Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1<L3<L2.

Abstract: A plasma processing apparatus includes: a processing container; a stage provided in the processing container and configured to place a substrate on the stage; a gas introduction part provided in an upper portion of the processing container to face the stage and configured to introduce a processing gas into the processing container; and an annular exhaust path which is provided in an upper portion of a side wall of the processing container, and in which an opening toward a center of the processing container is formed at an inner circumferential side of the exhaust path, wherein the stage and the gas introduction part are respectively connected to high-frequency power supplies for generating plasma of the processing gas, wherein the exhaust path is grounded, wherein the plasma processing apparatus further comprises a grounded plasma distribution adjuster covering the opening, and wherein through-holes are formed in the plasma distribution adjuster.

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.

Abstract: [Object] A laminate is provided which can form packaging bags having a wide range of packaging feasible temperatures and excellent high-speed liquid packaging properties. [Solution] The laminate includes a sealant layer and an intermediate layer disposed in contact with the sealant layer, the sealant layer including an ethylene/?-olefin copolymer satisfying the requirements (x0) to (x3). (x0) The copolymer is a copolymer of ethylene and a C3-C20 ?-olefin. (x1) The MFR is 1 to 50 g/10 min. (x2) The density is 890 to 910 kg/m3. (x3) 0.35??H (80)/?H?0.85, and 0.60??H (100)/?H?0.85, wherein ?H is the total heat of melting observed during DSC, and ?H (T) is the heat of melting observed during heating from 0° C. to T° C.

Abstract: A plasma processing apparatus includes: a processing container; a stage provided in the processing container and configured to place a substrate on the stage; a gas introduction part provided in an upper portion of the processing container to face the stage and configured to introduce a processing gas into the processing container; and an annular exhaust path which is provided in an upper portion of a side wall of the processing container, and in which an opening toward a center of the processing container is formed at an inner circumferential side of the exhaust path, wherein the stage and the gas introduction part are respectively connected to high-frequency power supplies for generating plasma of the processing gas, wherein the exhaust path is grounded, wherein the plasma processing apparatus further comprises a grounded plasma distribution adjuster covering the opening, and wherein through-holes are formed in the plasma distribution adjuster.

Abstract: A substrate processing apparatus includes: a stage for performing at least one of heating and cooling on a substrate placed thereon and having a through-hole vertically penetrating the stage; a substrate support pin having an insertion portion inserted into the through-hole and configured so that the insertion portion protrudes from an upper surface of the stage through the through-hole; and a pin support member for supporting the substrate support pin. The substrate support pin has a flange portion located below a lower surface of the stage. The support member supports the substrate support pin by engagement with the flange portion. The through-hole is smaller than the flange portion. The substrate support pin includes a first member including the flange portion and a second member having the insertion portion. The first member has a sliding surface which slidably supports the second member.

Abstract: A stage on which a substrate is mounted, includes a stage body having an upper surface on which the substrate is mounted, a cover member configured to cover an outer edge portion of the upper surface of the stage body, and a positional deviation preventing member provided between the upper surface of the stage body and a lower surface of the cover member and configured to roll or slide. A body-side recess configured to accommodate the positional deviation preventing member is formed on the upper surface of the stage body. A cover-side recess configured to accommodate the positional deviation preventing member accommodated in the body-side recess is formed on the lower surface of the cover member. At least one of the body-side recess and the cover-side recess is formed in a bowl shape having an inclined surface extending along a radial direction of the stage body.

Abstract: A substrate processing apparatus for processing a substrate includes: a stage having a through-hole penetrating the stage in a vertical direction, the stage being configured to place the substrate on an upper surface of the stage and perform at least one of heating and cooling of the substrate placed on the upper surface; a lift pin configured to be inserted into the through-hole and capable of protruding from the upper surface of the stage through the through-hole; and a support member configured to be capable of supporting the lift pin, wherein the lift pin has a flange located below a lower surface of the stage, wherein the support member is further configured to support the lift pin by engaging with the flange, and wherein the through-hole in the stage is narrower than the flange of the lift pin.

Abstract: An apparatus includes: a processing container; a stage provided inside the processing container to place a substrate thereon; a gas supply mechanism for supplying a processing gas into the processing container; and at least three ultraviolet light sources provided to irradiate the processing gas inside the processing container with ultraviolet rays. The ultraviolet light sources are provided to be offset from a rotation axis of the stage in a plan view, and are arranged in a light source arrangement direction with distances from the ultraviolet light sources to the rotation axis being different from one another. The ultraviolet light sources include first to third ultraviolet light source. The third ultraviolet light source is arranged such that distances L1, L2, and L3 from the first to third ultraviolet light sources, respectively, to the rotation axis in a plan view satisfies a relationship of L1<L3<L2.

