Abstract: A MOS transistor is featured by the provision of a conductive covering element for covering a drift channel region of the semiconductor device. The covering element is interposed by an insulating layer which is relatively thick. The covering element comprises a floating conductive element, disposed on the insulating layer, and a field plate means, disposed on a second insulating layer.

Abstract: High voltage diffusion-self-alignment metal oxide semiconductor devices and control logic circuitry therefor are integrated in a single semiconductor body. The integrated semiconductor device includes a considerably large number of output terminals compared to the number of input terminals. The output terminals develop signals of high voltages derived from the high voltage diffusion-self-alignment metal oxide semiconductor devices which are positioned at a peripheral zone of the semiconductor body.

Abstract: In a metal oxide semiconductor device of the diffusion-self-alignment type which comprises a semiconductor body having a conductivity of one type, a drain and a source regions having a conductivity opposite that of the semiconductor body, and a channel region of the same conductivity type as the semiconductor body and having a higher conductivity than that of the semiconductor body, said channel region being formed in such a manner to surround the source region through the use of double diffusion techniques. An active pinched resistor layer of the opposite conductivity type to that of the semiconductor body and having a lower conductivity than that of the drain and the source regions is formed on the surface of the semiconductor body to extend between the drain and the channel regions.