal oxide. By this molecular sensing, specific target molecules can be detected selectively and stably with high accuracy. It is also possible to detect an enantiomer selectively and stably with high accuracy. The present invention can provide a chemical sensing system which is useful in fields such as medicines, environments and foods.
    Type: Application
    Filed: December 4, 2008
    Publication date: June 10, 2010
    Applicant: WASEDA UNIVERSITY
    Inventors: Tetsuya Osaka, Mariko Matsunaga, Tsubasa Ueno
  • Publication number: 20100006326
    Abstract: A method of manufacturing ULSI wiring in which wiring layers are separately formed via a diffusion prevention layer with an insulating interlayer portion made of SiO2. The method comprises the steps of treating, with a silane compound, an SiO2 surface on which the insulating interlayer portion is to be formed, performing catalyzation with an aqueous solution containing a palladium compound, forming the diffusion prevention layer by electroless plating, and then forming the wiring layer on this diffusion prevention layer. Furthermore, a capping layer is formed on the wiring layer by electroless plating. Consequently, the diffusion prevention layer having good adhesive properties can all be formed through a simple process by wet processes, and further, the wiring layer can directly be formed on this diffusion prevention layer by the wet process. In addition, the capping layer can directly be formed on this wiring layer by electroless plating.
    Type: Application
    Filed: September 23, 2009
    Publication date: January 14, 2010
    Applicants: NEC ELECTRONICS CORPORATION, WASEDA UNIVERSITY
    Inventors: Kazuyoshi Ueno, Tetsuya Osaka, Nao Takano
  • Patent number: 7591911
    Abstract: A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm3 in terms of gold, a cobalt salt in a concentration of 0.02 to 0.2 mol/dm3 in terms of cobalt, and a tungstate in a concentration of 0.1 to 0.5 mol/dm3 in terms of tungsten. The gold-cobalt based amorphous alloy plated film obtained consists of a homogeneous amorphous phase not having microcrystals, and has an enhanced hardness while retaining the good contact resistance and chemical stability intrinsic of gold on such levels as to be free of problems on a practical use basis; therefore, the gold-cobalt based amorphous alloy plated film is effective for use as a contact material in electric and electronic component parts such as relays.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: September 22, 2009
    Assignees: Kanto Kagaku Kabushiki Kaisha, Waseda University
    Inventors: Kazutaka Senda, Masaru Kato, Tetsuya Osaka, Yutaka Okinaka
  • Patent number: 7547972
    Abstract: The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier layer is interposed between the substrate and the copper layer, and the barrier layer is formed by electroless plating. And the laminated structure is characterized in that the barrier layer is formed on the substrate with a monomolecular layer of organosilane compound and a palladium catalyst which are interposed between the substrate and the barrier layer, the palladium catalyst modifies the terminal, adjacent to the barrier layer, of the monomolecular layer, and the barrier layer includes an electroless NiB plating layer which is disposed on the substrate side, and a electroless CoWP plating layer.
    Type: Grant
    Filed: September 29, 2006
    Date of Patent: June 16, 2009
    Assignee: Waseda University
    Inventors: Tetsuya Osaka, Masahiro Yoshino
  • Patent number: 7498520
    Abstract: A silica-based interlayer insulating layer having a low dielectric constant is formed with SOG material on a substrate, in which a wiring-layer forming space is then formed. If necessary, a UV ray irradiation is performed under an oxidizing atmosphere. A Si—OH bond is formed on a surface of the insulating layer. A monomolecular layer film is then adhered to the inner surface of the space, which is then modified to be a catalyst with a solution containing Pd compound. On the catalyst monomolecular layer, a copper-diffusion-resistant film is formed by electroless plating, on which a copper plate is then formed as a wiring layer.
    Type: Grant
    Filed: October 18, 2004
    Date of Patent: March 3, 2009
    Assignees: Waseda University, Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Tetsuya Osaka, Tokihiko Yokoshima, Isao Sato, Akira Hashimoto, Yoshio Hagiwara
  • Publication number: 20090029190
    Abstract: A process for producing a perpendicular magnetic recording medium comprises forming metallic nuclei or a seed layer on a non-magnetic substrate, and forming a soft magnetic under layer on the metallic nuclei or the seed layer by means of electroless plating. The soft magnetic under layer is formed while an external parallel magnetic field is applied to the non-magnetic substrate, and the substrate is rotated such that the substrate is maintained parallel to the parallel magnetic field.
