Abstract: This invention relates to a chemical mechanical polishing slurry comprising polishing grains, ammonium nitrate as an oxidizing agent, 1,2,4-triazole as a polishing promoter for a copper metal film and water and having a pH within a range of 3 to 4. The polishing slurry is suitable for forming a damascene copper-based metal interconnection comprising a tantalumr-based metal as a barrier metal film material.

Abstract: A slurry for polishing copper-based metal containing a silica polishing material, an oxidizing agent, an amino acid, a triazole-based compound and water, wherein a content ratio of amino acid to triazole-based compound (amino acid/triazole-based compound (weight ratio)) is 5 to 8.

Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

Abstract: A scratch card is provided comprising a substrate, a layer containing information to be concealed, a slipping layer and a concealing layer, laminated in this order, wherein said concealing layer essentially composed of concealing pigment and a binder. With this composition, easy removal by nails and coins is possible, while the removal does not generate latex dust.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt % to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention relates to free abrasive slurries suited for use in polishing workpieces composed of materials varying in hardness, uniformly without selective polishing or working without difference in the amounts of polishing for different materials. The subject matter of this invention is a free abrasive slurry composition for polishing workpieces in which at least one soft material with a Vickers hardness in the range of 26 to 360 and at least one hard material with a Vickers hardness in the range of 700 to 4000 are mixedly present, comprising a polyol with a molecular weight ranging from 300 to 20000, a polishing powder, a dispersion medium, and optionally a surfactant.

Abstract: By using a polishing slurry which comprises, at least, a polishing grain, an oxidizing agent and a higher-mono-primary amine, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a metal film formed on an insulating film with a concave on a substrate wherein the slurry contains a thickener without an ionic group with an opposite sign to a charge on a polishing material surface to 0.001 wt % or more and less than 0.05 wt% to the total amount of the slurry and has a slurry viscosity of 1 mPa·s to 5 mPa·s both inclusive. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing or erosion.

Abstract: By using a polishing slurry which contains, at least, a polishing grain, an oxidizing agent and a basic amino acid compound, it is possible to suppress dishing and erosion liable to be produced in chemical mechanical polishing (CMP) for a copper-based metal film when forming a buried interconnection of a copper-based metal on a barrier metal film of a tantalum-based metal.

Abstract: This invention provides a chemical mechanical polishing slurry for polishing a copper-based metal film formed on an insulating film comprising a concave on a substrate, comprising a polishing material, an oxidizing agent and water as well as a benzotriazole compound and a triazole compound. The polishing slurry may be used in CMP to form a reliable damascene electric connection with excellent electric properties at a higher polishing rate, i.e., a higher throughput while preventing dishing.

Abstract: The present invention relates to a slurry used for chemical mechanical polishing of a substrate having an insulating film and a tantalum-containing metal film formed on the insulting film, which slurry contains a silica abrasive and a polycarboxylic acid such as oxalic acid, malonic acid, tartaric acid, malic acid, glutaric acid, citric acid, maleic acid or the like. According to the present invention, a buried electric connection of high reliability and excellent electrical properties can be formed at a high polishing rate, i.e. at a high throughput with the generation of dishing and erosion being suppressed.

Abstract: In forming a damascene interconnect made of a copper-containing metal on a barrier metal film made of a tantalum-containing metal, erosion is prevented during chemical mechanical polishing of the copper-containing metal film, by using a polishing slurry comprising at least an alkanolamine represented by general formula (1):

Abstract: In chemical mechanical polishing of a substrate comprising a tantalum-containing metal film, a slurry for chemical mechanical polishing comprising a silica polishing grain and an inorganic salt in an amount of 0.01 wt % to 10 wt % both inclusive may be used to prevent dishing and erosion, as well as to achieve an improved polishing rate for tantalum without any damage to tantalum.

Abstract: The present invention relates to a slurry used for chemical mechanical polishing of a substrate having a copper-containing film at the surface, which slurry contains an abrasive, an oxidizing agent, and an adhesion-inhibitor preventing adhesion of a polishing product to a polishing pad. With the polishing slurry of the present invention, even when the copper-containing metal film to be polished has a large thickness or a large area and therefore the amount of the copper-containing metal to be polished is large, adhesion of polishing product to a polishing pad is suppressed and CMP can be completed satisfactorily in a single polishing operation without discontinuation.

Abstract: In chemical mechanical polishing of a copper metal film, contamination of a polishing pad may be prevented by using a slurry for chemical mechanical polishing consisting of &thgr;-alumina which mainly comprises secondary particles made of aggregated primary particles as polishing grains.