Patents by Inventor Tetsuyuki MATSUMOTO

Tetsuyuki MATSUMOTO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Gas supply member, plasma processing apparatus, and method for forming coating film
    Patent number: 11164726
    Abstract: A gas supply member according to an embodiment includes: a base material that has a gas flow path capable of flowing a gas from an upstream side to a downstream side, a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and a discharge port connecting the gas flow path and the main surface; and a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material. The film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.
    Type: Grant
    Filed: July 15, 2019
    Date of Patent: November 2, 2021
    Assignee: Toshiba Memory Corporation
    Inventors: Tetsuyuki Matsumoto, Makoto Saito, Hisashi Hashiguchi
  • GAS SUPPLY MEMBER, PLASMA PROCESSING APPARATUS, AND METHOD FOR FORMING COATING FILM
    Publication number: 20200258719
    Abstract: A gas supply member according to an embodiment includes: a base material that has a gas flow path capable of flowing a gas from an upstream side to a downstream side, a main surface arranged on the downstream side of the gas flow path in a direction intersecting an extending direction of the gas flow path, and a discharge port connecting the gas flow path and the main surface; and a film that contains at least one of yttria, yttrium oxyfluoride, yttrium fluoride, alumina, and aluminum nitride and covers the main surface and a surface of the discharge port of the base material. The film covers the main surface and the surface of the discharge port such that a surface of the film does not have a surface orientation portion of which a normal intersects a normal of the main surface at 45° to 75°.
    Type: Application
    Filed: July 15, 2019
    Publication date: August 13, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Tetsuyuki MATSUMOTO, Makoto Saito, Hisashi Hashiguchi