Publication number: 20230027086
Abstract: A spin-orbit torque (SOT) magnetic tunnel junction (MTJ) device includes a substrate, a seed layer over the substrate, and a bismuth antimony (BiSb) layer having (0120) orientation on the seed layer. The seed layer includes a silicide layer and a surface control layer. The silicide layer includes a material of NiSi, NiFeSi, NiFeTaSi, NiCuSi, CoSi, CoFeSi, CoFeTaSi, CoCuSi, or combinations thereof. The surface control layer includes a material of NiFe, NiFeTa, NiTa, NiW, NiFeW, NiCu, NiCuM, NiFeCu, CoTa, CoFeTa, NiCoTa, Co, CoM, CoNiM, CoNi, NiSi, CoSi, NiCoSi, Cu, CuAgM, CuM, or combinations thereof, in which M is Fe, Cu, Co, Ta, Ag, Ni, Mn, Cr, V, Ti, or Si.
Type:
Application
Filed:
September 28, 2022
Publication date:
January 26, 2023
Applicant:
Western Digital Technologies, Inc.
Inventors:
Quang LE, Cherngye HWANG, Brian R. YORK, Andrew CHEN, Thao A. NGUYEN, Yongchul AHN, Xiaoyong LIU, Hongquan JIANG, Zheng GAO, Kuok San HO