Patents by Inventor Theo Panagopoulos
Theo Panagopoulos has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210104414Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.Type: ApplicationFiled: November 24, 2020Publication date: April 8, 2021Applicant: Lam Research CorporationInventors: Theo Panagopoulos, Andreas Fischer, Thorsten Lill
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Patent number: 10665435Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: GrantFiled: August 12, 2019Date of Patent: May 26, 2020Assignee: Lam Research CorporationInventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Publication number: 20190371579Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: ApplicationFiled: August 12, 2019Publication date: December 5, 2019Inventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Patent number: 10395902Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: GrantFiled: July 18, 2018Date of Patent: August 27, 2019Assignee: Lam Research CorporationInventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Publication number: 20180323044Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: ApplicationFiled: July 18, 2018Publication date: November 8, 2018Inventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Patent number: 10049862Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: GrantFiled: March 11, 2016Date of Patent: August 14, 2018Assignee: Lam Research CorporationInventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Publication number: 20180204738Abstract: Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses are capable of forming a pressure differential between an upper chamber region and lower chamber region by varying the position of the movable pedestal. Apparatuses also include a sidewall region adjacent to the showerhead such that an adjustable gap is formed between an edge of the movable pedestal and the sidewall region, the distance of which can be varied to form a pressure differential.Type: ApplicationFiled: March 15, 2018Publication date: July 19, 2018Inventors: Meihua Shen, Shuogang Huang, Thorsten Lill, Theo Panagopoulos
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Patent number: 9953843Abstract: Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses may be suitable for etching non-volatile metals using a treatment while the movable pedestal is in the lowered position and a high pressure exposure to organic vapor while the movable pedestal is in the raised position.Type: GrantFiled: February 5, 2016Date of Patent: April 24, 2018Assignee: Lam Research CorporationInventors: Meihua Shen, Shuogang Huang, Thorsten Lill, Theo Panagopoulos
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Publication number: 20170229317Abstract: Apparatuses suitable for etching substrates at various pressure regimes are described herein. Apparatuses include a process chamber including a movable pedestal capable of being positioned at a raised position or a lowered position, showerhead, and optional plasma generator. Apparatuses may be suitable for etching non-volatile metals using a treatment while the movable pedestal is in the lowered position and a high pressure exposure to organic vapor while the movable pedestal is in the raised position.Type: ApplicationFiled: February 5, 2016Publication date: August 10, 2017Inventors: Meihua Shen, Shuogang Huang, Thorsten Lill, Theo Panagopoulos
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Patent number: 9679751Abstract: A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.Type: GrantFiled: March 15, 2012Date of Patent: June 13, 2017Assignee: LAM RESEARCH CORPORATIONInventors: Jon McChesney, Theo Panagopoulos, Alex Paterson, Craig Blair
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Publication number: 20160307743Abstract: A plasma chamber is provided to increase conductance within the plasma chamber and to increase uniformity of the conductance. A radio frequency (RF) path for supplying power to the plasma chamber is symmetric with respect to a center axis of the plasma chamber. Moreover, pumps used to remove materials from the plasma chamber are located symmetric with respect to the center axis. The symmetric arrangements of the RF paths and the pumps facilitate an increase in conductance uniformity within the plasma chamber.Type: ApplicationFiled: March 11, 2016Publication date: October 20, 2016Inventors: Daniel Arthur Brown, John Patrick Holland, Michael C. Kellogg, James E. Tappan, Jerrel K. Antolik, Ian Kenworthy, Theo Panagopoulos, Zhigang Chen
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Patent number: 9011631Abstract: An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support.Type: GrantFiled: February 2, 2012Date of Patent: April 21, 2015Assignee: Lam Research CorporationInventor: Theo Panagopoulos
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Publication number: 20130244440Abstract: A chamber filler kit for an inductively coupled plasma processing chamber in which semiconductor substrates are processed by inductively coupling RF energy through a window facing a substrate supported on a cantilever chuck. The kit includes at least one chamber filler which reduces the lower chamber volume in the chamber below the chuck. The fillers of the kit can be mounted in a standard chamber having a chamber volume of over 60 liters and by using different sized chamber fillers it is possible to reduce the chamber volume to provide desired gas flow conductance and accommodate changes in vacuum pressure during processing of the substrate. The chamber filler kit can be used to modify a standard chamber to accommodate different processing regimes such as rapid alternating processes wherein wide pressure changes are needed without varying a gap between the substrate and the window.Type: ApplicationFiled: March 15, 2012Publication date: September 19, 2013Applicant: Lam Research CorporationInventors: Jon McChesney, Theo Panagopoulos, Alex Paterson, Craig Blair
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Publication number: 20120156880Abstract: An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support.Type: ApplicationFiled: February 2, 2012Publication date: June 21, 2012Applicant: Lam Research CorporationInventor: Theo Panagopoulos
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Patent number: 8133349Abstract: An inductively coupled plasma processing apparatus includes a processing chamber in which a semiconductor substrate is processed, a substrate support, a dielectric window forming a wall of the chamber, an antenna operable to generate and maintain a plasma in the processing chamber, and a showerhead plate of dielectric material adjacent the dielectric window. The showerhead plate includes gas holes in fluid communication with a plenum below the dielectric window, the plenum having a gas volume of no greater than 500 cm3. The gas holes extend between the plenum and a plasma exposed surface of the showerhead plate and the gas holes have an aspect ratio of at least 2. A gas delivery system is operable to supply an etching gas and a deposition gas into the processing chamber through the showerhead plate while the semiconductor substrate is supported on the substrate support.Type: GrantFiled: November 3, 2010Date of Patent: March 13, 2012Assignee: Lam Research CorporationInventor: Theo Panagopoulos