Patents by Inventor Tetsuya Taka
Tetsuya Taka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230258580Abstract: An imaging unit includes a housing having an entrance window that allows radiation transmitted through an object to pass through, a scintillator having an input surface to which radiation passing through the entrance window is input, and a line scan sensor having an imaging surface that captures an image of scintillation light output from the input surface. The imaging unit further includes a slit member placed between the entrance window and the scintillator and configured to guide radiation passing through the entrance window toward the input surface and a 1X lens placed between the scintillator and the line scan sensor and configured to form scintillation light output from the input surface into an image on the imaging surface of the line scan sensor.Type: ApplicationFiled: August 10, 2021Publication date: August 17, 2023Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Tetsuya TAKA, Toshiyasu SUYAMA
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Publication number: 20210327929Abstract: A solid-state imaging device according to the disclosure includes a semiconductor substrate which has a main surface having a plurality of photosensitive regions, and an insulating film which is provided on the main surface of the semiconductor substrate. When the main surface of the semiconductor substrate is taken as a reference surface, a thickness of the insulating film from the reference surface is 0.5 ?m or more, a surface (a main surface) of the insulating film on the side opposite to the main surface is a surface having flatness, and a plurality of types of bottom surfaces of which depths from the reference surface are different from each other are provided on the main surface of the semiconductor substrate in the photosensitive regions.Type: ApplicationFiled: September 11, 2019Publication date: October 21, 2021Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Ryo TAKIGUCHI, Makoto KONO, Keiichi OTA, Tetsuya TAKA
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Publication number: 20210067725Abstract: A linear image sensor includes N units, a readout circuit, and a control unit. Each unit includes a photodiode and a source follower amplifier. The source follower amplifier includes a MOS transistor, an operation control switch, and a current source. A gate of the MOS transistor is connected to a cathode of the photodiode via the MOS transistor. The operation control switch is provided between a source of the MOS transistor and a connection node. The current source is provided between the connection node and a second reference potential input terminal.Type: ApplicationFiled: August 22, 2017Publication date: March 4, 2021Applicant: HAMAMATSU PHOTONICS K.K.Inventor: Tetsuya TAKA
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Patent number: 8564704Abstract: A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.Type: GrantFiled: December 11, 2007Date of Patent: October 22, 2013Assignee: Hamamatsu Photonics K.K.Inventors: Tetsuya Taka, Seiichiro Mizuno, Haruhiro Funakoshi
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Patent number: 7989753Abstract: A photodetector of a wide dynamic range of incident light amount detection and low temperature dependence is provided. A first signal processing unit 10m,n includes an integrating circuit 11, a first holding circuit 12, a comparing circuit 13, a second holding circuit 14, and a latching circuit 15. The integrating circuit 11 has a variable capacitor unit that is selectively set to a capacitance value among a plurality of capacitance values, accumulates charges, output from the photodiode, into the variable capacitor unit over an accumulating period that is in accordance with the capacitance value set at the variable capacitor unit, and outputs a voltage V1 that is in accordance with the amount of the accumulated charges.Type: GrantFiled: March 17, 2005Date of Patent: August 2, 2011Assignee: Hamamatsu Photonics K.K.Inventors: Seiichiro Mizuno, Haruhiro Funakoshi, Tetsuya Taka
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Publication number: 20100295979Abstract: A solid-state imaging device 1 includes photodiodes PD1 to PDN, charge-voltage converting circuits 101 to 10N, pre-holding circuits 201 to 20N, a transimpedance amplifier 30, a peak holding circuit 50, and a post-holding circuit 60. The charge-voltage converting circuit 10n inputs charges generated at the photodiode PDn and outputs a voltage value corresponding to the input charge quantity. The pre-holding circuit 20n holds the output voltage value from the charge-voltage converting circuit 10n and outputs the output voltage value as a current. The transimpedance amplifier 30 inputs voltage values successively output form the pre-holding circuits 201 to 20N as currents and outputs voltage values converted based on a transimpedance from the currents flowing in accordance with change quantities to the input voltage values from a reference voltage value. The peak holding circuit 50 holds and outputs a peak hold voltage of the output voltage values from the transimpedance amplifier 30.Type: ApplicationFiled: December 11, 2007Publication date: November 25, 2010Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Tetsuya Taka, Seiichiro Mizuno, Haruhiro Funakoshi
