Abstract: An apparatus, according to one embodiment, includes a sensor having an active region, a magnetic shield adjacent the active region, a spacer between the active region and the magnetic shield, a second magnetic shield on an opposite side of the active region as the magnetic shield, and a second spacer between the active region and the second magnetic shield. Both spacers include an electrically conductive ceramic layer. The sensor is an electronic lapping guide.

Abstract: An apparatus, according to one embodiment, includes a sensor having an active region, a magnetic shield adjacent the active region, a spacer between the active region and the magnetic shield, a second magnetic shield on an opposite side of the active region as the magnetic shield, and a second spacer between the active region and the second magnetic shield. Both spacers include an electrically conductive ceramic layer. The sensor is an electronic lapping guide.

Abstract: In one general embodiment, a method includes performing a reducing operation for reducing a native oxide along a surface of a CoFe layer of a magnetic transducer, after performing the reducing operation, performing an oxidation operation for oxidizing the surface of the CoFe layer, and after performing the oxidation operation, forming a layer of at least partially crystalline alumina on the oxidized surface of the CoFe layer.

Abstract: An apparatus according to one embodiment includes a sensor having an active region, a magnetic shield adjacent the active region, a spacer between the active region and the magnetic shield, a second magnetic shield on an opposite side of the active region as the magnetic shield, and a second spacer between the active region and the second magnetic shield. Both spacers include an electrically conductive ceramic layer. The electrically conductive ceramic layer of the spacer has a different composition than the electrically conductive ceramic layer of the second spacer.

Abstract: In one general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

Abstract: An apparatus according to one embodiment includes a sensor having an active region, a magnetic shield adjacent the active region, a spacer between the active region and the magnetic shield, a second magnetic shield on an opposite side of the active region as the magnetic shield, and a second spacer between the active region and the second magnetic shield. Both spacers include an electrically conductive ceramic layer. The electrically conductive ceramic layer of the spacer has a different composition than the electrically conductive ceramic layer of the second spacer.

Abstract: An apparatus according to one embodiment includes a sensor having an active region, a magnetic shield adjacent the active region, and a spacer between the active region and the magnetic shield. The spacer includes an electrically conductive ceramic layer. An apparatus according to another embodiment includes a sensor having an active tunnel magnetoresistive region, a magnetic shield adjacent the tunnel magnetoresistive region, and a spacer between the tunnel magnetoresistive region and the magnetic shields. The spacer includes an electrically conductive ceramic layer.

Abstract: In one general embodiment, a method includes performing a reducing operation for reducing a native oxide along a surface of a CoFe layer of a magnetic transducer, after performing the reducing operation, performing an oxidation operation for oxidizing the surface of the CoFe layer, and after performing the oxidation operation, forming a layer of at least partially crystalline alumina on the oxidized surface of the CoFe layer.

Abstract: In one general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

Abstract: In one general embodiment, an apparatus includes a magnetic transducer having a CoFe layer and an at least partially polycrystalline alumina-containing coating on a media facing side of the CoFe layer. A graded layer comprising Co, Fe, Al and oxygen is positioned between the alumina-containing coating and the CoFe layer, wherein a ratio of Co to Al in the graded layer decreases from the CoFe layer toward the alumina-containing coating. In another general embodiment, an apparatus includes a magnetic transducer having a CoFe layer and an at least partially polycrystalline alumina-containing coating on a media facing side of the CoFe layer. CoFe-oxide crystallites are present at an interface region of the CoFe layer and the alumina-containing coating and the CoFe layer. Fabrication methods are also presented.

Abstract: In one general embodiment, an apparatus includes a magnetic transducer having a CoFe layer and an at least partially polycrystalline alumina-containing coating on a media facing side of the CoFe layer. A graded layer comprising Co, Fe, Al and oxygen is positioned between the alumina-containing coating and the CoFe layer, wherein a ratio of Co to Al in the graded layer decreases from the CoFe layer toward the alumina-containing coating. In another general embodiment, an apparatus includes a magnetic transducer having a CoFe layer and an at least partially polycrystalline alumina-containing coating on a media facing side of the CoFe layer. CoFe-oxide crystallites are present at an interface region of the CoFe layer and the alumina-containing coating and the CoFe layer. Fabrication methods are also presented.

