Abstract: In an etching method for an oxide semiconductor film according to an embodiment of the present disclosure, a modified layer is formed in the oxide semiconductor film by using a first rare gas and the modified layer is sputtered by using a second rare gas different from the first rare gas.

Abstract: A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber.

Abstract: Etching characteristics in a case where a workpiece contains a nitrogen compound and an etching gas such as a CHxFy-based gas contains hydrogen are obtained. In a flux calculation step, an information processing apparatus calculates a plurality of fluxes in a surface reaction model, a processed surface of a workpiece including a protection film layer and a reaction layer in the surface reaction model. In a protection film layer calculation step, the information processing apparatus calculates a thickness of the protection film layer by using a calculation equation for calculating a thickness of an etched protection film layer based on the basis of a removal term for describing removal of the protection film layer, the removal term being selected depending on a comparison result of comparing the plurality of fluxes.

Abstract: Etching characteristics in the case where a workpiece contains a nitrogen compound and an etching gas such as a CHxFy-based gas contains hydrogen are obtained. In a flux calculation step, an information processing apparatus calculates a plurality of fluxes in a surface reaction model, a processed surface of a workpiece including a protection film layer and a reaction layer in the surface reaction model. In a protection film layer calculation step, the information processing apparatus calculates a thickness of the protection film layer by using a calculation equation for calculating a thickness of the etched protection film layer on the basis of a removal term for describing removal of the protection film layer, the removal term being selected depending on a result of comparing the plurality of fluxes.

Abstract: Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance.

Abstract: The simulation method is for predicting a damage amount due to ultraviolet rays in manufacturing a semiconductor device.

Abstract: Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed.

Abstract: A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

Abstract: Disclosed herein is a semiconductor manufacturing device including, a chamber, a sensor, a sticking probability calculating section, an acting section, and a control section.

Abstract: Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed.

Abstract: Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed.

Abstract: Disclosed herein is a simulator including: an input section adapted to acquire processing conditions for a given process performed on a workpiece; and a damage calculation section adapted to acquire the damage of the workpiece, based on the processing conditions, by calculating, using a Flux method, the relationship between the amount of a first substance externally injected onto a given evaluation point on the workpiece during the given process and the amount of a second substance released from the given evaluation point on the workpiece as a result of the injection of the first substance.

Abstract: Disclosed herein is a semiconductor manufacturing device including, a chamber, a sensor, a sticking probability calculating section, an acting section, and a control section.

Abstract: Disclosed herein is a shape simulation apparatus including: a flux computation block configured to compute the flux of particles incident on the surface of a wafer covered with a mask; and a shape computation block configured to compute a surface shape of the wafer by allowing the coordinates of a plurality of calculation points established on the surface of the wafer to be time-evolved based on the incident flux computed.

Abstract: Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

Abstract: A fabrication method of an anti-reflection structure includes the steps of: forming a resin film having micro-particles dispersed therein on a surface of a substrate; forming a protrusion dummy pattern on the resin film by etching the resin film using the micro-particles in the resin film as a mask while gradually etching the micro-particles; and forming a protrusion pattern on the surface of the substrate by etching back the surface of the substrate together with the resin film having the protrusion dummy pattern formed thereon, and transferring a surface shape of the protrusion dummy pattern formed on a surface of the resin film to the surface of the substrate.

Abstract: A dry etching equipment includes a topography simulator and a control section. The topography simulator controls an amount of deposition species incident upon a sidewall to be processed in accordance with a wafer opening ratio and a solid angle of a local pattern, the deposition amount being represented by a product of a reaction product flux and the solid angle. The control section compares a database obtained by the topography simulator with an actual measured value detected from an etching condition during dry etching to calculate a correction value for etching process, and indicates the correction value to an etching chamber in the dry etching equipment. The dry etching equipment corrects in real time a parameter for the etching process conducted in the etching chamber.

Abstract: Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

Abstract: Provision of a process capable of preferably etching particularly PtMn used for a pin layer of an MRAM is an object: a dry etching method for performing dry etching on a layer including platinum and/or manganese by using pulse plasma and a production method of an MRAM, wherein the dry etching method is applied to processing of the pin layer. The MRAM is configured to have a memory portion comprising a magnetic memory element composed of tunnel magnetoresistive effect element formed by stacking a magnetic fixed layer having a fixed magnetization direction, a tunnel barrier layer and a magnetic layer capable of changing the magnetization direction.

Abstract: Disclosed is a plasma monitoring method for detecting the amount of atomic radicals generated by dissociation of a molecular raw material gas during a plasma processing conducted by introducing the molecular raw material gas and a rare gas into a process atmosphere, wherein the amount of the atomic radicals is predicted from the dissociation degree of the molecular raw material gas determined from the partial pressure of the molecular raw material gas in the process atmosphere, the luminous intensity of the rare gas, and the partial pressure of the rare gas in the process atmosphere, whereby the amount of the specific atomic radicals can be monitored easily and accurately.