Abstract: Vapor deposition precursors that can deposit conformal thin ruthenium films on substrates with a very high growth rate, low resistivity and low levels of carbon, oxygen and nitrogen impurities have been provided. The precursors described herein include a compound having the formula CMC?, wherein M comprises a metal or a metalloid; C comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; and C? comprises a substituted or unsubstituted acyclic alkene, cycloalkene or cycloalkene-like ring structure; wherein at least one of C and C? further and individually is substituted with a ligand represented by the formula CH(X)R1, wherein X is a N, P, or S-substituted functional group or hydroxyl, and R1 is hydrogen or a hydrocarbon. Methods of production of the vapor deposition precursors and the resulting films, and uses and end uses of the vapor deposition precursors and resulting films are also described.