Abstract: An exemplary embodiment of the present disclosure provides a method of fabricating a semiconductor device, comprising: providing a substrate, the substate comprising a base layer and two or more planar heteroepitaxial layers deposited on the base layer, the two or more heteroepitaxial layers comprising a first epitaxial layer having a first lattice constant and a second epitaxial layer having a second lattice constant different than the first lattice constant; etching the substrate to form one or more mesas; and depositing one or more non-planar overgrowth layers on the etched substrate.

Abstract: Methods for wet-etching semiconductor samples and devices fabricated from the same are disclosed. The methods can be for selectively wet-etching a semiconductor sample comprising selecting a liquid-phase solution such that when the semiconductor sample is etched with the liquid-phase solution, at least a portion of one of a first doped region or a second doped region is etched at a greater rate than at least a portion of the other of the first doped region or the second doped region; and wet-etching, with the liquid-phase solution, the at least a portion of one of the first doped region or the second doped region at a first etch rate and the at least a portion of the other of the first doped region or the second doped region at a second etch rate; wherein the first etch rate can be greater than the second etch rate.

Abstract: Methods for wet-etching semiconductor samples and devices fabricated from the same are disclosed. The methods can be for selectively wet-etching a semiconductor sample comprising selecting a liquid-phase solution such that when the semiconductor sample is etched with the liquid-phase solution, at least a portion of one of a first doped region or a second doped region is etched at a greater rate than at least a portion of the other of the first doped region or the second doped region; and wet-etching, with the liquid-phase solution, the at least a portion of one of the first doped region or the second doped region at a first etch rate and the at least a portion of the other of the first doped region or the second doped region at a second etch rate; wherein the first etch rate can be greater than the second etch rate.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

Abstract: A semiconductor device is disclosed. The semiconductor device includes a substrate comprising a groove. A buffer layer is formed on a surface of the groove. The buffer layer comprising at least one material chosen from AIN, GaN or AlxGa1-xN, where x is between zero and one. An epitaxially grown semiconductor material is disposed over the buffer layer, at least a portion of the epitaxially grown semiconductor material having a cubic crystalline phase structure. Methods of forming the semiconductor devices are also taught.

Abstract: A method of providing a metal contact to n-type Gallium Nitride is disclosed. The method does not require high temperatures that often lead to a degradation of semiconductor materials, dielectric films, interfaces and/or metal-semiconductor junctions. The method can be applied at practically any step of a semiconductor device fabrication process and results in high quality ohmic contact with low contact resistance and high current handling capability. Present invention significantly simplifies the fabrication process of semiconductor devices, such as Gallium Nitride-based Light Emitting Diodes and Laser Diodes, while improving the resulting performance of the said devices. The invention can also be applied to improve the performance of electronic devices based on Gallium Nitride material system, especially where an additional annealing step is beneficial during the fabrication process.

Abstract: The non-polar or semi-polar Nitride film is grown using Metal Organic Vapor Phase Epitaxy over a substrate. The in-situ grown seed layer comprising Magnesium and Nitrogen is deposited prior to the Nitride film growth. The said seed layer enhances the crystal growth of the Nitride material and makes it suitable for electronics and optoelectronics applications. The use of non-polar and/or semi-polar epitaxial films of the Nitride materials allows avoiding the unwanted effects related to polarization fields and associated interface and surface charges, thus significantly improving the semiconductor device performance and efficiency. In addition, the said seed layer is also easily destroyable by physical or chemical stress, including the ability to dissolve in water or acid, which makes the substrate removal process available and easy.

Abstract: The current invention introduces a method of crystal film's growth of Gallium Nitride and related alloys over a novel class of the substrates using Vapor Phase Epitaxy technique. This said novel class of the substrates comprises single crystal lattice matched, partially matched or mismatched metallic substrates. The use of such substrates provides exceptional thermal conductivity and application flexibility, since they can be easily removed or patterned by chemical etching for the purposes of additional contact formation, electromagnetic radiation extraction, packaging or other purposes suggested or discovered by the skilled artisan. In particular, if patterned, the remaining portions of the said substrates can be utilized as contacts to the semiconductor layers grown on them. In addition, the said metallic substrates are significantly more cost effective than most of the conventional substrates.

Abstract: The current invention introduces a semiconductor light emitting device mounted in a free-standing way for enhanced light extraction and handling simplicity. The free-standing mount is based on the mechanical strength of the current carrying connectors, such as wires or bonds. Such mounted LED die can be placed into standard light bulb body for compatibility with existing household, car, consumer electronics or industrial light sources. The current invention provides increased light extraction efficiency which makes general LED lighting simpler and cheaper. The mounting into a conventional light bulb provides the consumer with the ease of handling and mounting.

Abstract: A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n?1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

Abstract: A monolithic, multi-color semiconductor light emitting diode (LED) is formed with a multi-bandgap, multi-quantum well (MQW) active light emitting region which emits light at spaced-apart wavelength bands or regions ranging from UV to red. The MQW active light emitting region comprises a MQW layer stack including n quantum barriers which space apart n?1 quantum wells. Embodiments include those wherein the MQW layer stack includes quantum wells of at least two different bandgaps for emitting light of two different wavelengths, e.g., in the blue or green regions and in at least one other region, and the intensities of the emissions are adjusted to provide a preselected color of combined light emission, preferably white light.

Abstract: A nitrogen-group III compound semiconductor satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0, and a method for producing the same comprising the steps of forming a zinc oxide (ZnO) intermediate layer on a sapphire substrate, forming a nitrogen-group III semiconductor layer satisfying the formula Al.sub.x Ga.sub.y In.sub.1-x-y N, inclusive of x=0, y=0 and x=y=0 on the intermediate ZnO layer, and separating the intermediate ZnO layer by wet etching with an etching liquid only for the ZnO layer.