Patents by Inventor Theodor Walter Loeliger

Theodor Walter Loeliger has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor devices
    Patent number: 10861889
    Abstract: A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.
    Type: Grant
    Filed: January 16, 2017
    Date of Patent: December 8, 2020
    Assignee: ams Sensors Singapore Pte. Ltd.
    Inventors: Bernhard Buettgen, Gözen Köklü, Theodor Walter Loeliger
  • SEMICONDUCTOR DEVICES
    Publication number: 20190027516
    Abstract: A semiconductor device operable to demodulate incident modulated electromagnetic radiation, the semiconductor device comprising: a pinned photodiode structure including a substrate of a first type, an implant layer of a second type disposed within the substrate, first and second auxiliary implant layers of the second type disposed within the substrate and each disposed adjacent to the implant layer of the second type, an implant layer of the first type disposed within the implant layer of the second type and extending into the first and second auxiliary implant layers of the second type, an insulator disposed on a surface of the substrate, and a photo-detection region; first and second transfer gates disposed on a surface of the insulator, the transfer gates being operable to generate a field within the substrate; and first and second floating diffusion implant layers of the second type disposed within the substrate.
    Type: Application
    Filed: January 16, 2017
    Publication date: January 24, 2019
    Inventors: Bernhard Buettgen, Gözen Köklü, Theodor Walter Loeliger