Patents by Inventor Tetsuya Suemitsu

Tetsuya Suemitsu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 6144048
    Abstract: A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.
    Type: Grant
    Filed: December 23, 1999
    Date of Patent: November 7, 2000
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tetsuya Suemitsu, Takatomo Enoki
  • Patent number: 6090649
    Abstract: A Schottky barrier layer in separate regions between a source electrode and a gate electrode and between a drain electrode and the gate electrode is completely covered with an etching stopper layer. The gate electrode is separated from a cap layer.
    Type: Grant
    Filed: December 23, 1999
    Date of Patent: July 18, 2000
    Assignee: Nippon Telegraph and Telephone Corporation
    Inventors: Tetsuya Suemitsu, Takatomo Enoki