Abstract: Wires (22) electrically connecting solar cells (10) include first wires (22a) and second wires (22b). The first wires (22a) are connected to the first-conductivity-type electrodes (12) of a first one of the solar cells (10) and the second-conductivity-type electrodes (13) of a second one of the solar cells 10 that is adjacent to the first one of the solar cells (10). The second wires (22b) are connected to the second-conductivity-type electrodes (13) of the first one of the solar cells (10) and the first-conductivity-type electrodes (12) of the second one of the solar cells (10). The second wires (22b) are electrically separated by holes (21a) extending through both the second wires (22b) and an insulating base member (21).

Abstract: Wires (22) electrically connecting solar cells (10) include first wires (22a) and second wires (22b). The first wires (22a) are connected to the first-conductivity-type electrodes (12) of a first one of the solar cells (10) and the second-conductivity-type electrodes (13) of a second one of the solar cells 10 that is adjacent to the first one of the solar cells (10). The second wires (22b) are connected to the second-conductivity-type electrodes (13) of the first one of the solar cells (10) and the first-conductivity-type electrodes (12) of the second one of the solar cells (10). The second wires (22b) are electrically separated by holes (21a) extending through both the second wires (22b) and an insulating base member (21).

Abstract: By increasing a pressure in a chamber flange (10) at a predetermined rate, the number of gas molecules that carry inner thermal energy is increased, which results in a uniform temperature distribution. Thus, non-melting residues of, air bubbles in, and insufficient expansion of the sealing resin (43) are reduced. After removal of the air bubbles (45), a pressure is applied between a substrate (41) and a sealing substrate (44), thereby the substrate (41), a solar cell (42), the sealing resin (43) and the sealing substrate (44) are adhered to each other.

Abstract: By increasing a pressure in a chamber flange (10) at a predetermined rate, the number of gas molecules that carry inner thermal energy is increased, which results in a uniform temperature distribution. Thus, non-melting residues of, air bubbles in, and insufficient expansion of the sealing resin (43) are reduced. After removal of the air bubbles (45), a pressure is applied between a substrate (41) and a sealing substrate (44), thereby the substrate (41), a solar cell (42), the sealing resin (43) and the sealing substrate (44) are adhered to each other.

Abstract: A solar cell module of the present invention is provided with: a unit solar cell (2) in which a first electrode (21) and a second electrode (22) are formed in a non-light-receiving face; a solar cell wiring member (1) including a first conductor wire (11) connected to the first electrode (21), a second conductor wire (12) connected to the second electrode (22), and a wiring sheet (10) in which the first conductor wire (11) and the second conductor wire (12) are formed; and a sealing resin sheet (33) that is laminated on the unit solar cell (2) and the solar cell wiring member (1) and that resin-seals the unit solar cell (2).

Abstract: A semiconductor laser device includes a package having a front surface, a rear surface and an outer peripheral surface; a semiconductor laser element and a light receiving element provided on the front surface; a plurality of leads arranged in spaced relation on the front surface as extending outward from the package; and an optical element supported above the front surface with its optical axis perpendicular to the front surface for guiding a laser beam emitted from the semiconductor laser element toward an object and guiding light reflected on the object to the light receiving element; wherein the outer peripheral surface is configured so as to be fitted in a cylindrical hole having an axis parallel to the optical axis of the optical element, and has a recess extending from the front surface to the rear surface, and the leads are bent as extending from the front surface and passing through the recess with distal portions thereof extending along the optical axis of the optical element and with proximal ends

Abstract: The present invention provides a semiconductor laser device of which reliability is enhanced. In the semiconductor laser device of the present invention, a semiconductor laser element 3 emitting laser light in a plane direction, a reflection mirror 4 reflecting the laser light in an upper direction and a light acceptance unit 5 detecting signal of incident laser light are disposed inside an insulative frame 2. A plurality of leads 8 extending in a horizontal direction are fixed in the end walls 2a, 2b opposed to each other in the longitudinal direction of the insulative frame 2. The insulative frame 2 is made of liquid crystal polymer.

Abstract: Silver paste is applied to a stem, and a semiconductor laser chip is mounted onto the stem on which the silver paste has been applied. Next, the semiconductor laser chip mounted on the stem, while kept pressurized toward the stem with a collet, is heated to make the silver paste temporarily cured, by which the semiconductor laser chip is fixed onto the stem. Then, after a temporary curing step, the silver paste is finally cured within a thermostat. The semiconductor laser device thus manufactured is low in thermal resistance and reduced in variations of operating current and prevented from short-circuiting of the semiconductor laser chip.

Abstract: In a semiconductor laser device, a plane of polarization of a laser beam emitted by a semiconductor laser (4) is inclined from a substrate surface (4A), allowing the semiconductor laser (4) to be higher in power and higher in reliability. Moreover, a die-bond surface (17) of this semiconductor laser (4) is inclined by a specified inclination angle ? with respect to the reference surface (3) of the stem body (1), so that the plane of polarization of the laser beam can be made generally parallel to the reference surface (3) of the stem body (1). Thus, there can be provided a semiconductor laser device which is capable of contributing to a thinning of an optical pickup device and easy to manufacture.

Abstract: The present invention provides a semiconductor laser device of which reliability is enhanced. In the semiconductor laser device of the present invention, a semiconductor laser element 3 emitting laser light in a plane direction, a reflection mirror 4 reflecting the laser light in an upper direction and a light acceptance unit 5 detecting signal of incident laser light are disposed inside an insulative frame 2. A plurality of leads 8 extending in a horizontal direction are fixed in the end walls 2a, 2b opposed to each other in the longitudinal direction of the insulative frame 2. The insulative frame 2 is made of liquid crystal polymer.

Abstract: A semiconductor laser device includes a package having a front surface, a rear surface and an outer peripheral surface; a semiconductor laser element and a light receiving element provided on the front surface; a plurality of leads arranged in spaced relation on the front surface as extending outward from the package; and an optical element supported above the front surface with its optical axis perpendicular to the front surface for guiding a laser beam emitted from the semiconductor laser element toward an object and guiding light reflected on the object to the light receiving element; wherein the outer peripheral surface is configured so as to be fitted in a cylindrical hole having an axis parallel to the optical axis of the optical element, and has a recess extending from the front surface to the rear surface, and the leads are bent as extending from the front surface and passing through the recess with distal portions thereof extending along the optical axis of the optical element and with proximal ends

Abstract: In a semiconductor laser device, a plane of polarization of a laser beam emitted by a semiconductor laser (4) is inclined from a substrate surface (4A), allowing the semiconductor laser (4) to be higher in power and higher in reliability. Moreover, a die-bond surface (17) of this semiconductor laser (4) is inclined by a specified inclination angle &thgr; with respect to the reference surface (3) of the stem body (1), so that the plane of polarization of the laser beam can be made generally parallel to the reference surface (3) of the stem body (1). Thus, there can be provided a semiconductor laser device which is capable of contributing to a thinning of an optical pickup device and easy to manufacture.

Abstract: Silver paste is applied to a stem, and a semiconductor laser chip is mounted onto the stem on which the silver paste has been applied. Next, the semiconductor laser chip mounted on the stem, while kept pressurized toward the stem with a collet, is heated to make the silver paste temporarily cured, by which the semiconductor laser chip is fixed onto the stem. Then, after a temporary curing step, the silver paste is finally cured within a thermostat. The semiconductor laser device thus manufactured is low in thermal resistance and reduced in variations of operating current and prevented from short-circuiting of the semiconductor laser chip.