Patents by Inventor Thao John Pham

Thao John Pham has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7454828
    Abstract: A method for measuring recession in a wafer undergoing an asymmetrical ion mill process. The method includes the formation of first and second reference features and possibly a dummy feature. The reference features are constructed such that the location of the midpoint between them is unaffected by the asymmetrical ion mill. By measuring the distance between a portion of the dummy feature and the midpoint between the reference features, the amount of recession of the dummy feature can be measured. The measurement can be used to calculate the relative location of the flare to the read sensor rear edge through overlay information. By keeping the angles of the sides of the features steep (ie. nearly parallel with the direction in which the ion mill is asymmetrical) the amount of material consumed on each of the reference features is substantially equal and the midpoint between the reference features is substantially stationary.
    Type: Grant
    Filed: November 23, 2005
    Date of Patent: November 25, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham
  • Patent number: 7323350
    Abstract: A method of making and using thin film calibration features is described. To fabricate a calibration standard according to the invention raised features are first formed from an electrically conductive material with a selected atomic number. A conformal thin film layer is deposited over the exposed sidewalls of the raised features. The sidewall material is selected to have a different atomic number and is preferably an nonconductive such as silicon dioxide or alumina. After the nonconductive material deposition, a controlled directional RIE process is used to remove the insulator layer deposited on the top and bottom surface of the lines and trenches. The remaining voids between the sidewalls of the raised features are filled with a conductive material. The wafer is then planarized with chemical mechanical planarization (CMP) to expose the nonconductive sidewall material on the surface. The nonconductive sidewall material will be fine lines embedded in conductive material.
    Type: Grant
    Filed: September 30, 2004
    Date of Patent: January 29, 2008
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Sukhbir Singh Dulay, Justin Jia-Jen Hwu, Thao John Pham
  • Patent number: 6804878
    Abstract: A method is provided of smoothing the perturbations on a surface, in particular the surface of a magnetic head slider, the method comprising several steps. At least one air-bearing surface to be smoothed is exposed to an ion species generated from a defined source to form a beam of incident radiation. The beam has a linear axis emanating from the source and thus forms an angle of incident radiation with respect to the surface to be smoothed. The at least one surface is smoothed by exposing the surface(s) to be smoothed to the beam of incident radiation, where the angle of incident radiation is less than 90° relative to a vertical axis drawn perpendicular to the surface to be smoothed. To make a corrosion resistant magnetic head slider, the method further comprises coating the smoothed surface with a layer of amorphous carbon.
    Type: Grant
    Filed: December 21, 1999
    Date of Patent: October 19, 2004
    Assignee: Hitachi Global Storage Technologies Netherlands B.V.
    Inventors: Richard Thomas Campbell, Richard Hsiao, Yiping Hsiao, Son Van Nguyen, Thao John Pham