Patents by Inventor Tetsuya Taka

Tetsuya Taka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230258580
    Abstract: An imaging unit includes a housing having an entrance window that allows radiation transmitted through an object to pass through, a scintillator having an input surface to which radiation passing through the entrance window is input, and a line scan sensor having an imaging surface that captures an image of scintillation light output from the input surface. The imaging unit further includes a slit member placed between the entrance window and the scintillator and configured to guide radiation passing through the entrance window toward the input surface and a 1X lens placed between the scintillator and the line scan sensor and configured to form scintillation light output from the input surface into an image on the imaging surface of the line scan sensor.
    Type: Application
    Filed: August 10, 2021
    Publication date: August 17, 2023
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tetsuya TAKA, Toshiyasu SUYAMA
  • Publication number: 20210327929
    Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 ?m or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.
    Type: Application
    Filed: September 11, 2019
    Publication date: October 21, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Ryo TAKIGUCHI, Makoto KONO, Keiichi OTA, Tetsuya TAKA
  • Publication number: 20210067725
    Abstract: A linear image sensor includes N units, a readout circuit, and a control unit. Each unit includes a photodiode and a source follower amplifier. The source follower amplifier includes a MOS transistor, an operation control switch, and a current source. A gate of the MOS transistor is connected to a cathode of the photodiode via the MOS transistor. The operation control switch is provided between a source of the MOS transistor and a connection node. The current source is provided between the connection node and a second reference potential input terminal.
    Type: Application
    Filed: August 22, 2017
    Publication date: March 4, 2021
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventor: Tetsuya TAKA
  • Patent number: 8564704
    Abstract: A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.
    Type: Grant
    Filed: December 11, 2007
    Date of Patent: October 22, 2013
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Tetsuya Taka, Seiichiro Mizuno, Haruhiro Funakoshi
  • Patent number: 7989753
    Abstract: A photodetector of a wide dynamic range of incident light amount detection and low temperature dependence is provided. A first signal processing unit 10m,n includes an integrating circuit 11, a first holding circuit 12, a comparing circuit 13, a second holding circuit 14, and a latching circuit 15. The integrating circuit 11 has a variable capacitor unit that is selectively set to a capacitance value among a plurality of capacitance values, accumulates charges, output from the photodiode, into the variable capacitor unit over an accumulating period that is in accordance with the capacitance value set at the variable capacitor unit, and outputs a voltage V1 that is in accordance with the amount of the accumulated charges.
    Type: Grant
    Filed: March 17, 2005
    Date of Patent: August 2, 2011
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Seiichiro Mizuno, Haruhiro Funakoshi, Tetsuya Taka
  • Publication number: 20100295979
    Abstract: A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.
    Type: Application
    Filed: December 11, 2007
    Publication date: November 25, 2010
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Tetsuya Taka, Seiichiro Mizuno, Haruhiro Funakoshi
  • Publication number: 20090152446
    Abstract: A photodetector of a wide dynamic range of incident light amount detection and low temperature dependence is provided. A first signal processing unit 10m,n includes an integrating circuit 11, a first holding circuit 12, a comparing circuit 13, a second holding circuit 14, and a latching circuit 15. The integrating circuit 11 has a variable capacitor unit that is selectively set to a capacitance value among a plurality of capacitance values, accumulates charges, output from the photodiode, into the variable capacitor unit over an accumulating period that is in accordance with the capacitance value set at the variable capacitor unit, and outputs a voltage V1 that is in accordance with the amount of the accumulated charges. The comparing circuit 13 inputs the voltage V1 output from the integrating circuit 11, performs a quantitative comparison of the voltage V1 with a reference voltage Vref, outputs a compared signal S3 expressing the result of comparison, and, when the voltage V1 output from the integrating.
    Type: Application
    Filed: March 17, 2005
    Publication date: June 18, 2009
    Applicant: HAMAMATSU PHOTONICS K.K.
    Inventors: Seiichiro Mizuno, Haruhiro Funakoshi, Tetsuya Taka
  • Patent number: 7372489
    Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a drain terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.
    Type: Grant
    Filed: May 15, 2002
    Date of Patent: May 13, 2008
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Yukinobu Sugiyama, Seiichiro Mizuno, Tetsuya Taka, Takashi Suzuki
  • Publication number: 20060158542
    Abstract: A transmission transistor T2 transfers charges generated in a photodiode PD to a first capacitor part C11 via a first switch SW11, and transfers the charges to a second capacitor part C12 via a second switch SW12. An amplification transistor T1 outputs a voltage corresponding to the amount of accumulated charges in at least one of a first capacitor part C11 and a second capacitor part C12, connected to a gate terminal, and a gate terminal of the amplification transistor T1 is connected to at least one of the first capacitor part C11 and the second capacitor part C12.
    Type: Application
    Filed: December 2, 2005
    Publication date: July 20, 2006
    Inventors: Seiichiro Mizuno, Haruhiro Funakoshi, Tetsuya Taka
  • Patent number: 7075338
    Abstract: A light emitting element driving circuit for supplying driving current I2 to a light emitting element 10 connected to one line 2 of a current mirror circuit 12 is equipped with a pulse generating circuit 20 connected to the other line 1 so that pulse current flows therethrough, and superposing means 30 for superposing a first auxiliary pulse current on the pulse current in synchronization with the rise-up time of the pulse current. The rise-up time is shortened by the superposition. In the driving circuit, a source follower circuit is connected to the current mirror circuit, and current flowing through the source follower circuit is set to be substantially proportional to current flowing through the other line of the current mirror circuit.
    Type: Grant
    Filed: April 9, 2004
    Date of Patent: July 11, 2006
    Assignee: Hamamatsu Photonics K.K.
    Inventors: Seiichiro Mizuno, Takashi Suzuki, Tetsuya Taka
  • Publication number: 20040239788
    Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a source terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.
    Type: Application
    Filed: July 1, 2004
    Publication date: December 2, 2004
    Inventors: Yukinobu Sugiyama, Seiichiro Mizuno, Tetsuya Taka, Takashi Suzuki
  • Publication number: 20040195981
    Abstract: A light emitting element driving circuit for supplying driving current I2 to a light emitting element 10 connected to one line 2 of a current mirror circuit 12 is equipped with a pulse generating circuit 20 connected to the other line 1 so that pulse current flows therethrough, and superposing means 30 for superposing a first auxiliary pulse current on the pulse current in synchronization with the rise-up time of the pulse current. The rise-up time is shortened by the superposition. In the driving circuit, a source follower circuit is connected to the current mirror circuit, and current flowing through the source follower circuit is set to be substantially proportional to current flowing through the other line of the current mirror circuit.
    Type: Application
    Filed: April 9, 2004
    Publication date: October 7, 2004
    Applicant: Hamamatsu Photonics K.K.
    Inventors: Seiichiro Mizuno, Takashi Suzuki, Tetsuya Taka