Abstract: A film-forming apparatus includes a processing container having a vacuum atmosphere therein, a stage having a heater and disposed in the processing container to load a substrate thereon, a gas discharge mechanism provided at a position to face the stage, and an exhaust part configured to exhaust an inside of the processing container. The gas discharge mechanism includes a gas intake port configured to introduce a processing gas into the processing container, a first plate-shaped member having a first opening formed in a more radially outward position than the gas intake port and a shower plate disposed between the first plate-shaped member and the stage to supply the processing gas from the first opening to a process space through a plurality of gas holes.

Abstract: A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.

Abstract: A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. A peripheral gas supply unit is disposed to surround the central gas ejecting unit. The peripheral gas supply unit includes a plurality of gas ejecting ports, which is formed in the circumferential direction such that the gases are spread in the horizontal direction toward the outer circumferential side and the central side of the substrate in a plan view.

Abstract: A film forming apparatus for performing a film forming process by sequentially supplying a plurality of reactant gases to a substrate and supplying a replacement gas includes a mounting table configured to mount thereon a substrate, and a shower head having a flat surface facing the mounting table and a plurality of gas supply opening. An annular protrusion is provided at the shower head to form a gap between the annular protrusion and a top surface of the mounting table. A plurality of gas supply units is provided at a ceiling portion at an upper side of the shower head. Each gas supply unit has gas discharge openings formed along a circumferential direction. The diffusion space is disposed such that an outer periphery of the diffusion space is located at an inner side of an outer periphery of the substrate mounted on the mounting table in a plan view.

Abstract: A film-forming apparatus forms a film by sequentially supplying a plurality of kinds of reaction gases to a substrate placed between a placing unit and a ceiling plate in a processing chamber having vacuum atmosphere and supplying a replacement gas between supply of one reaction gas and supply of next reaction gas. A central gas ejecting unit is disposed above the central portion of the substrate, and includes gas ejecting ports formed therein to spread the gases toward the outer side in the horizontal direction. A peripheral gas supply unit is disposed to surround the central gas ejecting unit. The peripheral gas supply unit includes a plurality of gas ejecting ports, which is formed in the circumferential direction such that the gases are spread in the horizontal direction toward the outer circumferential side and the central side of the substrate in a plan view.

Abstract: A film forming apparatus performs a film forming process by supplying a plurality of types of reactant gases that react with one another to a substrate in a processing chamber in a vacuum atmosphere. The apparatus includes: a ceiling part provided to face a mounting table and having an inclined surface that is wider gradually from a center toward a periphery; gas supply units provided at a central area of the ceiling part, each of the gas supply units having gas discharge openings formed around a circumferential direction thereof; and a shower head disposed to cover the gas supply units. The shower head has gas supply openings in a bottom portion thereof opposite to the mounting table. An outer periphery of the shower head is located inward of an outer periphery of the substrate mounted on the mounting table.

Abstract: A servo writer of the invention writes a servo signal in a magnetic tape, reads and inspects the signal, and has a servo writer main body and a plurality of unit panels changeably loaded to a panel change unit provided at the main body according to a product class of the tape, wherein any of the unit panels has a servo write head for writing the signal in the tape and a write-sub-control mechanism for controlling a writing of the signal by the write head, wherein the write head and the sub-control mechanism write a predetermined signal in the tape, and wherein the main body has a signal main control mechanism for mainly controlling a writing of the signal in the tape by the write head, a servo read head for reading the signal written in the tape, and a signal inspection mechanism for processing and inspecting the signal.

Abstract: A servo writer of the invention writes a servo signal in a magnetic tape, reads and inspects the signal, and has a servo writer main body and a plurality of unit panels changeably loaded to a panel change unit provided at the main body according to a product class of the tape, wherein any of the unit panels has a servo write head for writing the signal in the tape and a write-sub-control mechanism for controlling a writing of the signal by the write head, wherein the write head and the sub-control mechanism write a predetermined signal in the tape, and wherein the main body has a signal main control mechanism for mainly controlling a writing of the signal in the tape by the write head, a servo read head for reading the signal written in the tape, and a signal inspection mechanism for processing and inspecting the signal.