Patents by Inventor Tetsuya Takami
Tetsuya Takami has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7829898Abstract: In a MOSFET using SiC a p-type channel is formed by epitaxial growth, so that the depletion layer produced in the p-type region right under the channel is reduced, even when the device is formed in a self-aligned manner. Thus, a high breakdown voltage is obtained. Also, since the device is formed in a self-aligned manner, the device size can be reduced so that an increased number of devices can be fabricated in a certain area and the on-state resistance can be reduced.Type: GrantFiled: February 14, 2006Date of Patent: November 9, 2010Assignee: Mitsubishi Electric CorporationInventors: Kenichi Ootsuka, Tetsuya Takami, Tadaharu Minato
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Publication number: 20090020834Abstract: In a MOSFET using SiC a p-type channel is formed by epitaxial growth, so that the depletion layer produced in the p-type region right under the channel is reduced, even when the device is formed in a self-aligned manner. Thus, a high breakdown voltage is obtained. Also, since the device is formed in a self-aligned manner, the device size can be reduced so that an increased number of devices can be fabricated in a certain area and the on-state resistance can be reduced.Type: ApplicationFiled: February 14, 2006Publication date: January 22, 2009Applicant: MITSUBISHI ELECTRIC CORPORATIONInventors: Kenichi Ootsuka, Tetsuya Takami, Tadaharu Minato
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Patent number: 7285465Abstract: A semiconductor device and its manufacturing method are provided in which the trade-off relation between channel resistance and JFET resistance, an obstacle to device miniaturization, is improved and the same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET that uses SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.Type: GrantFiled: February 15, 2006Date of Patent: October 23, 2007Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yoichiro Tarui, Ken-ichi Ohtsuka, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami
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Publication number: 20060134847Abstract: A semiconductor device and its manufacturing method are provided in which the trade-off relation between channel resistance and JFET resistance, an obstacle to device miniaturization, is improved and the same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET that uses SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.Type: ApplicationFiled: February 15, 2006Publication date: June 22, 2006Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Yoichiro Tarui, Ken-ichi Ohtsuka, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami
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Patent number: 7029969Abstract: A semiconductor device and its manufacturing method in which the trade-off relationship between channel resistance and JFET resistance is improved. The same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET including SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.Type: GrantFiled: March 18, 2004Date of Patent: April 18, 2006Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Yoichiro Tarui, Ken-ichi Ohtsuka, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami
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Publication number: 20040188755Abstract: A semiconductor device and its manufacturing method in which the trade-off relationship between channel resistance and JFET resistance is improved. The same mask is used to form a source region and a base region by ion implantation. In a vertical MOSFET including SiC, a source region and a base region are formed by ion implantation using the same tapered mask to give the base region a tapered shape. The taper angle of the tapered mask is set to 30° to 60° when the material of the tapered mask has the same range as SiC in ion implantation, and to 20° to 45° when the material of the tapered mask is SiO2.Type: ApplicationFiled: March 18, 2004Publication date: September 30, 2004Applicant: Mitsubishi Denki Kabushiki KaishaInventors: Yoichiro Tarui, Ken-ichi Ohtsuka, Masayuki Imaizumi, Hiroshi Sugimoto, Tetsuya Takami
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Patent number: 6110291Abstract: A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.Type: GrantFiled: August 7, 1996Date of Patent: August 29, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kenyu Haruta, Koichi Ono, Hitoshi Wakata, Mutsumi Tsuda, Yoshio Saito, Keisuke Nanba, Kazuyoshi Kojima, Tetsuya Takami, Akihiro Suzuki, Tomohiro Sasagawa, Kenichi Kuroda, Toshiyuki Oishi, Yukihiko Wada, Akihiko Furukawa, Yasuji Matsui, Akimasa Yuki, Takaaki Kawahara, Hideki Yabe, Taisuke Furukawa, Kouji Kise, Noboru Mikami, Tsuyoshi Horikawa, Tetsuo Makita, Kazuo Kuramoto, Naohiko Fujino, Hiroshi Kuroki, Tetsuo Ogama, Junji Tanimura
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Patent number: 6033741Abstract: A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.Type: GrantFiled: August 7, 1996Date of Patent: March 7, 2000Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kenyu Haruta, Koichi Ono, Hitoshi Wakata, Yoshio Saito, Kazuyoshi Kojima, Tetsuya Takami, Akihiro Suzuki, Yukihiko Wada
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Patent number: 5622567Abstract: A thin film forming apparatus using laser includes a chamber (1), a target (5) placed therein, a laser light source (10) for emitting laser beam to target (5), and a substrate holder (3). When target (5) is irradiated with laser beam (16), a plume (15) is generated, and materials included in plume (15) are deposited on the surface of a substrate (2) held by substrate holder (3). The laser beam emitted from laser light source (10) has its cross section shaped to a desired shape when passed through a shielding plate (4804), for example, so that the surface of the target (5) is irradiated with the beam having uniform light intensity distribution. Therefore, a plume (15) having uniform density distribution of active particles is generated, and therefore a thin film of high quality can be formed over a wide area with uniform film quality, without damaging the substrate.Type: GrantFiled: November 29, 1993Date of Patent: April 22, 1997Assignee: Mitsubishi Denki Kabushiki KaishaInventors: Kazuyoshi Kojima, Tetsuya Takami, Kenichi Kuroda, Toshiyuki Oishi, Yukihiko Wada, Akihiko Furukawa