Patents by Inventor Tetsuya Yoshikawa
Tetsuya Yoshikawa has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20110000292Abstract: Provided is a tire testing machine capable of measuring a force generated in a tire with high precision. The tire testing machine includes a spindle shaft (20) for holding a tire (T), a housing (22) for rotatably supporting the spindle shaft (20) through a rolling bearing (25), a running device (10) having a surface rotated by rotational driving and imparting a rotational force to a tire contacting the surface, and a measurement device (4) which is provided in the housing (22) and measures a force and moment generated in the spindle shaft (20) when the tire (T) is running. Furthermore, the tire testing machine includes a torque canceller (5) for preventing the spindle shaft (20) from such an impact that rotational friction torque (My1) generated by rotational friction, which is received by the spindle shaft (20) in the housing when the spindle shaft (20) rotates, is imparted onto the shaft (20).Type: ApplicationFiled: February 24, 2009Publication date: January 6, 2011Applicant: KABUSHIKI KAISHA KOBE SEIKO SHO (KOBE STEEL, LTD.)Inventors: Tetsuya Yoshikawa, Yasuhiko Fujieda
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Publication number: 20090308156Abstract: A tire testing machine according to the present invention, which can measure both uniformity and dynamic balance of a tire T, comprises a spindle for driving the tire T to rotate about a vertical axis, a spindle housing which supports the spindle rotatably, and a rotating drum rotatable about an axis parallel to an axis of the spindle and movable toward and away from the tire T. The spindle housing is fixed to a base through a piezoelectric sensor so that it can bear a pressing force provided from the rotating drum. The piezoelectric sensor is disposed within a plane including the axis of the spindle and perpendicular to the pressing force. With this structure, dynamic balance of the tire can be measured accurately and easily.Type: ApplicationFiled: April 30, 2009Publication date: December 17, 2009Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Yu Sumimoto, Koichi Honke, Masao Murakami, Tetsuya Yoshikawa, Toshikatsu Nonaka
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Patent number: 7520938Abstract: An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.Type: GrantFiled: August 11, 2004Date of Patent: April 21, 2009Assignee: Kobe Steel, Ltd.Inventors: Yoshihiko Sakashita, Takahiko Ishii, Masahiro Yamagata, Tetsuya Yoshikawa
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Patent number: 7513265Abstract: Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.Type: GrantFiled: October 21, 2003Date of Patent: April 7, 2009Assignees: Kabushiki Kaisha Kobe Seiko Sho, Dainippon Screen Mfg. Co., Ltd.Inventors: Tetsuya Yoshikawa, Yoichi Inoue, Katsumi Watanabe, Kaoru Masuda, Katsuyuki Iijima, Tomomi Iwata, Yusuke Muraoka, Kimitsugu Saito, Ikuo Mizobata
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Patent number: 7335596Abstract: Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of ?20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.Type: GrantFiled: June 22, 2005Date of Patent: February 26, 2008Assignee: Kobe Steel, Ltd.Inventors: Takashi Onishi, Tatsuya Yasunaga, Hideo Fujii, Tetsuya Yoshikawa, Jun Munemasa
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Patent number: 7220714Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including carbon dioxide, an additive for removing the residues and a co-solvent dissolving the additive in said carbon dioxide at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. A composition for removing residues from the microstructure of an object is also provided.Type: GrantFiled: April 13, 2004Date of Patent: May 22, 2007Assignee: Air Products and Chemicals, Inc.Inventors: Kaoru Masuda, Katsuyuki Iijima, Tetsuya Yoshikawa, Darry W. Peters
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Publication number: 20060019496Abstract: Cu-based interconnections are fabricated in a semiconductor device by depositing a thin film of Cu or Cu alloy on a dielectric film by sputtering, the dielectric film having trenches and/or via holes at least one groove and being arranged on or above a substrate, and carrying out high temperature and high pressure treatment to thereby embed the Cu or Cu alloy into the trenches and/or via holes, in which the sputtering is carried out at a substrate temperature of ?20° C. to 0° C. using, as a sputtering gas, a gaseous mixture containing hydrogen gas and an inert gas in a ratio in percentage of 5:95 to 20:80.Type: ApplicationFiled: June 22, 2005Publication date: January 26, 2006Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel,Ltd.)Inventors: Takashi Onishi, Tatsuya Yasunaga, Hideo Fujii, Tetsuya Yoshikawa, Jun Munemasa
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Patent number: 6916735Abstract: A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.Type: GrantFiled: September 30, 2002Date of Patent: July 12, 2005Assignee: Kabushiki Kaisha Kobe Seiko ShoInventors: Takao Fujikawa, Tetsuya Yoshikawa
