Abstract: One example discloses a finFet semiconductor device and corresponding manufacturing method is disclosed, the device comprising: a substrate having therein a body-region, a plurality of elongate fins at a first major surface and within the body-region; an oxide layer on the first major surface and partially surrounding a lower portion of the elongate fins; a gate contact extending across and partially surrounding an upper portion of the plurality of elongate fins; a dielectric material, between the fins and the gate region; a plurality of elongate partial fins, parallel thereto and having a height which is less than a height thereof; an elongate metal contact, extending into the substrate and in electrical contact with the partial fins, and forming a body-contact; wherein the elongate metal contact extends between the two of the elongate partial fins and below an upper surface thereof and fills a space therebetween.

Abstract: A switch including a first electrical terminal, the first electrical terminal including a blade pivotable between an open position and a closed position, and a rod extending from the first electrical terminal parallel to the blade. The switch further includes a second electrical terminal configured to receive the blade when in the closed position, the second electrical terminal including a vacuum interrupter, wherein the vacuum interrupter engages the rod when in the closed position. Rotating the first electrical terminal in a first direction causes the blade to disengage from the second electrical terminal at a first point, and further rotating the first electrical terminal in the first direction causes the rod to disengage from the vacuum interrupter at a second point.

Abstract: Described herein relates to a multi-component adaptor assembly including a resin reservoir adaptor disposed on a printing surface of a preexisting additive manufacturing device, and including a build platform adaptor secured to a translatable arm of the preexisting additive manufacturing device. The resin reservoir adaptor is used to modify an existing resin reservoir by creating one or more smaller reservoirs within the larger housing, thereby reducing an amount of resin stored within the device to reduce resin waste. Moreover, the rotating and/or sliding build platform adaptor is designed to selectively contact one or more of the reservoirs of the resin reservoir adaptor, thereby selectively printing components of an additive manufactured process.

Abstract: Embodiments of self-heating tracking circuits for a power amplifier (PA) are disclosed. In an embodiment, a self-heating tracking circuit for a PA includes a PA replica circuit in proximity to the PA and an estimation unit configured to estimate a self-heating time constant of the PA in response to turning on the PA replica circuit and turning off the PA replica circuit.

Abstract: A switch including a first electrical terminal, the first electrical terminal including a blade pivotable between an open position and a closed position, and a rod extending from the first electrical terminal parallel to the blade. The switch further includes a second electrical terminal configured to receive the blade when in the closed position, the second electrical terminal including a vacuum interrupter, wherein the vacuum interrupter engages the rod when in the closed position. Rotating the first electrical terminal in a first direction causes the blade to disengage from the second electrical terminal at a first point, and further rotating the first electrical terminal in the first direction causes the rod to disengage from the vacuum interrupter at a second point.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor region of a first semiconductor type, formed within the semiconductor substrate, wherein the first semiconductor region includes a first doped region formed in a lower portion of the first semiconductor region and a second doped region formed over the first doped region in an upper portion of the first semiconductor region. A defect layer having an upper surface formed in an upper portion of the first doped region. A second semiconductor region of a second semiconductor type is formed over the first semiconductor region.

Abstract: A semiconductor device and methods of forming the same include a semiconductive fin protruding vertically from a body region and extending along a first direction, an insulator material above the body region and surrounding a lower portion of the fin, and a gap region between first and second ends of the semiconductive fin where at least a top portion of the semiconductive fin is absent. The device includes current terminals coupled to first and second ends of the fin, and a gate electrode and a gate extension coupled to the fin. The gate electrode surrounds the top portion of the semiconductive fin and is separated from the semiconductive by a gate insulator material. The gate extension has a first end adjacent to the gate electrode and a second end above the body region within the gap region.

Abstract: A multi-component adaptor assembly including a resin reservoir adaptor disposed on a printing surface of a preexisting additive manufacturing device, and including a build platform adaptor secured to a translatable arm of the preexisting additive manufacturing device. The resin reservoir adaptor is used to modify an existing resin reservoir by creating one or more smaller reservoirs within the larger housing, thereby reducing an amount of resin stored within the device to reduce resin waste. Moreover, the rotating and/or sliding build platform adaptor is designed to selectively contact one or more of the reservoirs of the resin reservoir adaptor, thereby selectively printing components of an additive manufactured process. The multi-component adaptor assembly allows for additive manufacturing projects using less resin with fewer waste products; simultaneous printing of identical structures; and the selective printing of different components of a structure during a single printing cycle.

Abstract: An antenna includes: a dielectric substrate; a conductive plane formed on a back surface of the dielectric substrate; a radiating element having a linear shape and formed on a front surface of the dielectric substrate; a shorting pin connecting one end of the radiating element to the conductive plane; and a power supply pin that is connected to the radiating element, at a point a predetermined distance away from the one end to which the shorting pin is connected, through a hole provided in the conductive plane, and that supplies a transmission signal to the radiating element. A radio wave is emitted from the radiating element.

Abstract: A semiconductor device includes a semiconductor substrate, a first semiconductor region of a first semiconductor type, formed within the semiconductor substrate, wherein the first semiconductor region includes a first doped region formed in a lower portion of the first semiconductor region and a second doped region formed over the first doped region in an upper portion of the first semiconductor region. A defect layer having an upper surface formed in an upper portion of the first doped region. A second semiconductor region of a second semiconductor type is formed over the first semiconductor region.

