Abstract: The electrochromic element (20) comprises a substrate (28) and an electrochromic layer (25) having a thickness d on the basis of a metal oxide selected from the group formed by tungsten oxide, molybdenum oxide, niobium oxide, manganese oxide and zirconium oxide, or combinations thereof. The electrochromic layer (25) is characterized in that the oxygen content in the layer (25) varies across the thickness d of the layer (25). Preferably, the variation of the oxygen content in the layer (25) comprises at least two local maxima and a local minimum. Preferably, the electrochromic layer (25) is composed of a plurality of sub-layers (25', 25", 25'"), with the variation of the oxygen content in the layer (25) occurring predominantly at the location of transitions between two sub-layers. Preferably, the electrochromic layer (25) comprises the metal oxide tungsten oxide WO.sub.x. The electrochromic element may be provided on the display screen of a display device.

Abstract: Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.

Abstract: A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %. Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.

Abstract: A device having a switch comprises a chromium layer and an adjacent semiconductor layer. The fraction of voids in the chromium layer is less than 10%, preferably less than 2%. The chromium layer in the device comprises traces of neon with a concentration of less than 0.1 at. %.Chromium layers are deposited on a substrate by means of a sputter deposition process. By using neon as the working gas at pressures of less than 1 Pa, preferably in the range from 0.2 Pa to 0.5 Pa, the sputter-deposited chromium layers are substantially free of internal stress and have a density which is approximately equal to that of bulk chromium.

Abstract: In an LCD internal reflections are reduced by giving the inner side of a metal pattern functioning, for example as a light shield (black matrix) a porous structure. The porous structure is obtained by means of a sputtering process in which the sputtering pressure is increased for providing the porous sub-layer, while the layer is etched and/or oxidized to obtain a satisfactory density.

Abstract: In an LCD internal reflections are reduced by giving the inner side of a metal pattern functioning, for example as a light shield (black matrix) a porous structure. The porous structure is obtained by means of a sputtering process in which the sputtering pressure is increased for providing the porous sub-layer, while the layer is etched and/or oxidized to obtain a satisfactory density.

Abstract: Semiconductor device and method of manufacturing same, display device and support plate for same provided with such a semiconductor device. A semiconductor device having an insulating substrate on which a Schottky diode is formed between a metal layer and a semiconductor layer of polycrystalline or amorphous silicon extending over the metal layer is used inter alia in matrix display devices, such as LCDs. The Schottky diode forms part of a switching element of such a device and must have a low reverse current up to a reverse voltage of, for example, approximately 10 V. The known semiconductor device having Schottky diodes, in which the semiconductor material extends over a lateral surface of the Schottky metal, is found not to comply with this requirement. To overcome this deficiency a low leakage current is realized over a wide reverse voltage range due to the presence of a dielectric on the lateral surface of the Schottky metal. The dielectric suppresses the leakage current issuing from the lateral surface.