Abstract: A method of making a semiconductor device for producing or amplifying electromagnetic radiation, more particularly a semiconductor laser, has a substrate which has a mesashaped raised portion. On either side of the mesa there is located a blocking layer of a conductivity type opposite to that of the substrate. On the blocking layer are formed a first passive layer of the same conductivity type as the substrate, an active layer and a second passive layer of a conductivity type opposite to that of the substrate. According to the invention, the blocking layer also extends over the mesa, which is connected by diffusion from at least the first passive layer to the blocking layer.

Abstract: A semiconductor device for producing or amplifying electromagnetic radiation, more particularly a semiconductor laser, has a substrate which has a mesa-shaped raised portion. On either side of the mesa there is located a blocking layer of a conductivity type opposite to that of the substrate. On the blocking layer are formed a first passive layer of the same conductivity type as the substrate, an active layer and a second passive layer of a conductivity type opposite to that of the substrate. According to the invention, the blocking layer also extends over the mesa, which is connected by diffusion from at least the first passive layer to the blocking layer.

Abstract: A method of manufacturing a semiconductor device, in which an epitaxial layer doped with magnesium compounds of elements from the groups III and V of the periodic system of elements is deposited on a surface of a semiconductor body. For this purpose, the semiconductor body is brought into contact with a saturated solution of the compound, in which magnesium is present. Magnesium is added to the solution in the form of magnesium silicide, magnesium germanide or magnesium stannide. Thus, the epitaxial layer can be doped in a very reproducible manner, while moreover defects in the layer due to magnesium oxide particles are prevented.

Abstract: In an arrangement for providing a layer of semiconductor material on a flat side of a substrate from a solution which contains the semiconductor material, the substrate is provided in a recess of a substrate holder which closes the lower side of the reservoir containing the solution. By a relative displacement of the reservoir relative to the substrate holder, the flat side of the substrate is moved below or away from the solution present in the reservoir. The flat side of the substrate is brought to a desired height relative to the lower side of the reservoir, and solution from the reservoir is provided on the substrate. When the reservoir is removed relative to the substrate, a quantity of solution at an adjustable height is left on the substrate.

Abstract: A method of manufacturing a semiconductor device having a monocrystalline substrate and a plurality of epitaxial layers successively deposited on the substrate is disclosed. The device is manufactured by successively contacting the substrate with solutions which are previously saturated by contact with a plurality of auxiliary substrates, in a process in which the monocrystalline substrate, the auxiliary substrates and the solutions are cooled before the layers are deposited. The method includes the steps of contacting a first auxiliary substrate with a first solution, contacting a second auxiliary substrate with this first solution while simultaneously contacting the first auxiliary substrate with a second solution, contacting the monocrystalline substrate with the first solution to deposit a first layer thereon while simultaneously contacting a second auxiliary substrate with the second solution, and then contacting the monocrystalline with the second solution to deposit a second layer thereon.