Abstract: A substrate transfer hand coupled to a robot arm includes a base part coupled to the robot arm; and a substrate holding part coupled to the base part to hold a substrate. When viewed in a substrate perpendicular line direction perpendicular to the substrate held by the substrate holding part, the substrate transfer hand is bent at a coupling portion at which the base part and the substrate holding part are coupled to each other or a region which is in the vicinity of the coupling portion, and the base part and the substrate transfer hand have a V-shape, as a whole.

Abstract: To provide a semiconductor device having improved reliability. An element isolation region comprised mainly of silicon oxide is buried in a trench formed in a semiconductor substrate. The semiconductor substrate in an active region. surrounded by the element isolation region has thereon a gate electrode for MISFET via a gate insulating film. The gate electrode partially extends over the element isolation legion and the trench has a nitrided inner surface. Below the gate electrode, fluorine is introduced into the vicinity of a boundary between the element isolation region and a channel region of MISFET.

Abstract: To make a gate insulating film of a selecting transistor coupled in series to a MONOS memory transistor thinner and to ensure insulation resistance of the gate insulating film, the selecting transistor and the memory transistor, which constitute a memory cell, are formed on an SOI substrate, and an extension region of the selecting transistor is formed to be away from a selecting gate electrode in a plan view. A drain region of the selecting transistor and a source region of the memory transistor share the same semiconductor region with each other.

Abstract: The method for producing an electrode includes the steps of dissolving a soluble salt of nickel, a soluble salt of iron, and aminocarboxylic acid in water to prepare a plating solution, and immersing a substrate in the plating solution to form a plating on the substrate by electroplating. In the step of forming of the plating, the pH of the plating solution is more than 2.0.

Abstract: In general, according to one embodiment, an ultrasonic diagnostic apparatus is used to observe a position and puncture direction of a puncture needle in an object in a paracentesis, and comprises data acquisition unit, image generation unit and a display. The data acquisition unit acquires a plurality of first ultrasound data concerning an inside of the object, acquire a plurality of second ultrasound data concerning the inside of the object, and acquire a plurality of third ultrasound data concerning the inside of the object. The image generation unit generates a tissue image displaying a living body tissue by using the first ultrasound data, generate a puncture image displaying the puncture needle based on image processing using the second ultrasound data and the third ultrasound data, and generate a composite image visualizing the living body tissue and the puncture needle by using the tissue image and the puncture image.

Abstract: The invention provides an ultrasonic diagnostic apparatus that scans an object to be examined into which contrast medium bubbles are injected with ultrasonic waves to acquire an ultrasonic image of the object.

Abstract: To provide a semiconductor device having improved reliability. The semiconductor device has, on a SOI substrate thereof having a semiconductor substrate, an insulating layer, and a semiconductor layer, a gate insulating film having an insulating film and a high dielectric constant film. The high dielectric constant film has a higher dielectric constant than a silicon oxide film and includes a first metal and a second metal. In the high dielectric constant film, the ratio of the number of atoms of the first metal to the total number of atoms of the first metal and the second metal is equal to or more than 75%, and less than 100%.

Abstract: A robot diagnosing method includes: preparing: (1) a line sensor including a light emitter configured to emit a light ray, a light receiver configured to receive the light ray emitted from the light emitter, and a detecting portion configured to detect a position of the detected portion based on a light receiving state of the light receiver, the detected portion being inserted between the light emitter and the light receiver, and (2) a robot including a robot arm and a detected portion configured to move integrally with a wrist portion of the robot arm; detecting the position of the detected portion by the line sensor while linearly moving the wrist portion based on a command value from the robot control portion such that the wrist portion intersects with the light ray; and diagnosing a linearly moving property of the wrist portion based on the position of the detected portion.

Abstract: The present invention provides a pharmaceutical composition for cancer treatment comprising an antibody against CCR8.

Abstract: A robot diagnosing method detects a deviation amount caused by a lost motion and includes: a first step of preparing a robot including a robot arm having at least one joint portion, a work conveyed by the robot, and a prealigner including a processing portion configured to detect a center position of the work; and after the first to fifth steps, a sixth step of detecting the deviation amount caused by the lost motion at the one joint portion based on (i) the center position of the work based on the center position of the work detected in the second step and a command value from a robot control portion in the fourth step and (ii) the center position of the work detected in the fifth step.

