Abstract: Methods and apparatus for vacuum forming a beverage carrier yoke are described. The yoke comprises a number (e.g., four or six) collars interconnected by a web, and each collar exhibits dimensions—including a nominal diameter and a substantially uniform thickness—selected to improve strength and increase comfort. The yoke is produced using a slurry comprising a moisture barrier and a fiber base.

Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, wherein at least a portion of the electron blocking layer is arranged to have a tensile strain, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.

Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer. The active layer may include a first barrier layer arranged to have a tensile strain, a second barrier layer arranged to have a tensile strain, and a first well layer disposed between the first barrier layer and the second barrier layer. The active layer may also include a first unstrained barrier layer, a second unstrained barrier layer, and a second well layer disposed between the first unstrained barrier layer and the second unstrained barrier layer.

Abstract: A light-emitting device is disclosed. The light emitting device includes an electron blocking layer, a hole blocking layer, wherein at least a portion of the hole blocking layer is arranged to have a compressive strain, and an active layer disposed between the hole blocking layer and the electron blocking layer.

Abstract: A device includes a semiconductor structure comprising a III-P light emitting layer disposed between an n-type region and a p-type region. The n-type region includes a superlattice. The superlattice includes a plurality of stacked layer pairs, each layer pair including a first layer and a second layer. The first layer has a smaller aluminum composition than the second layer.

Abstract: A method for fabricating an epitaxial structure includes providing a substrate (102, 202, 302, 402) and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack (134) on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack (134) includes an n-type GaN layer (136) over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure (138) over the n-type GaN layer, a p-type AIGaN layer (140) over the n-type GaN/InGaN MQW structure, and a p-type GaN layer (142) over the p-type AIGaN layer.

Abstract: A method for fabricating an epitaxial structure includes providing a substrate (102, 202, 302, 402) and a heterojunction stack on a first side the substrate, and forming a GaN light emitting diode stack (134) on a second side of the substrate. The heterojunction stack includes an undoped gallium nitride (GaN) layer and a doped aluminum gallium nitride (AIGaN) layer on the undoped GaN layer. The GaN light emitting diode stack (134) includes an n-type GaN layer (136) over the substrate, a GaN/indium gallium nitride (InGaN) multiple quantum well (MQW) structure (138) over the n-type GaN layer, a p-type AIGaN layer (140) over the n-type GaN/InGaN MQW structure, and a p-type GaN layer (142) over the p-type AIGaN layer.

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1?x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1?x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

Abstract: An improved method and apparatus for respiratory audio-visual biofeedback are disclosed. A guide patterned after a breathing cycle comfortable to the patient serves as a target. The target is displayed as a bar moving vertically upward during inhale and vertically downward during exhale, between fixed end ex-hale and end in-hale limits. The patient's current respiratory position is also displayed as a bar, oriented parallel to the target bar so that the difference between the current position and the target position is easy for the patient to see.

Abstract: A device includes a semiconductor structure with at least one III-P light emitting layer disposed between an n-type region and a p-type region. The semiconductor structure further includes a GaAsxP1-x p-contact layer, wherein x<0.45. A first metal contact is in direct contact with the GaAsxP1-x p-contact layer. A second metal contact is electrically connected to the n-type region. The first and second metal contacts are formed on a same side of the semiconductor structure.

Abstract: An improved method and apparatus for respiratory audio-visual biofeedback are disclosed. A guide patterned after a breathing cycle comfortable to the patient serves as a target. The target is displayed as a bar moving vertically upward during inhale and vertically downward during exhale, between fixed end ex-hale and end in-hale limits. The patient's current respiratory position is also displayed as a bar, oriented parallel to the target bar so that the difference between the current position and the target position is easy for the patient to see.