Abstract: An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

Abstract: An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

Abstract: An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

Abstract: In a semiconductor device which is formed by connecting electrodes of a package substrate composed of a resin and electrodes of a semiconductor chip formed of a silicon semiconductor, an underfill resin having the Young's modulus of less than 100 kgf/mm2 is filled in the gap of the junction between the semiconductor chip and the package substrate.

Abstract: An oxide film formed on the surface of copper film of an electrode pad is cleaned by oxalic acid after unevenness is formed on the surface of copper film by treating the surface with organic acid. Thereby, stable resistance is obtained when carrying out a characteristic inspection by bringing a probe into contact with the electrode pad, and it is easily recognized by observation through a microscope that the probe is brought into contact with the electrode pad. In addition, wettability with respect to solder is satisfactory, and it is possible to favorably form a solder bump on the electrode pad.

Abstract: In a semiconductor device which is formed by connecting electrodes of a package substrate composed of a resin and electrodes of a semiconductor chip formed of a silicon semiconductor, an underfill resin having the Young's modulus of less than 100 kgf/mm2 is filled in the gap of the junction between the semiconductor chip and the package substrate.

Abstract: A bump formation plate is provided with a base and solder bumps formed on the base. The top portion of the solder bump inclines from the center thereof to the periphery thereof. A contact surface of the solder bump with the base may be flat. The base is made of, for example, aluminum or stainless steel.

Abstract: A bump formation plate is provided with a base and solder bumps formed on the base. The top portion of the solder bump inclines from the center thereof to the periphery thereof. A contact surface of the solder bump with the base may be flat. The base is made of, for example, aluminum or stainless steel.

Abstract: A bump formation plate is provided with a base and solder bumps formed on the base. The top portion of the solder bump inclines from the center thereof to the periphery thereof. A contact surface of the solder bump with the base may be flat. The base is made of, for example, aluminum or stainless steel.

Abstract: A bump formation plate is provided with a base and solder bumps formed on the base. The top portion of the solder bump inclines from the center thereof to the periphery thereof. A contact surface of the solder bump with the base may be flat. The base is made of, for example, aluminum or stainless steel.

Abstract: A packaged semiconductor device having high reliability that allows for a large number of pins and that provides good heat removal properties, and that can discharge the high pressure moisture in a gas state from the inside thereof to the exterior. The device includes a strengthening ring arranged around a semiconductor chip that includes a process type electrode and that is mounted on an isolated substrate; a resin to fill spaces between the semiconductor chip and the isolated substrate; and a cap on the semiconductor chip and the strengthening ring, wherein at least one vent is formed perpendicular to the direction of the thickness of the semiconductor chip.

Abstract: A packaged semiconductor device having high reliability which can solve the problems that many pins are to be loaded, that is, that the density of the electrical wirings becomes high, and the heat loss properties thereof decrease, and which can discharge the high pressure moisture in a gas state from the inside thereof to the exterior, comprising: a strengthening ring arranged around a semiconductor chip comprising a process type electrode on an isolated substrate; a resin to fill spaces between the semiconductor chip and the isolated substrate; and a cap on the semiconductor chip and the strengthening ring, wherein at least one vent is formed perpendicular to the direction of the thickness of the semiconductor chip.