Abstract: Non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum applications are disclosed. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valves.

Abstract: An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.

Abstract: Methods, systems, apparatuses, and computer programs are presented for controlling plasma discharge uniformity using magnetic fields. A substrate processing apparatus includes a vacuum chamber with a processing zone for processing a substrate. The apparatus further includes a magnetic field sensor to detect a first signal representing an axial magnetic field and a second signal representing a radial magnetic field associated with the vacuum chamber. The apparatus includes at least two magnetic field sources to generate an axial supplemental magnetic field and a radial supplemental magnetic field through the processing zone of the vacuum chamber. The apparatus includes a magnetic field controller coupled to the magnetic field sensor and the at least two magnetic field sources. The magnetic field controller adjusts at least one characteristic of one or more of the axial supplemental magnetic field and the radial supplemental magnetic field based on the first signal and the second signal.

Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.

Abstract: An apparatus may be provided that includes a substrate having one or more microfluidic valve structures. The valve structures are non-elastomeric, non-polymeric, non-metallic membrane valves for use in high-vacuum application. Such valves are functional even when the fluid-control side of the valve is exposed to a sub-atmospheric pressure field which may generally act to collapse/seal traditional elastomeric membrane valve.

Abstract: Disclosed are apparatuses and methods for performing atomic layer etching. A method may include supporting and thermally floating a substrate in a processing chamber, modifying one or more surface layers of material on the substrate by chemical adsorption, without using a plasma, while the substrate is maintained at a first temperature, and removing the one or more modified surface layers by desorption, without using a plasma, while the substrate is maintained at a second temperature, the first temperature being different than the second temperature. An apparatus may include a processing chamber and support features configured to support and thermally float a substrate in the chamber, a process gas unit configured to flow a first process gas onto the substrate, a substrate heating unit configured to heat the substrate, and a substrate cooling unit configured to actively cool the substrate.

Abstract: High aspect ratio features are etched using a plasma etching apparatus that can alternate between accelerating negative ions of reactive species at a low energy and accelerating positive ions of inert gas species at a high energy. The plasma etching apparatus can be divided into at least two regions that separate a plasma-generating space from an ionization space. Negative ions of the reactive species can be generated by electron attachment ionization in the ionization space when a plasma is ignited in the plasma-generating space. Positive ions of the inert gas species can be generated by Penning ionization in the ionization space when the plasma is quenched in the plasma-generating space.

Abstract: A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced apart heater coils. A compliant layer bonds the ceramic puck to a base, the compliant layer comprising a silicon material. The base comprises a channel to circulate fluid therethrough, the channel having a channel inlet and a channel terminus.

Abstract: An apparatus for transporting or storing at least one semiconductor wafer in an ultra-high vacuum is provided. A portable vacuum transfer pod is provided comprising an internal wafer storage chamber for storing one or more wafers and a wafer support for supporting at least one wafer within the internal wafer storage chamber. A passively capable vacuum pump capable of passive vacuum pumping is in fluid connection with the internal wafer storage chamber and is mechanically connected to the portable vacuum transfer pod. A shut off valve for opening and closing the fluid connection is between the passively capable vacuum pump and the internal wafer storage chamber.

Abstract: A substrate support assembly comprises a ceramic puck comprising a substrate receiving surface, and having embedded therein: (i) an electrode to generate an electrostatic force to retain a substrate placed on the substrate receiving surface; and (ii) a heater to heat the substrate, the heater comprising a plurality of spaced apart heater coils. A compliant layer bonds the ceramic puck to a base, the compliant layer comprising a silicon material. The base comprises a channel to circulate fluid therethrough, the channel having a channel inlet and a channel terminus.

Abstract: A substrate support assembly comprises a ceramic puck having a substrate receiving surface and an opposing backside surface. The ceramic puck has an electrode and a heater embedded therein. The heater comprises first and second coils that are radially spaced apart. A base of the support assembly comprises a channel to circulate fluid therethrough, the channel comprising an inlet and terminus that are adjacent to one another so that the channel loops back upon itself. A compliant layer bonds the ceramic puck to the base.