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Publication number: 20050051194Abstract: An object is subjected to high-pressure processing by bringing at least a high-pressure fluid into contact with the object under pressure in a high-pressure processing chamber, and then the high-pressure processing chamber is depressurized while the temperature in the chamber is controlled to be maintained above a temperature achieved by an adiabatic expansion, the adiabatic expansion starting from the pressure and temperature at the end of the high-pressure processing step. To control in such a way, the temperature in the high-pressure processing chamber is controlled so as to suppress or recover a temperature descent caused by an adiabatic expansion during the depressurizing step. This solves a problem in which the temperature is decreased to the vapor-liquid phase coexistence region or a region in which a solid is deposited.Type: ApplicationFiled: August 11, 2004Publication date: March 10, 2005Applicant: Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel, Ltd.)Inventors: Yoshihiko Sakashita, Takahiko Ishii, Masahiro Yamagata, Tetsuya Yoshikawa
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Publication number: 20040226588Abstract: The corrosion resistance against hydrogen fluoride of a cleaning apparatus using a high-pressure fluid is markedly improved by making at least the surfaces of portions in contact with hydrogen fluoride out of a Fe-based alloy or Ni-based alloy containing a predetermined amount of Cr. Even when cleaning is carried out with the high-pressure fluid containing hydrogen fluoride by this cleaning apparatus, the apparatus has excellent durability and is free from the eluation of a metal which causes the deterioration of a micro-structure as an object to be cleaned.Type: ApplicationFiled: May 3, 2004Publication date: November 18, 2004Applicant: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)Inventors: Takashi Onishi, Tetsuya Yoshikawa, Shogo Sarumaru
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Publication number: 20040123484Abstract: Disclosed is a high pressure processing method for subjecting a processing object to a high pressure processing using a high pressure fluid. In this method, the high pressure fluid is brought into collision with the surface of the processing object placed in a high pressure processing chamber, and then distributed along the surface of the processing object in an outward direction beyond the processing object.Type: ApplicationFiled: October 21, 2003Publication date: July 1, 2004Applicants: KABUSHIKI KAISHA KOBE SEIKO SHO, DAINIPPON SCREEN MFG. CO., LTD.Inventors: Tetsuya Yoshikawa, Yoichi Inoue, Katsumi Watanabe, Kaoru Masuda, Katsuyuki Iijima, Tomomi Iwata, Yusuke Muraoka, Kimitsugu Saito, Ikuo Mizobata
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Publication number: 20030217764Abstract: A process for removing residues from the microstructure of an object is provided, which comprises steps of preparing a remover including carbon dioxide, an additive for removing the residues and a co-solvent dissolving the additive in said carbon dioxide at a pressurized fluid condition; and bringing the object into contact with the remover so as to remove the residues from the object. A composition for removing residues from the microstructure of an object is also provided.Type: ApplicationFiled: May 23, 2002Publication date: November 27, 2003Inventors: Kaoru Masuda, Katsuyuki Iijima, Tetsuya Yoshikawa, Darryl W. Peters
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Publication number: 20030077892Abstract: A temporary support layer 2 is formed on a semiconductor substrate 1, and the temporary support layer 2 is provided with a hole 4 that reaches the semiconductor substrate 1. The hole 4 is filled in with a conductor material 5, and by pressurizing the conductor material 5, the conductor material 5 and the semiconductor substrate 1 are pressure-bonded. Thereby, an aerial wiring structure whose bonding strength is improved and that has excellent self-sustainability can be obtained.Type: ApplicationFiled: September 30, 2002Publication date: April 24, 2003Applicant: Kabushiki Kaisha Kobe Seiko Sho(Kobe Steel, Ltd.)Inventors: Takao Fujikawa, Tetsuya Yoshikawa
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Patent number: 5103766Abstract: A vacuum arc deposition device having electrode switching means comprising two or more electrodes consisting of vacuum arc vapor evaporation source materials and a substrate to which films are formed by means of vacuum arc vapor deposition, each of the electrodes and the substrate being contained in a vacuum chamber capable of introducing a reactive gas, wherein the electrodes are connected to arc discharging DC power supplies by way of polarity switching means so that each of the electrodes functions as a cathode and an anode alternately. Films, in particular, of insulative property can stably be vapor deposited on a substrate for a long period of time continuously.Type: GrantFiled: June 19, 1990Date of Patent: April 14, 1992Assignee: Kabushiki Kaisha Kobe Seiko ShoInventors: Tetsuya Yoshikawa, Hakumi Hasegawa