Abstract: An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Abstract: An electronic device is disclosed. The electronic device includes: a first electrode disposed on a substrate and extending in a first direction; a second electrode disposed above the first electrode and extending in a second direction intersecting the first direction; and at least one switching particle disposed between the first electrode and the second electrode and bonded to the first electrode and the second electrode via van der Waals bond, wherein the switching particle controls flow of current between the first electrode and the second electrode, based on a difference of voltages of the first electrode and the second electrode applied thereto.

Abstract: An electronic device is disclosed. The electronic device includes: a first electrode disposed on a substrate and extending in a first direction; a second electrode disposed above the first electrode and extending in a second direction intersecting the first direction; and at least one switching particle disposed between the first electrode and the second electrode and bonded to the first electrode and the second electrode via van der Waals bond, wherein the switching particle controls flow of current between the first electrode and the second electrode, based on a difference of voltages of the first electrode and the second electrode applied thereto.

Abstract: An electric field variable gas sensor includes a semiconductor substrate, an insulating film disposed on the semiconductor substrate, a semiconductor thin film material disposed on a part of the semiconductor substrate and a part of the insulating film, a gas molecule adsorption inducing material disposed on the semiconductor thin film material, a first electrode disposed on the semiconductor substrate to be spaced apart from the semiconductor thin film material, and a second electrode disposed on the insulating film to be connected with the semiconductor thin film material.

Abstract: Provided is a memristor including an active electrode made of a first conductive material including an active metal; an inert electrode spaced from and facing toward the active electrode and made of a second conductive material having an ionization energy greater than the ionization energy of the first conductive material; and a resistive switching layer including: a porous insulating layer disposed between the active electrode and the inert electrode, wherein the porous insulating layer has through-channel holes defined therein extending from a bottom face to a top face thereof; and conductive filaments respectively formed inside the through-channel holes.