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Publication number: 20090152446Abstract: A photodetector of a wide dynamic range of incident light amount detection and low temperature dependence is provided. A first signal processing unit 10m,n includes an integrating circuit 11, a first holding circuit 12, a comparing circuit 13, a second holding circuit 14, and a latching circuit 15. The integrating circuit 11 has a variable capacitor unit that is selectively set to a capacitance value among a plurality of capacitance values, accumulates charges, output from the photodiode, into the variable capacitor unit over an accumulating period that is in accordance with the capacitance value set at the variable capacitor unit, and outputs a voltage V1 that is in accordance with the amount of the accumulated charges. The comparing circuit 13 inputs the voltage V1 output from the integrating circuit 11, performs a quantitative comparison of the voltage V1 with a reference voltage Vref, outputs a compared signal S3 expressing the result of comparison, and, when the voltage V1 output from the integrating.Type: ApplicationFiled: March 17, 2005Publication date: June 18, 2009Applicant: HAMAMATSU PHOTONICS K.K.Inventors: Seiichiro Mizuno, Haruhiro Funakoshi, Tetsuya Taka
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Patent number: 7372489Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a drain terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.Type: GrantFiled: May 15, 2002Date of Patent: May 13, 2008Assignee: Hamamatsu Photonics K.K.Inventors: Yukinobu Sugiyama, Seiichiro Mizuno, Tetsuya Taka, Takashi Suzuki
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Publication number: 20060158542Abstract: A transmission transistor T2 transfers charges generated in a photodiode PD to a first capacitor part C11 via a first switch SW11, and transfers the charges to a second capacitor part C12 via a second switch SW12. An amplification transistor T1 outputs a voltage corresponding to the amount of accumulated charges in at least one of a first capacitor part C11 and a second capacitor part C12, connected to a gate terminal, and a gate terminal of the amplification transistor T1 is connected to at least one of the first capacitor part C11 and the second capacitor part C12.Type: ApplicationFiled: December 2, 2005Publication date: July 20, 2006Inventors: Seiichiro Mizuno, Haruhiro Funakoshi, Tetsuya Taka
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Patent number: 7075338Abstract: A light emitting element driving circuit for supplying driving current I2 to a light emitting element 10 connected to one line 2 of a current mirror circuit 12 is equipped with a pulse generating circuit 20 connected to the other line 1 so that pulse current flows therethrough, and superposing means 30 for superposing a first auxiliary pulse current on the pulse current in synchronization with the rise-up time of the pulse current. The rise-up time is shortened by the superposition. In the driving circuit, a source follower circuit is connected to the current mirror circuit, and current flowing through the source follower circuit is set to be substantially proportional to current flowing through the other line of the current mirror circuit.Type: GrantFiled: April 9, 2004Date of Patent: July 11, 2006Assignee: Hamamatsu Photonics K.K.Inventors: Seiichiro Mizuno, Takashi Suzuki, Tetsuya Taka
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Publication number: 20040239788Abstract: A VI conversion circuit 40n inputs a voltage output from a hold circuit 30n, converts this input voltage to a current based on the resistance value of a resistor R40, and outputs this current from a source terminal of a MOS transistor T40. An amp A40 has an adequate open loop gain and MOS transistor T40 operates in the saturated region. Here, if the resistance value of resistor R40 is R, the current value I that is output from VI conversion circuit 40n is in the proportional relationship expressed by the equation, “I=V/R,” with respect to the voltage V input into VI conversion circuit 40n.Type: ApplicationFiled: July 1, 2004Publication date: December 2, 2004Inventors: Yukinobu Sugiyama, Seiichiro Mizuno, Tetsuya Taka, Takashi Suzuki
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Publication number: 20040195981Abstract: A light emitting element driving circuit for supplying driving current I2 to a light emitting element 10 connected to one line 2 of a current mirror circuit 12 is equipped with a pulse generating circuit 20 connected to the other line 1 so that pulse current flows therethrough, and superposing means 30 for superposing a first auxiliary pulse current on the pulse current in synchronization with the rise-up time of the pulse current. The rise-up time is shortened by the superposition. In the driving circuit, a source follower circuit is connected to the current mirror circuit, and current flowing through the source follower circuit is set to be substantially proportional to current flowing through the other line of the current mirror circuit.Type: ApplicationFiled: April 9, 2004Publication date: October 7, 2004Applicant: Hamamatsu Photonics K.K.Inventors: Seiichiro Mizuno, Takashi Suzuki, Tetsuya Taka