Abstract: An antenna includes: a dielectric substrate; a conductive plane formed on a back surface of the dielectric substrate; a radiating element having a linear shape and formed on a front surface of the dielectric substrate; a shorting pin connecting one end of the radiating element to the conductive plane; and a power supply pin that is connected to the radiating element, at a point a predetermined distance away from the one end to which the shorting pin is connected, through a hole provided in the conductive plane, and that supplies a transmission signal to the radiating element. A radio wave is emitted from the radiating element.

Abstract: A switch including a first electrical terminal, the first electrical terminal including a blade pivotable between an open position and a closed position, and a rod extending from the first electrical terminal parallel to the blade. The switch further includes a second electrical terminal configured to receive the blade when in the closed position, the second electrical terminal including a vacuum interrupter, wherein the vacuum interrupter engages the rod when in the closed position. Rotating the first electrical terminal in a first direction causes the blade to disengage from the second electrical terminal at a first point, and further rotating the first electrical terminal in the first direction causes the rod to disengage from the vacuum interrupter at a second point.

Abstract: A fringe capacitor comprises a plurality of unidirectional metal layers, wherein an orientation of a preferred direction of each of the unidirectional metal layers is in a same direction. First fingers of the fringe capacitor are formed in a first layer of the unidirectional metal layers, the first fingers being interdigitated and having a direction parallel to the orientation of the preferred direction. Second fingers of the fringe capacitor are formed in a second layer of the unidirectional metal layers, the second fingers being interdigitated and having a direction parallel to the orientation of the preferred direction, the first layer and the second layer separated by at least a layer of not having the orientation of the preferred direction and not having fingers of the fringe capacitor.

Abstract: A fringe capacitor comprises a plurality of unidirectional metal layers, wherein an orientation of a preferred direction of each of the unidirectional metal layers is in a same direction. First fingers of the fringe capacitor are formed in a first layer of the unidirectional metal layers, the first fingers being interdigitated and having a direction parallel to the orientation of the preferred direction.

Abstract: The present disclosure provides a method for processing data by an edge node including: receiving a data request from an application; confirming whether first data corresponding to the data request is included in a content storage of the edge node; confirming whether there is second data having a correlation with the first data which is equal to or higher than a predetermined threshold value based on a previously stored mapping table when the first data is not included in the content storage of the edge node; and transmitting the second data to the application when there is the second data having the correlation with the first data which is equal to or higher than the threshold value.

Abstract: A sensing system includes a sensor including a flexible substrate and a graphene oxide sensing element deposited on the flexible substrate. The graphene oxide sensing element has first and second sides. First and second electrical connectors coupled to the first and second sides of the graphene oxide sensing element, respectively. A power source is coupled to the first and second electrical connectors of the sensor and is adapted to apply a constant voltage to the sensor. The sensing system also includes a measurement element measuring a current in the graphene oxide sensing element due to the constant voltage and a calculation element calculating an electrical resistance of the graphene oxide sensing element based on the electrical current and the constant voltage and calculating a condition at a location of the sensor based on a relationship between the electrical resistance and the condition for the graphene oxide sensing element.

Abstract: A switch including a first electrical terminal, the first electrical terminal including a blade pivotable between an open position and a closed position, and a rod extending from the first electrical terminal parallel to the blade. The switch further includes a second electrical terminal configured to receive the blade when in the closed position, the second electrical terminal including a vacuum interrupter, wherein the vacuum interrupter engages the rod when in the closed position. Rotating the first electrical terminal in a first direction causes the blade to disengage from the second electrical terminal at a first point, and further rotating the first electrical terminal in the first direction causes the rod to disengage from the vacuum interrupter at a second point.

Abstract: The present disclosure provides a method for processing data by an edge node including: receiving a data request from an application; confirming whether first data corresponding to the data request is included in a content storage of the edge node; confirming whether there is second data having a correlation with the first data which is equal to or higher than a predetermined threshold value based on a previously stored mapping table when the first data is not included in the content storage of the edge node; and transmitting the second data to the application when there is the second data having the correlation with the first data which is equal to or higher than the threshold value.

Abstract: An electrical box cover including a base having a back wall perimetrically bounded by an upwardly extending side wall. The back wall having an opening for receiving an electrical device. A lid pivotally connected to the base. The lid having a lid plate with an opening that is defined by a collar. A housing having a front wall and a plurality of contiguous side walls extending therefrom to a distal edge to define a housing interior. The housing has a flange extending from the side walls and is slidably disposed in the lid opening and moveable between a retracted and extended position with respect to the collar. A plurality of lugs can extend inwardly from the collar and the flange engages the lugs when the housing is in the extended position.

Abstract: A semiconductor device comprising a pn junction diode and a method of making the same. The device includes a semiconductor substrate having a first conductivity type. The device also includes a buried oxide layer located in the substrate. The device further includes a semiconductor region having a second conductivity type extending beneath the buried oxide layer to form a pn junction with a semiconductor region having the first conductivity type. The pn junction is located beneath the buried oxide layer and extends substantially orthogonally with respect to a major surface of the substrate. The device also includes a field plate electrode comprising a semiconductor region located above the buried oxide layer for modifying an electric field at the pn junction by application of a potential to the field plate electrode.