Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model and provides the AR/VR image to an AR/VR viewing device for display.

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an augmented-reality or virtual-reality (AR/VR) image of the model that shows a 3D shape of the model and provides the AR/VR image to an AR/VR viewing device for display.

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

Abstract: A semiconductor metrology tool inspects an area of a semiconductor wafer. The inspected area includes a plurality of instances of a 3D semiconductor structure arranged periodically in at least one dimension. A computer system generates a model of a respective instance of the 3D semiconductor structure based on measurements collected during the inspection. The computer system renders an image of the model that shows a 3D shape of the model and provides the image to a device for display.

Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.

Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.

Abstract: The disclosure is directed to improving optical metrology for a sample with complex structural attributes utilizing custom designed secondary targets. At least one parameter of a secondary target may be controlled to improve sensitivity for a selected parameter of a primary target and/or to reduce correlation of the selected parameter with other parameters of the primary target. Parameters for the primary and secondary target may be collected. The parameters may be incorporated into a scatterometry model. Simulations utilizing the scatterometry model may be conducted to determine a level of sensitivity or a level of correlation for the selected parameter of the primary target. The controlled parameter of the secondary target may be modified until a selected level of sensitivity or a selected level of correlation is achieved.

Abstract: Optimization of optical parametric models for structural analysis using optical critical dimension metrology is described. A method includes determining a first optical model fit for a parameter of a structure. The first optical model fit is based on a domain of quantities for a first model of the structure. A first near optical field response is determined for a first quantity of the domain of quantities and a second near optical field response is determined for a second, different quantity of the domain of quantities. The first and second near optical field responses are compared to locate a common region of high optical field intensity for the parameter of the structure. The first model of the structure is modified to provide a second, different model of the structure. A second, different optical model fit is determined for the parameter of the structure based on the second model of the structure.

Abstract: A method is presented for selecting the order in which parameters are evaluated for inclusion in a model of a film stack, which is by ranking them according to measurement precision. Further, a method is presented for determining which parameters are to be floated, set, or discarded from the model, which is by determining whether average chi-square and chi-square uniformity decreases or increases when the parameter is added to the model. In this manner, a model for the film stack can be quickly assembles with a high degree of accuracy.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. A plurality of targets is provided. Each target includes a portion of the first and second structures and each is designed to have an offset between its first and second structure portions. The targets are illuminated with electromagnetic radiation to thereby obtain spectra from each target at a ?1st diffraction order and a +1st diffraction order.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb; target C is designed to have an offset Xc; and target D is designed to have an offset Xd. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd. The targets A, B, C and D are illuminated with electromagnetic radiation to obtain spectra SA, SB, SC, and SD from targets A, B, C, and D, respectively. Any overlay error between the first structures and the second structures is then determined using a linear approximation based on the obtained spectra SA, SB, SC, and SD.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.

Abstract: Disclosed are techniques, apparatus, and targets for determining overlay error between two layers of a sample. In one embodiment, a method for determining overlay between a plurality of first structures in a first layer of a sample and a plurality of second structures in a second layer of the sample is disclosed. Targets A, B, C and D that each include a portion of the first and second structures are provided. Target A is designed to have an offset Xa between its first and second structures portions; target B is designed to have an offset Xb between its first and second structures portions; target C is designed to have an offset Xc between its first and second structures portions; and target D is designed to have an offset Xd between its first and second structures portions. Each of the offsets Xa, Xb, Xc and Xd is preferably different from zero; Xa is an opposite sign and differ from Xb; and Xc is an opposite sign and differs from Xd.

Abstract: A method for determining one or more process parameter settings of a photolithographic system is disclosed.