Patents by Inventor Thanh Nghia Tu

Thanh Nghia Tu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
    Patent number: 8358458
    Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
    Type: Grant
    Filed: November 4, 2010
    Date of Patent: January 22, 2013
    Assignee: QUALCOMM MEMS Technologies, Inc.
    Inventors: James Randolph Webster, Thanh Nghia Tu, Xiaoming Yan, Wonsuk Chung
  • Eliminate release etch attack by interface modification in sacrificial layers
    Patent number: 8222066
    Abstract: Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.
    Type: Grant
    Filed: April 2, 2008
    Date of Patent: July 17, 2012
    Assignee: Qualcomm Mems Technologies, Inc.
    Inventors: Thanh Nghia Tu, Qi Luo, Chia Wei Yang, David Heald, Evgeni Gousev, Chih-Wei Chiang
  • LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES
    Publication number: 20110051224
    Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
    Type: Application
    Filed: November 4, 2010
    Publication date: March 3, 2011
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: James Randolph Webster, Thanh Nghia Tu, Xiaoming Yan, Wonsuk Chung
  • Low temperature amorphous silicon sacrificial layer for controlled adhesion in MEMS devices
    Patent number: 7851239
    Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
    Type: Grant
    Filed: June 5, 2008
    Date of Patent: December 14, 2010
    Assignee: Qualcomm MEMS Technologies, Inc.
    Inventors: James Randolph Webster, Thanh Nghia Tu, Xiaoming Yan, Wonsuk Chung
  • LOW TEMPERATURE AMORPHOUS SILICON SACRIFICIAL LAYER FOR CONTROLLED ADHESION IN MEMS DEVICES
    Publication number: 20090305010
    Abstract: Methods of fabricating an electromechanical systems device that mitigate permanent adhesion, or stiction, of the moveable components of the device are provided. The methods provide an amorphous silicon sacrificial layer with improved and reproducible surface roughness. The amorphous silicon sacrificial layers further exhibit excellent adhesion to common materials used in electromechanical systems devices.
    Type: Application
    Filed: June 5, 2008
    Publication date: December 10, 2009
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: James Randolph Webster, Thanh Nghia Tu, Xiaoming Yan, Wonsuk Chung
  • ELIMINATE RELEASE ETCH ATTACK BY INTERFACE MODIFICATION IN SACRIFICIAL LAYERS
    Publication number: 20080311690
    Abstract: Methods of making a microelectromechanical system (MEMS) device are described. In some embodiments, the method includes forming a sacrificial layer over a substrate, treating at least a portion of the sacrificial layer to form a treated sacrificial portion, forming an overlying layer over at least a part of the treated sacrificial portion, and at least partially removing the treated sacrificial portion to form a cavity situated between the substrate and the overlying layer, the overlying layer being exposed to the cavity.
    Type: Application
    Filed: April 2, 2008
    Publication date: December 18, 2008
    Applicant: QUALCOMM MEMS Technologies, Inc.
    Inventors: Thanh Nghia Tu, Qi Luo, Chia Wei Yang, David Heald, Evgeni Gousev, Chih-Wei Chiang