Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.

Abstract: A substrate processing method includes: supplying a first processing liquid containing a chelating agent and a solvent from a first tank toward a substrate having a film of a metal formed on a surface thereof to generate a complex containing the metal and the chelating agent while rotating the substrate; and supplying a second processing liquid containing water toward the substrate to dissolve the complex in the second processing liquid while rotating the substrate, after the complex is generated.

Abstract: A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

Abstract: A substrate processing apparatus includes a substrate holder, a processing liquid supply and a cover unit. The substrate holder holds a substrate horizontally and rotate the substrate. The processing liquid supply supplies a processing liquid toward a first surface of the substrate held by the substrate holder. The cover unit faces a second surface of the substrate, the second surface being opposite to the first surface. The cover unit includes a heater configured to heat the substrate. The cover unit is provided with an opening at a position corresponding to a central portion of the substrate and multiple gas supply openings, at an outer peripheral side than the opening, through which a gas is supplied toward the second surface of the substrate. The gas is heated by the heater. A supply amount of at least some of the gas is adjusted based on a rotation speed of the substrate.

Abstract: The present disclosure provides various embodiments of an improved wet atomic layer etching (ALE) process. More specifically, the present disclosure provides various embodiments of methods that improve a wet ALE process by providing a dynamic ALE cycle timing schedule that balances throughput and etch rate with post-etch surface roughness. As described in more detail below, the methods disclosed herein may adjust the purge timing between ALE cycles and/or between individual surface modification and selective dissolution steps to provide a desired throughput, etch rate and/or post-etch surface roughness in a wet ALE process.

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

Abstract: A substrate processing apparatus includes a substrate rotator that holds and rotates a substrate including a film of a metal formed on a surface thereof, a first supply that supplies a first processing liquid containing a chelating agent and a solvent toward the substrate, a second supply that supplies a second processing liquid containing water toward the substrate, and a controller that controls the substrate rotator, the first supply, and the second supply. While rotating the substrate by the substrate rotator, the controller supplies the first processing liquid toward the substrate by the first supply to generate a complex containing the metal and the chelating agent, and after the generation of the complex, supplies the second processing liquid toward the substrate by the second supply to dissolve the complex in the second processing liquid.

Abstract: A substrate processing method includes holding a substrate; and supplying an etching liquid to the substrate held in the holding of the substrate. The etching liquid contains an etching agent configured to etch a metal-based first material and a silicon-based second material exposed on the substrate and a protection agent configured to react with the second material between the first material and the second material to form a protection layer on a surface of the second material. Here, the etching agent is a liquid which contains fluorine atoms and an organic solvent and substantially does not contain water, and the protection layer protects the second material from etching with the etching agent.

Abstract: Disclosed is a liquid processing method capable of rapidly penetrating a liquid chemical into a concave portion formed on the surface of a substrate with the chemical liquid. The liquid processing method includes wetting the inside of the concave portion by supplying an organic solvent having surface tension smaller than the chemical liquid to the substrate, and cleaning the inside of the concave portion with the chemical liquid by supplying a cleaning liquid including the chemical liquid to the substrate and substituting the liquid inside the concave portion with the chemical liquid.

Abstract: Disclosed is a liquid processing method capable of rapidly penetrating a liquid chemical into a concave portion formed on the surface of a substrate with the chemical liquid. The liquid processing method includes wetting the inside of the concave portion by supplying an organic solvent having surface tension smaller than the chemical liquid to the substrate, and cleaning the inside of the concave portion with the chemical liquid by supplying a cleaning liquid including the chemical liquid to the substrate and substituting the liquid inside the concave portion with the chemical liquid.