    Type: Application
    Filed: September 29, 2008
    Publication date: January 29, 2009
    Applicants: Showa Denko K.K., Waseda University
    Inventors: Masahiro Ohmori, Hiroshi Ohta, Tetsuya Osaka, Toru Asahi, Tokihiko Yokoshima
  • Publication number: 20080102350
    Abstract: A cathode catalyst for a fuel cell is inexpensive and has high durability against methanol. A method of manufacturing and fixing the cathode catalyst, and a fuel cell including it, are disclosed. The cathode catalyst includes a compound selected from the group consisting of PdSn, PdAu, PdCo, PdWO3, and mixtures thereof. The present invention can provide a non-platinum-based cathode catalyst as a substitute for a platinum catalyst, the cathode catalyst having a low cost and improved catalyst activity, thereby contributing to popular use of a fuel cell. In addition, since the cathode catalyst of the present invention has high durability against methanol and can thereby be used with a fuel in a high concentration, it can increase the energy density of a direct methanol fuel cell (DMFC).
    Type: Application
    Filed: October 25, 2007
    Publication date: May 1, 2008
    Inventors: Tetsuya Osaka, Toshiyuki Momma, Jong-Eun Park
  • Publication number: 20080079154
    Abstract: The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier layer is interposed between the substrate and the copper layer, and the barrier layer is formed by electroless plating. And the laminated structure is characterized in that the barrier layer is formed on the substrate with a monomolecular layer of organosilane compound and a palladium catalyst which are interposed between the substrate and the barrier layer, the palladium catalyst modifies the terminal, adjacent to the barrier layer, of the monomolecular layer, and the barrier layer includes an electroless NiB plating layer which is disposed on the substrate side, and a electroless CoWP plating layer.
    Type: Application
    Filed: September 29, 2006
    Publication date: April 3, 2008
    Applicant: WASEDA UNIVERSITY
    Inventors: Tetsuya Osaka, Masahiro Yoshino
  • Publication number: 20080012049
    Abstract: A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode.
    Type: Application
    Filed: March 11, 2005
    Publication date: January 17, 2008
    Inventors: Daisuke Niwa, Tetsuya Osaka
  • Publication number: 20070207471
    Abstract: A semiconductor DNA sensing device having a detection section is provided. The detection section comprises a structure of a probe DNA/a first organic monolayer/an insulating layer/a semiconductor. The field-effect transistor (FET) comprises a semiconductor substrate and a first insulator layer formed thereon as a reactive gate insulator, and the first insulating layer comprises silicon oxide or an inorganic oxide. The first organic monolayer formed on the first insulator layer comprises an organic molecule having a reactive functional group. The probe DNA contains 3 to 35 nucleotides, and this probe DNA is bonded to the first organic monolayer by the reactive functional group either directly or by an intervening crosslinker.
    Type: Application
    Filed: September 5, 2006
    Publication date: September 6, 2007
    Applicant: WASEDA UNIVERSITY
    Inventors: Tetsuya Osaka, Daisuke Niwa, Norikazu Motohashi
  • Patent number: 7242553
    Abstract: When a soft magnetic layer for a double layer type perpendicular magnetic recording medium is formed by a plating method, there is the problem of the occurrence of an isolated pulse noise called spike noise so that signal reproduction characteristics are lost. In order to solve this problem, provided are a surface-treated substrate for a magnetic recording medium comprising a substrate having a diameter of not more than 90 mm, and a soft magnetic plating layer comprising an alloy of at least two metals selected from the group consisting of Co, Ni and Fe, which is provided above the substrate, wherein the soft magnetic layer has a coercivity of less than 20 oersted (Oe) in a direction that is parallel to a substrate surface, and wherein a ratio of saturation magnetization to residual magnetization in a direction that is parallel to a surface of the substrate is from 4:1 to 4:3; and a magnetic recording medium comprising the magnetic recording medium substrate.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: July 10, 2007
    Assignee: Shin-Etsu Chemical Co., Ltd.
    Inventors: Tetsuya Osaka, Toru Asahi, Tokihiko Yokoshima, Toshihiro Tsumori
  • Publication number: 20070139859
    Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.
    Type: Application
    Filed: December 29, 2006
    Publication date: June 21, 2007
    Inventors: Tetsuya Osaka, Ichiro Koiwa, Akira Hashimoto, Yoshimi Sato
  • Publication number: 20070095440
    Abstract: A gold-cobalt based amorphous alloy plated film consisting of a homogeneous amorphous phase not having microcrystals is formed by electroplating conducted by use of an electroplating bath containing a gold cyanide salt in a concentration of 0.01 to 0.1 mol/dm3 in terms of gold, a cobalt salt in a concentration of 0.02 to 0.2 mol/dm3 in terms of cobalt, and a tungstate in a concentration of 0.1 to 0.5 mol/dm3 in terms of tungsten. The gold-cobalt based amorphous alloy plated film obtained consists of a homogeneous amorphous phase not having microcrystals, and has an enhanced hardness while retaining the good contact resistance and chemical stability intrinsic of gold on such levels as to be free of problems on a practical use basis; therefore, the gold-cobalt based amorphous alloy plated film is effective for use as a contact material in electric and electronic component parts such as relays.
