Abstract: Disclosed is a biphasic electrically conductive perovskite-based mixed oxide of the structure ABO3 with A=Ba, and B=Co, comprising additionally 5-45 at %, preferably 15 to 30 at %, particularly preferably 25 at % Co3O4 (at % Co based on the total number of Co atoms in the perovskite ABO3 and 0.5 to 0.3 at %, preferably 1 to 2.5 at %, particularly preferably 2 at % (wherein the at % are referred to the total number of B cations in the perovskite ABO3) Ti as dopant. Preferably, the mixed oxide has the stoichiometric formula BaCo1?xTixO3??:Co3O4 with x=0.005 to 0.03, preferably x=0.01 to 0.025, particularly preferably x=0.02, wherein ? defines the vacancies in the perovskite structure and is in the range of about 0.1 to 0.8, preferably 0.3 to 0.7, particularly preferably about 0.5 to 0.6.

Abstract: A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

Abstract: Disclosed is a biphasic electrically conductive perovskite-based mixed oxide of the structure ABO3 with A=Ba, and B=Co, comprising additionally 5-45 at %, preferably 15 to 30 at %, particularly preferably 25 at % Co3O4 (at % Co based on the total number of Co atoms in the perovskite ABO3 and 0.5 to 3 at %, preferably 1 to 2.5 at %, particularly preferably 2 at % (wherein the at % are referred to the total number of B cations in the perovskite ABO3) Ti as dopant. Preferably, the mixed oxide has the stoichiometric formula BaCo1?xTixO3??:Co3O4 with x=0.005 to 0.03, preferably x=0.01 to 0.025, particularly preferably x=0.02, wherein ? defines the vacancies in the perovskite structure and is in the range of about 0.1 to 0.8, preferably 0.3 to 0.7, particularly preferably about 0.5 to 0.6.

Abstract: A method of manufacturing a ferroelectric element includes forming an insulating film on one side of a metal substrate by an electron beam (EB) vapor deposition method or a sputtering method; forming a metal film on the insulating film by the sputtering method; and forming a ferroelectric film on the metal film by a sol-gel method. The metal substrate includes iron (Fe) and nickel (Ni), and a content of the nickel (Ni) is greater than or equal to 30% and less than or equal to 40%.

Abstract: A high-temperature superconducting thin-film strip conductor (HTSL-CC) includes a metal substrate, a buffer layer chemically generated thereon and grown crystallographically unrotated in relation to the metal substrate, and a chemically generated superconducting coating thereon. The HTSL-CC possesses high texturing of the buffer layer since the metal substrate has a surface roughness RMS<50 nm, and since and the buffer layer is grown directly onto its surface, without an intermediate layer, crystallographically unrotated in relation to the crystalline structure of the metal substrate.