Abstract: A semiconductor device includes a semiconductor element; a group of back-inner terminals coupled with the semiconductor element through bonding wires and arranged in an area array shape so as to be exposed inside of the bottom; a group of back-outer terminals arranged outside the group of back-inner terminals; a group of front-outer terminals located immediately above the back-outer terminals to be exposed from the front surface, which are electrically coupled with the back-outer terminals located immediately therebelow through coupling conductors, respectively; and a sealing resin which seals the semiconductor element and bonding wires and non-exposed portions of said back-inner terminals, back-outer terminals and front-outer terminals. On at least the respective terminal faces of said back-inner terminals, back-outer terminals and front-outer terminals, noble-metal plated layers are formed.

Abstract: A method of manufacturing a semiconductor device 28 in which a plating mask 38, 39 having a noble metal plating layer 35 as an uppermost layer is formed at a predetermined portion on an obverse surface side or a reverse surface side of a leadframe material 10, and the leadframe material 10 is consecutively subjected to etching by using the plating mask 38, 39 as a resist mask, so as to form external connection terminal portions 22 which electrically communicate with a semiconductor element 18 disposed in an interior of an encapsulating resin 21, and which project downwardly. Base metal plating or noble metal plating 33 exhibiting etching solution resistance is provided as a lowermost layer of the plating mask 38, 39.

Abstract: A semiconductor device includes a semiconductor element; a group of back-inner terminals coupled with the semiconductor element through bonding wires and arranged in an area array shape so as to be exposed inside of the bottom; a group of back-outer terminals arranged outside the group of back-inner terminals; a group of front-outer terminals located immediately above the back-outer terminals to be exposed from the front surface, which are electrically coupled with the back-outer terminals located immediately therebelow through coupling conductors, respectively; and a sealing resin which seals the semiconductor element and bonding wires and non-exposed portions of said back-inner terminals, back-outer terminals and front-outer terminals. On at least the respective terminal faces of said back-inner terminals, back-outer terminals and front-outer terminals, noble-metal plated layers are formed.

Abstract: A method of manufacturing a semiconductor device 28 in which a plating mask 38, 39 having a noble metal plating layer 35 as an uppermost layer is formed at a predetermined portion on an obverse surface side or a reverse surface side of a leadframe material 10, and the leadframe material 10 is consecutively subjected to etching by using the plating mask 38, 39 as a resist mask, so as to form external connection terminal portions 22 which electrically communicate with a semiconductor element 18 disposed in an interior of an encapsulating resin 21, and which project downwardly. Base metal plating or noble metal plating 33 exhibiting etching solution resistance is provided as a lowermost layer of the plating mask 38, 39.