Abstract: A chromium oxide film is formed at room temperature. The chromium oxide film has at least one partially polycrystalline portion and/or at least one amorphous portion depending upon the substrate(s) over which the chromium oxide film is formed. Partially polycrystalline portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of at least 100 kilovolts to further crystallize the partially polycrystalline portion(s). Amorphous portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of more than 100 kilovolts to crystallize the amorphous portion(s).

Abstract: A method for manufacturing an alumina-based layer structure having transition regions between layers is disclosed. The method may include ion milling a stainless steel structure surface to partially reduce a metal oxide layer from, and create an exposed portion of, the surface. The method may include oxidizing the exposed portion of the surface to form a crystallized metal oxide bonding layer, growing a crystallized alumina layer onto the metal oxide bonding layer, and diffusing metal from the surface into the crystallized alumina layer, to form a graded aluminate spinel layer. The method may include forming a first transition region from the graded aluminate spinel layer to a crystalline alumina layer, growing the crystalline alumina layer from the first transition region, forming a second transition region from the crystalline alumina layer to an amorphous alumina layer, and growing the amorphous alumina layer from the second transition region.

Abstract: In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

Abstract: An apparatus according to one embodiment includes a sensor having an active region, a magnetic shield adjacent the active region, and a spacer between the active region and the magnetic shield. The spacer includes an electrically conductive ceramic layer. An apparatus according to another embodiment includes a sensor having an active tunnel magnetoresistive region, a magnetic shield adjacent the tunnel magnetoresistive region, and a spacer between the tunnel magnetoresistive region and the magnetic shields. The spacer includes an electrically conductive ceramic layer.

Abstract: In one general embodiment, an apparatus includes a magnetic tunnel junction device having a reference layer, a free layer, and a tunnel barrier layer between the free and reference layers. The tunnel barrier layer is primarily crystalline alumina. In another general embodiment, a method includes forming a first magnetic layer, forming a tunnel barrier layer above the first magnetic layer, and forming a second magnetic layer above the tunnel barrier layer. The tunnel barrier layer includes crystalline alumina. The tunnel barrier layer is formed at a temperature of less than 100 degrees centigrade.

Abstract: A chromium oxide film is formed at room temperature. The chromium oxide film has at least one partially polycrystalline portion and/or at least one amorphous portion depending upon the substrate(s) over which the chromium oxide film is formed. Partially polycrystalline portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of at least 100 kilovolts to further crystallize the partially polycrystalline portion(s). Amorphous portion(s) of the chromium oxide film are exposed, at room temperature, to an electron beam that has an accelerating voltage of more than 100 kilovolts to crystallize the amorphous portion(s).

Abstract: In one general embodiment, an apparatus includes a sensor having an active tunnel magnetoresistive region, magnetic shields flanking the tunnel magnetoresistive region, and spacers between the active tunnel magnetoresistive region and the magnetic shields. The active tunnel magnetoresistive region includes a free layer, a tunnel barrier layer and a reference layer. At least one of the spacers includes an electrically conductive ceramic layer. The presence of the electrically conductive ceramic layer enables current-perpendicular-to-plane operation, while enhancing wear resistance and resistance to deformities of the thin films.

Abstract: A method for manufacturing an alumina-based layer structure having transition regions between layers is disclosed. The method may include ion milling a stainless steel structure surface to partially reduce a metal oxide layer from, and create an exposed portion of, the surface. The method may include oxidizing the exposed portion of the surface to form a crystallized metal oxide bonding layer, growing a crystallized alumina layer onto the metal oxide bonding layer, and diffusing metal from the surface into the crystallized alumina layer, to form a graded aluminate spinel layer. The method may include forming a first transition region from the graded aluminate spinel layer to a crystalline alumina layer, growing the crystalline alumina layer from the first transition region, forming a second transition region from the crystalline alumina layer to an amorphous alumina layer, and growing the amorphous alumina layer from the second transition region.

Abstract: A method for manufacturing an alumina-based layer structure having transition regions between layers is disclosed. The method may include ion milling a stainless steel structure surface to partially reduce a metal oxide layer from, and create an exposed portion of, the surface. The method may include oxidizing the exposed portion of the surface to form a crystallized metal oxide bonding layer, growing a crystallized alumina layer onto the metal oxide bonding layer, and diffusing metal from the surface into the crystallized alumina layer, to form a graded aluminate spinel layer. The method may include forming a first transition region from the graded aluminate spinel layer to a crystalline alumina layer, growing the crystalline alumina layer from the first transition region, forming a second transition region from the crystalline alumina layer to an amorphous alumina layer, and growing the amorphous alumina layer from the second transition region.