    Type: Application
    Filed: September 29, 2006
    Publication date: May 3, 2007
    Inventors: Kazutaka Senda, Masaru Kato, Tetsuya Osaka, Yutaka Okinaka
  • Patent number: 7196898
    Abstract: A capacitor capable of being incorporated into a packaging substrate, which capacitor includes a high-dielectric-constant layer, and an upper electrode layer and a lower electrode layer sandwiching the high-dielectric-constant layer from the upper side and the lower side. A packaging substrate containing the capacitor, and a method for producing the same are also provided.
    Type: Grant
    Filed: October 28, 2004
    Date of Patent: March 27, 2007
    Assignees: Waseda University, Oki Electric Industry Co., Ltd., Tokyo Ohka Kogyo Co., Ltd.
    Inventors: Tetsuya Osaka, Ichiro Koiwa, Akira Hashimoto, Yoshimi Sato
  • Publication number: 20070054174
    Abstract: A fuel cell includes a substrate having a pair of grooves, an electrolyte membrane lying on the substrate so as to define a pair of flow channels, and catalyst-bearing current collector layer sections disposed on the inner wall of the grooves or the inside surface of the electrolyte membrane defining the channels. A fuel liquid flows through the first channel to undergo anodic reaction, an oxidant liquid in the form of an aqueous hydrogen peroxide solution flows through the second channel to undergo cathodic reaction, and hydrogen ions traverse the electrolyte membrane.
    Type: Application
    Filed: September 6, 2006
    Publication date: March 8, 2007
    Inventors: Tetsuya Osaka, Toshiyuki Momma, Jong-Eun Park
  • Patent number: 7135103
    Abstract: A soft magnetic thin film of CoFe alloy having a high Br and low Hc is prepared by furnishing a plating tank including cathode and anode compartments which are separated by a diaphragm or salt bridge so as to permit charge transfer, but inhibit penetration of Fe ions, feeding a plating solution containing Co ions and divalent Fe ions to the cathode compartment, feeding an electrolyte solution to the anode compartment, immersing a substrate in the plating solution, immersing an anode in the electrolyte solution, electroplating, and heat treating the plated film at 100–550° C.; or by immersing a substrate and a soluble anode in a plating solution containing Co ions and divalent Fe ions, electroplating, and heat treating the plated film at 100–550° C.
    Type: Grant
    Filed: April 5, 2004
    Date of Patent: November 14, 2006
    Assignee: Waseda University
    Inventors: Tetsuya Osaka, Tokihiko Yokoshima
  • Patent number: 7029772
    Abstract: A magnetic recording medium that enables enhancement of squareness ratio and Hn and exhibits excellent noise characteristics and thermal stability is disclosed. A production process for the medium, and a magnetic recording and reproducing apparatus are also disclosed. The magnetic recording medium including a substrate 1, a carbon-containing carbon undercoat film 2 formed thereon, and a perpendicular magnetic film 3, in which most of easy-magnetization axes are oriented vertically with respect to the substrate, formed on the undercoat film. The perpendicular magnetic film is formed through a plurality of sputtering operations using at least one element selected from Pt and Pd and through a plurality of sputtering operations using a Co-containing material.
    Type: Grant
    Filed: September 10, 2001
    Date of Patent: April 18, 2006
    Assignee: Showa Denko Kabushiki Kaisha
    Inventors: Hiroshi Sakai, Tetsuya Osaka
  • Patent number: 6972157
    Abstract: A magnetic recording medium comprises a substrate, an undercoat layer, a magnetic layer, and a protective film. The undercoat layer and the magnetic layer are provided atop the substrate. The magnetic layer contains a noble metal layer containing Pt or Pd, a cobalt layer containing Co, and a non-magnetic material layer containing C or Si or Ge.
    Type: Grant
    Filed: March 26, 2003
    Date of Patent: December 6, 2005
    Assignees: Waseda University, Showa Denko Kabushiki Kaisha
    Inventors: Tetsuya Osaka, Hiroshi Sakai
  • Publication number: 20050249984
    Abstract: A perpendicular magnetic recording medium includes a non-magnetic substrate, and at least a soft magnetic under layer formed of a soft magnetic material, an alignment-regulating layer for regulating the crystal alignment of a layer provided directly thereon, a perpendicular magnetic layer in which easy-magnetization axes are oriented generally perpendicular to the substrate, and a protective layer, the layers and the layer being provided atop the substrate, wherein the soft magnetic under layer exhibits magnetic isotropy or has easy-magnetization axes oriented perpendicular to the substrate. According to the present invention, an undercoat layer having no magnetic domain walls can be formed. When the undercoat layer is employed, there can be provided a perpendicular magnetic recording medium and a perpendicular magnetic recording and reproducing apparatus which exhibit high thermal stability and excellent noise characteristics, and which attain high-density recording.
    Type: Application
    Filed: May 2, 2005
    Publication date: November 10, 2005
    Inventors: Masahiro Ohmori, Hiroshi Ohta, Tetsuya Osaka, Toru Asahi, Tokihiko Yokoshima