Patents by Inventor Tetsuya Yukimoto

Tetsuya Yukimoto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10229814
    Abstract: A plasma processing apparatus has a circular chamber having an opening portion which serves as a plasma ejection port surrounded by a dielectric member, a gas supply pipe for introducing gas into the inside of the chamber, a coil provided in the vicinity of the chamber, a high-frequency power supply connected to the coil, and a base material mounting table.
    Type: Grant
    Filed: October 26, 2012
    Date of Patent: March 12, 2019
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tomohiro Okumura, Hiroshi Kawaura, Tetsuya Yukimoto
  • Patent number: 10147585
    Abstract: A plasma processing apparatus having a dielectric member that surrounds a circular chamber having a long shape and communicating with an opening portion having a long and linear shape, a gas supply pipe for introducing gas into an inside of the circular chamber, a coil provided in a vicinity of the circular chamber and having a long shape in parallel with a longitudinal direction of the opening portion, a high-frequency power supply connected to the coil, a base material mounting table that mounts a base material, and a moving mechanism that allows relative movement between the circular chamber and the base material mounting table in a perpendicular direction with respect to an longitudinal direction of the opening portion.
    Type: Grant
    Filed: April 8, 2014
    Date of Patent: December 4, 2018
    Assignee: Panasonic Intellectual Property Management Co., Ltd.
    Inventors: Tomohiro Okumura, Hiroshi Kawaura, Tetsuya Yukimoto
  • Patent number: 8802567
    Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
    Type: Grant
    Filed: December 5, 2013
    Date of Patent: August 12, 2014
    Assignee: Panasonic Corporation
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Hiroshi Kawaura, Tetsuya Yukimoto
  • Publication number: 20140220784
    Abstract: A plasma processing apparatus having a dielectric member that surrounds a circular chamber having a long shape and communicating with an opening portion having a long and linear shape, a gas supply pipe for introducing gas into an inside of the circular chamber, a coil provided in a vicinity of the circular chamber and having a long shape in parallel with a longitudinal direction of the opening portion, a high-frequency power supply connected to the coil, a base material mounting table that mounts a base material, and a moving mechanism that allows relative movement between the circular chamber and the base material mounting table in a perpendicular direction with respect to an longitudinal direction of the opening portion.
    Type: Application
    Filed: April 8, 2014
    Publication date: August 7, 2014
    Applicant: Panasonic Corporation
    Inventors: TOMOHIRO OKUMURA, HIROSHI KAWAURA, TETSUYA YUKIMOTO
  • Publication number: 20140094040
    Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
    Type: Application
    Filed: December 5, 2013
    Publication date: April 3, 2014
    Applicant: Panasonic Corporation
    Inventors: Tomohiro OKUMURA, Ichiro NAKAYAMA, Hiroshi KAWAURA, Tetsuya YUKIMOTO
  • Patent number: 8624340
    Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
    Type: Grant
    Filed: August 23, 2011
    Date of Patent: January 7, 2014
    Assignee: Panasonic Corporation
    Inventors: Tomohiro Okumura, Ichiro Nakayama, Hiroshi Kawaura, Tetsuya Yukimoto
  • Publication number: 20120058649
    Abstract: In a plasma torch unit, copper rods forming a coil as a whole are disposed inside copper rod inserting holes formed in a quartz block so that the quartz block is cooled by water flowing inside the copper rod inserting holes and cooling water pipes. A plasma ejection port is formed on the lowermost portion of the torch unit. While a gas is being supplied into a space inside an elongated chamber, high-frequency power is supplied to the copper rods to generate plasma in the space inside the elongated chamber so that the plasma is applied to a substrate.
    Type: Application
    Filed: August 23, 2011
    Publication date: March 8, 2012
    Inventors: Tomohiro OKUMURA, Ichiro NAKAYAMA, Hiroshi KAWAURA, Tetsuya YUKIMOTO
  • Patent number: 7666793
    Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment.
    Type: Grant
    Filed: November 30, 2004
    Date of Patent: February 23, 2010
    Assignees: Sony Corporation, CV Research Corporation
    Inventors: Kiwamu Adachi, Satoshi Horiuchi, Tetsuya Yukimoto
  • Patent number: 6916747
    Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film, and a film treatment process for improving the film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is maintained by a high-density plasma radiation treatment based upon ion and radical reactions, and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film, which is excellent in film quality, can be manufactured inexpensively by a low-temperature treatment.
    Type: Grant
    Filed: March 25, 2003
    Date of Patent: July 12, 2005
    Assignees: Sony Corporation, CV Research Corporation
    Inventors: Kiwamu Adachi, Satoshi Horiuchi, Tetsuya Yukimoto
  • Publication number: 20050095850
    Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment.
    Type: Application
    Filed: November 30, 2004
    Publication date: May 5, 2005
    Inventors: Kiwamu Adachi, Satoshi Horiuchi, Tetsuya Yukimoto
  • Publication number: 20030219985
    Abstract: A film deposition process for depositing an amorphous metal oxide film, for example, an amorphous tantalum oxide film and a film treatment process for improving film quality of the amorphous tantalum oxide film in the state in which an amorphous state of the amorphous metal oxide film is being maintained by a high-density plasma radiation treatment based upon ion and radical reactions and which contains at least oxygen at an ion current density higher than 5 mA/cm2 are carried out, whereby a low-temperature treatment in the whole process is made possible. In addition, since the amorphous metal oxide film, which is excellent in film quality, can be deposited, the amorphous metal oxide film can be made high in reliability and can be produced inexpensively. The amorphous tantalum oxide film which is excellent in film quality can be manufactured inexpensively by a low-temperature treatment.
    Type: Application
    Filed: March 25, 2003
    Publication date: November 27, 2003
    Inventors: Kiwamu Adachi, Satoshi Horiuchi, Tetsuya Yukimoto