Abstract: A 3-D printed device comprising one or more structures, the structures comprising a plurality of magnetically responsive particles and one or more diblock or triblock copolymers; the diblock or triblock copolymers having an A-B, A-B-A, or A-B-C block-type structure in which the A-blocks and C-blocks are an aromatic-based polymer or an acrylate-based polymer and the B-blocks are an aliphatic-based polymer. These 3-D printed devices may be formed using a method that comprises providing a magnetic ink composition; applying the magnetic ink composition to a substrate in a 3-D solvent cast printing process to form one or more structures; and drying the one or more structures formed from the magnetic ink composition. The dried structures can exhibit one or more regions of magnetic permeability greater than 1.3×10?6 H/m.

Abstract: A 3-D printed device comprising one or more interconnect structures, the interconnect structures comprising a plurality of conductive particles and one or more diblock or triblock copolymers; the diblock or triblock copolymers having an A-B, A-B-A, or A-B-C block-type structure in which the A-blocks and C-blocks are an aromatic-based polymer or an acrylate-based polymer and the B-blocks are an aliphatic-based polymer. These 3-D printed devices may be formed using a method that comprises providing a conductive ink composition; applying the conductive ink composition to a substrate in a 3-D solvent cast printing process to form one or more interconnect structures; and drying the one or more interconnect structures formed from the conductive ink composition. The dried interconnect structures exhibit a conductivity equal to or greater than 1×105 S/m without having to be subjected to any post-processing sintering treatment.

Abstract: An ink formulation for 3D printing comprises a triblock copolymer in a solvent, where the triblock copolymer includes end blocks comprising an aromatic or acrylate polymer and a midblock between the end blocks comprising an aliphatic polymer. The ink formulation exhibits a shear thinning threshold of about 0.02 rad/sec or less. A method of making a 3D printed radiofrequency (RF) device comprises extruding an ink formulation from a deposition nozzle moving relative to a substrate, where the ink formulation comprises a triblock copolymer in a solvent and the triblock copolymer includes end blocks comprising an aromatic or acrylate polymer and a midblock between the end blocks comprising an aliphatic polymer. One or more continuous filaments comprising the ink formulation are deposited in a predetermined pattern on the substrate, and the ink formulation is treated to remove or cure the solvent, thereby forming a printed RF device.

Abstract: A 3-D printed device comprising one or more structures, the structures comprising a plurality of magnetically responsive particles and one or more diblock or triblock copolymers; the diblock or triblock copolymers having an A-B, A-B-A, or A-B-C block-type structure in which the A-blocks and C-blocks are an aromatic-based polymer or an acrylate-based polymer and the B-blocks are an aliphatic-based polymer. These 3-D printed devices may be formed using a method that comprises providing a magnetic ink composition; applying the magnetic ink composition to a substrate in a 3-D solvent cast printing process to form one or more structures; and drying the one or more structures formed from the magnetic ink composition. The dried structures can exhibit one or more regions of magnetic permeability greater than 1.3×10?6 H/m.

Abstract: A 3-D printed device comprising one or more interconnect structures, the interconnect structures comprising a plurality of conductive particles and one or more diblock or triblock copolymers; the diblock or triblock copolymers having an A-B, A-B-A, or A-B-C block-type structure in which the A-blocks and C-blocks are an aromatic-based polymer or an acrylate-based polymer and the B-blocks are an aliphatic-based polymer. These 3-D printed devices may be formed using a method that comprises providing a conductive ink composition; applying the conductive ink composition to a substrate in a 3-D solvent cast printing process to form one or more interconnect structures; and drying the one or more interconnect structures formed from the conductive ink composition. The dried interconnect structures exhibit a conductivity equal to or greater than 1×105 S/m without having to be subjected to any post-processing sintering treatment.

Abstract: An ink formulation for 3D printing comprises a triblock copolymer in a solvent, where the triblock copolymer includes end blocks comprising an aromatic or acrylate polymer and a midblock between the end blocks comprising an aliphatic polymer. The ink formulation exhibits a shear thinning threshold of about 0.02 rad/sec or less. A method of making a 3D printed radiofrequency (RF) device comprises extruding an ink formulation from a deposition nozzle moving relative to a substrate, where the ink formulation comprises a triblock copolymer in a solvent and the triblock copolymer includes end blocks comprising an aromatic or acrylate polymer and a midblock between the end blocks comprising an aliphatic polymer. One or more continuous filaments comprising the ink formulation are deposited in a predetermined pattern on the substrate, and the ink formulation is treated to remove or cure the solvent, thereby forming a printed RF device.

Abstract: New compositions of matter and device constructs are disclosed in the form of diamond material layers or films having one or more surfaces treated with chemically active radicals, e.g., photo-radical or thermal-radical generators to reduce and stabilize their surface resistance. The compositions exhibit stable, markedly lower surface resistances, e.g., below about 3 k? sq?1 or between about 3 and 2 k? sq?1 or below 2 k? sq?1, or below 1 k? sq?1, or lower. In certain embodiments, the diamond material is a epitaxial layer grown on a substrate, e.g., by microwave plasma chemical vapor deposition (CVD) and can have a thickness ranging from about 1 nm to 1 mm, preferably from about 10 nm to 500 ?m, or from about 100 nm to 10 ?m. The invention also encompasses semiconductor devices fabricated from the surface-modified diamond materials disclosed herein.

Abstract: This invention relates to the preparation and purification of high-X (“chi”) diblock copolymers.

Abstract: Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air).

