Abstract: A car includes a car equipment protection structure, The car equipment protection structure includes an underframe, couplers and guide members. Each of the guide members is provided on a railcar inner side of an attached flange portion of the underframe to which the couplers are attached. Moreover, the guide members respectively include inclined surfaces, each of which is opposed to at least a part of the coupler. Each of the inclined surfaces is inclined toward the railcar inner side as it extends downward.

Abstract: A car includes a car equipment protection structure, The car equipment protection structure includes an underframe, couplers and guide members. Each of the guide members is provided on a railcar inner side of an attached flange portion of the underframe to which the couplers are attached. Moreover, the guide members respectively include inclined surfaces, each of which is opposed to at least a part of the coupler. Each of the inclined surfaces is inclined toward the railcar inner side as it extends downward.

Abstract: A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

Abstract: Disclosed is fluorocarbon-based dry etching gas which is free of global environmental problems and a dry etching method using a plasma gas obtained therefrom. The dry etching gas includes a fluorinated ether of carbon, fluorine, hydrogen and oxygen and having 2-6 carbon atoms.

Abstract: A substrate to be etched is subjected to dry etching by using a dry etching gas containing a perfluorocycloolefin while a plasma with a high density region of at least 1010/cm3 is generated. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms are preferably used.

Abstract: A substrate processing apparatus includes a processing chamber and a gas supply line, wherein a natural oxide film removing gas including a first gas activated by a second gas activated by a plasma discharge is supplied to the processing chamber through the gas supply line to remove a natural oxide film on a wafer, and wherein the first gas and the second gas are supplied to the gas supply line along a first direction and a second direction and an angle between the first and the second direction ranges from about 90° to 180°.

Abstract: A gaseous composition for dry etching, comprising a perfluorocycloolefin and 1 to 40% by mole, based on the perfluorocycloolefin, of at least one oxygen ingredient selected from oxygen gas and oxygen-containing gaseous compounds. As the perfluorocycloolefin, those having 3 to 8 carbon atoms, especially 4 to 6 carbon atoms, are preferably used.

Abstract: An apparatus for containing semiconductor wafers and performing heat treatment thereon. Heaters disposed in a high temperature furnace form at least one heating space therein. An insertion and retrieval aperture is disposed at the lower portion of each heating space for allowing passage of wafers therethrough. Each of the heating spaces is adapted to receive one or two wafers and to provide simultaneous and uniform heat treatment on the wafers.

Abstract: The semiconductor device manufacturing process for producing semiconductors (transistor, IC, LSI or the like) needs a large number of thermal treatments for semiconductor wafers, such as thermal oxidation, diffusion, CVD, annealing or the like. The above-mentioned various thermal treatments are conducted by employing thermal treatment apparatus. The thermal treatment apparatus according to the present invention performs thermal treatments for semiconductor wafers, such as thermal oxidation, diffusion, CVD, annealing or the like, and has a soft landing loader capable of loading and unloading a wafer jig housing therein a plurality of semiconductor wafers into and from a process tube of the thermal treatment apparatus with high reliability and a high thermal efficiency as well as capable of automatic control of the movement of the semiconductor wafers in accordance with thermal treatment conditions.

Abstract: A surface treatment device capable of carrying out the surface treatment such as washing or etching of plate-like articles such as semiconductor wafers maintaining high degree of reliability, wherein a surface treating liquid is introduced into a ring-like or a conduit-like treating vessel. The plate-like articles to be treated are moved by a conveyor on a conveyor path having a surface in parallel with the surfaces of the plate-like articles against the stream of the treating liquid in a piece-by-piece manner, so that the surfaces of the plate-like articles are treated, whereby the surfaces of the semiconductor wafers can be desirably treated prior to manufacturing the semiconductor products.