Abstract: A method of process variation compensation in step-and-scan lithography which comprises estimating a magnitude of a process error over a full imaged substrate surface and applying error correction during scan exposure over the full imaged substrate surface is provided in the disclosed embodiments.

Abstract: Embodiments of the present invention form a weight-compensating/tuning layer on a structure (e.g., a silicon wafer with one or more layers of material (e.g., films)) having variations in its surface topology. The variations in surface topology take the form of thick and thin regions of materials. The weight-compensating/tuning layer includes narrow and wide regions corresponding to the thick and thin regions, respectively.

Abstract: Multiple FBARs may be manufactured on a single wafer and later diced. Ideally, all devices formed in a wafer would have the same resonance frequency. However, due to manufacturing variances, the frequency response of the FBAR devices may vary slightly across the wafer. An RF map may be created to determine zones over the wafer where FBARs in that zone all vary from a target frequency by a similar degree. A tuning layer may be deposited over the wafer. Lithographically patterned features to the tuning layer based on the zones identified by the RF map may be used to correct the FBARs to a target resonance frequency with the FBARs still intact on the wafer.

Abstract: In an embodiment in accordance with the present invention, methods for dynamic detection and correction of focus and tilt variations that occur during a specific product layer exposure is by focus and tilt pre-compensation during wafer exposure. The method provides two spaced apart paths that provide both defocus and tilt measurements. A reference plane is defined by using three reference areas or fields. The data is fitted, using least squares or max/min error, to a “plane”, that is, to straight equidistant lines, the deviation from “plane” is computed as error from a set of straight equidistant lines. Lateral displacements of each band into focus error is converted using the formula: ?Z=?X*?.

Abstract: A method of process variation compensation in step-and-scan lithography which comprises estimating a magnitude of a process error over a full imaged substrate surface and applying error correction during scan exposure over the full imaged substrate surface is provided in the disclosed embodiments.

Abstract: Embodiments of the present invention form a weight-compensating/tuning layer on a structure (e.g., a silicon wafer with one or more layers of material (e.g., films)) having variations in its surface topology. The variations in surface topology take the form of thick and thin regions of materials. The weight-compensating/tuning layer includes narrow and wide regions corresponding to the thick and thin regions, respectively.

Abstract: In an embodiment in accordance with the present invention, methods for dynamic detection and correction of focus and tilt variations that occur during a specific product layer exposure is by focus and tilt pre-compensation during wafer exposure. The method provides two spaced apart paths that provide both defocus and tilt measurements. A reference plane is defined by using three reference areas or fields. The data is fitted, using least squares or max/min error, to a “plane”, that is, to straight equidistant lines, the deviation from “plane” is computed as error from a set of straight equidistant lines. Lateral displacements of each band into focus error is converted using the formula: &Dgr;Z=&Dgr;X*&thgr;.