Abstract: Methods and compositions for enhancing the sensitivity of an inorganic resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material such as a hydrogen-bearing siloxane material) can be formulated with a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a radical generator, and can act to enhance the efficiency of radical generation and/or resist crosslinking when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput. Methods of utilizing one or more of these aspects are also disclosed.

Abstract: Methods and compositions for enhancing the sensitivity of a resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material) can be formulated with an acid generator and a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a compound with one or more silicon-silicon bonds, and can act to enhance the efficiency of acid generation when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput.

Abstract: Multi-tone resists can enhance the resolution limit of a lithographic process by advantageously using the changeable solubility of a resist composition as a function of lithographic radiation dosage. By imaging a multi-tone resist with different doses of lithographic radiation in a selected pattern, the pattern can be imparted to the resist upon subsequent development of the resist. In some aspects, a resist composition is utilized having an aliphatic polymer (e.g., a copolymer with fluoropolymer units and/or methacrylate units) with acid labile groups and a plurality of crosslinkable groups that can be crosslinked to other portions of the aliphatic polymer. Other components such as base generators and/or crosslinking agents can also be included. Such compositions can be useful in extending the resolution of UV lithographic radiation processes (e.g., wavelengths less than 200 nm). Other aspects of such compositions and methods are also discussed.

Abstract: Methods of directing assembly of materials using a surface-modified substrate are disclosed. A modified surface is created on a substrate by applying a first surface agent to the substrate. Energy is applied to the modified surface to form an imaged surface having an imaged portion and a non-imaged portion. The imaged portion is characterized by a surface energy that is different from the surface energy of the non-imaged portion. For example, the applied energy can remove at least a portion of an attached surface agent from the imaged portion to modify the surface energy. In some preferred embodiments the energy also modifies the surface agent without causing oxidation. To avoid oxidation, for example, the surface modification and/or energy appliement can take place in a low oxygen environment (e.g., having an oxygen content lower than that present in about 0.01 Torr of air).

Abstract: Compositions for use as immersion fluids are described. In general, the immersion fluids can be utilized to perform lithography at short wavelengths (e.g., in a range from about 120 nm to about 260 nm). Some embodiments can be used in a range of actinic radiation between about 140 nm and about 160 nm (e.g., about 157 nm). Immersion fluids can exhibit any number of advantageous features including a relatively high index of refraction (e.g., greater than about 1, or greater than about 1.3, or about greater than about 1.4) and/or a relatively low absorbance (e.g., lower than about 2 ?m?1, or lower than about 1 ?m?1, or lower than about 0.5 ?m?1). Some immersion fluids can include silicon-containing compounds and/or germanium containing compounds. Such compounds can include at least one Ge—O bond or at least one Si—O bond. Such compounds can also include one or more fluorinated moieties.

Abstract: Methods and compositions for enhancing the sensitivity of an inorganic resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material such as a hydrogen-bearing siloxane material) can be formulated with a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a radical generator, and can act to enhance the efficiency of radical generation and/or resist crosslinking when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput. Methods of utilizing one or more of these aspects are also disclosed.

Abstract: Methods and compositions for enhancing the sensitivity of a resist composition are disclosed. In one aspect, compositions for use with a matrix material (e.g., a lithographically sensitive polymeric material) can be formulated with an acid generator and a sensitizer, where the sensitizer can be present in a relatively small amount. The sensitizer can include a compound with one or more silicon-silicon bonds, and can act to enhance the efficiency of acid generation when the resist is impinged by a selected lithographic radiation. The methods of the present invention can be especially useful in performing short wavelength (e.g., less than 200 nm) lithography, or for processes such as e-beam lithography, which traditionally suffer from low throughput.

Abstract: Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.

Abstract: Multi-tone resists can enhance the resolution limit of a lithographic process by advantageously using the changeable solubility of a resist composition as a function of lithographic radiation dosage. By imaging a multi-tone resist with different doses of lithographic radiation in a selected pattern, the pattern can be imparted to the resist upon subsequent development of the resist. In some aspects, a resist composition is utilized having an aliphatic polymer (e.g., a copolymer with fluoropolymer units and/or methacrylate units) with acid labile groups and a plurality of crosslinkable groups that can be crosslinked to other portions of the aliphatic polymer. Other components such as base generators and/or crosslinking agents can also be included. Such compositions can be useful in extending the resolution of UV lithographic radiation processes (e.g., wavelengths less than 200 nm). Other aspects of such compositions and methods are also discussed.

Abstract: A surface-emission cathode formed on an insulating surface having cantilevered, i.e. “undercut,” electrodes. Suitable insulating surfaces include negative electron affinity (NEA) insulators such as glass or diamond. The cathode can operate in a comprised vacuum (e.g., 10?7 Torr) with no bias on the electrodes and low vacuum electric fields (e.g., at least 10 V cm?1). Embodiments of the present invention are inexpensive to fabricate, requiring lithographic resolution of approximately 10 micrometers. These cathodes can be formed over large areas for use in lighting and displays and are suitable for satellite applications, such as cathodes for tethers, thrusters and space-charging neutralizers.

Abstract: Contrast enhancing layers and other materials that can be used as a conformal mask over a photoresist are discussed. In particular, methods and compositions are discussed that can be advantageous when performing lithography using short wavelength actinic radiation (e.g., wavelengths below 200 nm, such as 193 nm or 157 nm). For example, contrast enhancing layers that include an organosilicon containing material can be used to enhance the contrast of a pattern formed on an underlying photoresist layer. Silicon containing polymers, oligomers, and other non-polymeric materials can be used as effective CEL materials.