Abstract: A substrate support assembly comprises a ceramic puck having a substrate receiving surface and an opposing backside surface. The ceramic puck has an electrode and a heater embedded therein. The heater comprises first and second coils that are radially spaced apart. A base of the support assembly comprises a channel to circulate fluid therethrough, the channel comprising an inlet and terminus that are adjacent to one another so that the channel loops back upon itself. A compliant layer bonds the ceramic puck to the base.

Abstract: A substrate processing chamber comprises an electrostatic chuck comprising a ceramic puck having a substrate receiving surface and an opposing backside surface. In one version, the ceramic puck comprises a thickness of less than 7 mm. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate, and heater coils in the ceramic puck allow independent control of temperatures at different heating zones of the puck. A chiller provides coolant to coolant channels in a base below the ceramic puck. A controller comprises temperature control instruction sets which set the coolant temperature in the chiller in relation prior to ramping up or down of the power levels applied to the heater.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.

Abstract: Methods and apparatus for controlling plasma in a plasma processing system having at least an inductively coupled plasma (ICP) processing chamber are disclosed. The ICP chamber employs at least a first/center RF coil, a second/edge RF coil disposed concentrically with respect to the first/center RF coil, and a RF coil set having at least a third/mid RF coil disposed concentrically with respect to the first/center RF coil and the second/edge RF coil in a manner such that the third/mid RF coil is disposed in between the first/center RF coil and the second/edge RF coil. During processing, RF currents in the same direction are provided to the first/center RF coil and the second/edge RF coil while RF current in the reverse direction (relative to the direction of the currents provided to the first/center RF coil and the second/edge RF coil) is provided to the third/mid RF coil.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface having a plurality of spaced apart mesas, an opposing backside surface, and central and peripheral portions. A plurality of heat transfer gas conduits traverse the ceramic puck and terminate in ports on the substrate receiving surface to provide heat transfer gas to the substrate receiving surface. An electrode is embedded in the ceramic puck to generate an electrostatic force to retain a substrate placed on the substrate receiving surface. A plurality of heater coils are also embedded in the ceramic puck, the heaters being radially spaced apart and concentric to one another.

Abstract: A gas distribution assembly for the ceiling of a plasma reactor includes a center fed hub and an equal path length distribution gas manifold underlying the center fed hub.

Abstract: An electrostatic chuck for receiving a substrate in a substrate processing chamber comprises a ceramic puck having a substrate receiving surface and an opposing backside surface with a plurality of spaced apart mesas. An electrode is embedded in the ceramic puck to generate an electrostatic force to hold a substrate. Heater coils located at peripheral and central portions of the ceramic puck allow independent control of temperatures of the central and peripheral portions of the ceramic puck. The chuck is supported by a base having a groove with retained air. The chuck and base can also have an overlying edge ring and clamp ring.

Abstract: A pedestal assembly and method for controlling temperature of a substrate during processing is provided. In one embodiment, the pedestal assembly includes an electrostatic chuck coupled to a metallic base. The electrostatic chuck includes at least one chucking electrode and metallic base includes at least two fluidly isolated conduit loops disposed therein. In another embodiment, the pedestal assembly includes a support member that is coupled to a base by a material layer. The material layer has at least two regions having different coefficients of thermal conductivity. In another embodiment, the support member is an electrostatic chuck. In further embodiments, a pedestal assembly has channels formed between the base and support member for providing cooling gas in proximity to the material layer to further control heat transfer between the support member and the base, thereby controlling the temperature profile of a substrate disposed on the support member.

Abstract: A method and apparatus for controlling characteristics of a plasma in a semiconductor substrate processing chamber using a dual frequency RF source is provided. The method comprises supplying a first RF signal to a first electrode disposed in a processing chamber, and supplying a second RF signal to the first electrode, wherein an interaction between the first and second RF signals is used to control at least one characteristic of a plasma formed in the processing chamber.