Abstract: A substrate holding hand is provided, which holds a disc-shaped substrate and includes a base plate, and guide members, each provided to the base plate, formed in an L-shape, and formed so that an inner wall surface thereof is bent when seen horizontally. The inner wall surface of the guide member is formed so that an angle between a first inner wall part that is the furthest portion of the inner wall surface from a bottom surface of the inner wall surface and the bottom surface is larger than an angle between a second inner wall part that is the nearest portion of the inner wall surface to the bottom surface and the bottom surface.

Abstract: When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.

Abstract: To make a gate insulating film of a selecting transistor coupled in series to a MONOS memory transistor thinner and to ensure insulation resistance of the gate insulating film, the selecting transistor and the memory transistor, which constitute a memory cell, are formed on an SOI substrate, and an extension region of the selecting transistor is formed to be away from a selecting gate electrode in a plan view. A drain region of the selecting transistor and a source region of the memory transistor share the same semiconductor region with each other.

Abstract: A barrel-type multistage pump with uniformed velocity distribution in an axial direction, on a cross-section of a rotating flow channel, to suppress fluid loss in a last stage, and including: plural stages of centrifugal impellers, covered by an inner casing; diffusers and return channels provided on downstream sides of the centrifugal impellers, to guide the flow of a fluid to a centrifugal impeller in the next stage, and return vanes arranged at respective return channels; a cylindrical outer casing having a suction pipe and a discharge pipe, wherein a cylindrical rotating flow channel connected to a discharge opening is provided between an outer casing and an inner casing, a connecting channel to connect between a rotating flow channel and diffusers.

Abstract: To provide a charge control agent and a toner having a superior charging characteristic. A charge control agent containing a bis-phthalimide derivative represented by formula. Thus, it is possible to provide a safe, negative chargeability charge control agent with which the rate of rise of the charge can be increased, and which has a high charging amount and poses no problem in terms of waste regulations. Furthermore, it is possible to provide a negatively chargeable toner (and particularly, a negatively chargeable polymerized toner) for electrostatic image development which uses this charging control agent and has a superior charging characteristic.

Abstract: In a process of implanting ions of an n-type impurity for threshold control into a semiconductor substrate surrounded by an element isolation portion, a resist pattern is formed such that the resist pattern covers a divot formed at a boundary portion of the element isolation portion with an SOI layer. Thus, since ions of the n-type impurity are not implanted into the divot, an etching rate of the divot in a cleaning process or the like is not accelerated, and etching can be suppressed. As a result, a BOX layer is prevented from becoming thin, so that degradation of a TDDB characteristic of the BOX layer can be prevented.

Abstract: When VC inspection for a TEG is performed, it is easily detected whether any failure of a contact plug occurs or not by increasing an emission intensity of a contact plug, so that reliability of a semiconductor device is improved. An element structure of an SRAM is formed on an SOI substrate in a chip region. Also, in a TEG region, an element structure of an SRAM in which a contact plug is connected to a semiconductor substrate is formed on the semiconductor substrate exposed from an SOI layer and a BOX film as a TEG used for the VC inspection.

Abstract: In an ultrasound probe according to an embodiment, a first ultrasound transducer array scans a first scanned plane. A second ultrasound transducer array engages with the first ultrasound transducer array, is provided so as to intersect the first ultrasound transducer array, and scans a second scanned plane different from the first scanned plane. A probe main body is provided with the first ultrasound transducer array and the second ultrasound transducer array, has an opening in a position where the first and the second ultrasound transducer arrays intersect each other, and has a through hole extending to the opening. An engaging part that causes the first and the second ultrasound transducer arrays to engage with each other is configured in such a manner that the angle at which the first and the second ultrasound transducer arrays intersect each other is changeable.

Abstract: An ultrasound apparatus according to the present embodiments includes a receiving unit and a probe controlling unit. The receiving unit receives settings in relation to the aperture of the ultrasound probe and the region of interest of the subject with a contrast agent injected. The probe controlling unit controls the ultrasound probe based on the settings received by the receiving unit in such a manner as to transmit an ultrasound wave from the vibrator arranged in the aperture to the region of interest.

Abstract: Leakage of a working fluid from a shaft sealing device of a turbomachine which handles a liquid as the working liquid is reduced and also unstable fluid force which acts on a rotor is reduced. For this purpose, the turbomachine has a rotor having an impeller, a bearing which rotatably supports the rotor, a casing which contains the rotor therein and forms a stationary flow passage, and the shaft sealing device which reduces the leakage of the working fluid through a gap part between the casing and the rotor. The working fluid is a liquid. A plurality of axial grooves which are intermittently arranged in axial direction and circumferential direction of the rotor with a land part being interposed are provided in an inner circumferential surface of the shaft sealing device.