Abstract: Provided herein are compounds that are useful in the treatment of pain in a subject.

Abstract: Provided herein are compounds that are useful in the treatment of pain in a subject.

Abstract: The present invention provides compounds useful for the treatment of opioid dependence, alcohol dependence, alcohol use disorder, or the prevention of relapse to opioid dependence in a subject in need thereof. Related pharmaceutical compositions and methods are also provided herein.

Abstract: The present invention provides compounds useful for the treatment of opioid dependence, alcohol dependence, alcohol use disorder, or the prevention of relapse to opioid dependence in a subject in need thereof. Related pharmaceutical compositions and methods are also provided herein.

Abstract: Provided herein are compounds that are useful in the treatment of pain in a subject.

Abstract: Provided herein are compounds that are useful in the treatment of pain in a subject.

Abstract: Provided herein are compounds that are useful in the treatment of pain in a subject.

Abstract: An epitaxial growth system comprises a housing around an epitaxial growth chamber. A substrate support is located within the growth chamber. A gallium source introduces gallium into the growth chamber and directs the gallium towards the substrate. An activated nitrogen source introduces activated nitrogen into the growth chamber and directs the activated nitrogen towards the substrate. The activated nitrogen comprises ionic nitrogen species and atomic nitrogen species. An external magnet and/or an exit aperture control the amount of atomic nitrogen species and ionic nitrogen species reaching the substrate.

Abstract: A semiconductor sensor, solar cell or emitter, or a precursor therefor, has a substrate and one or more textured semiconductor layers deposited onto the substrate. The textured layers enhance light extraction or absorption. Texturing in the region of multiple quantum wells greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. Electroluminescence of LEDs of the invention is dichromatic, and results in variable color LEDs, including white LEDs, without the use of phosphor.

Abstract: An etched grooved GaN-based permeable-base transistor structure is disclosed, along with a method for fabrication of same.

Abstract: A semiconductor sensor, solar cell or emitter or a precursor therefore having a substrate and textured semiconductor layer deposited onto the substrate. The layer can be textured as grown on the substrate or textured by replicating a textured substrate surface. The substrate or first layer is then a template for growing and texturing other semiconductor layers from the device. The textured layers are replicated to the surface from the substrate to enhance light extraction or light absorption. Multiple quantum wells, comprising several barrier and quantum well layers, are deposited as alternating textured layers. The texturing in the region of the quantum well layers greatly enhances internal quantum efficiency if the semiconductor is polar and the quantum wells are grown along the polar direction. This is the case in nitride semiconductors grown along the polar [0001] or [000-1] directions.

Abstract: A method of p-type doping in ZnO is provided. The method includes forming an acceptor-doped material having ZnO under reducing conditions, thereby insuring a high donor density. Also, the specimens of the acceptor-doped material are annealed at intermediate temperatures under oxidizing conditions so as to remove intrinsic donors and activate impurity acceptors.