Patents by Inventor Theodorus Standaert

Theodorus Standaert has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • DRY ETCHBACK OF INTERCONNECT CONTACTS
    Publication number: 20080088027
    Abstract: A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.
    Type: Application
    Filed: November 29, 2007
    Publication date: April 17, 2008
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: THEODORUS STANDAERT, WILLIAM BREARLEY, STEPHEN GRECO, SUJATHA SANKARAN
  • Embedded barrier for dielectric encapsulation
    Publication number: 20070057374
    Abstract: A semiconductor interconnect structure and method providing an embedded barrier layer to prevent damage to the dielectric material during or after Chemical Mechanical Polishing. The method employs a combination of an embedded film, etchback, using either selective CoWP or a conformal cap such as a SiCNH film, to protect the dielectric material from the CMP process as well as subsequent etch, clean and deposition steps of the next interconnect level.
    Type: Application
    Filed: September 13, 2005
    Publication date: March 15, 2007
    Applicant: International Business Machines Corporation
    Inventors: Paul McLaughlin, Sujatha Sankaran, Theodorus Standaert
  • Interconnect structures with encasing cap and methods of making thereof
    Publication number: 20070054489
    Abstract: A method of making an interconnect that includes providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric; and depositing an encasing cap over the extended portion of the interconnect structure.
    Type: Application
    Filed: August 14, 2006
    Publication date: March 8, 2007
    Applicant: International Business Machines Corporation
    Inventors: Kwong Wong, Louis Hsu, Timothy Dalton, Carl Radens, Chih-Chao Yang, Lawrence Clevenger, Theodorus Standaert
  • DRY ETCHBACK OF INTERCONNECT CONTACTS
    Publication number: 20070032055
    Abstract: A method and structure for a composite stud contact interface with a decreased contact resistance and improved reliability. A selective dry etch is used which comprises a fluorine containing gas. The contact resistance is reduced by partially dry-etching back the tungsten contact after or during the M1 RIE process. The recessed contact is then subsequently metalized during the M1 liner/plating process. The tungsten contact height is reduced after it has been fully formed.
    Type: Application
    Filed: August 8, 2005
    Publication date: February 8, 2007
    Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATION
    Inventors: Theodorus Standaert, William Brearley, Stephen Greco, Sujatha Sankaran
  • Interconnect structures with encasing cap and methods of making thereof
    Publication number: 20060160349
    Abstract: A method of making an interconnect comprising: providing an interconnect structure in a dielectric material, recessing the dielectric material such that a portion of the interconnect structure extends above an upper surface of the dielectric; and depositing an encasing cap over the extended portion of the interconnect structure.
    Type: Application
    Filed: January 14, 2005
    Publication date: July 20, 2006
    Applicant: International Business Machines Corporation
    Inventors: Kwong Wong, Louis Hsu, Timothy Dalton, Carl Radens, Chih-Chao Yang, Lawrence Clevenger, Theodorus Standaert
  • INTERLEVEL DIELECTRIC LAYER AND METAL LAYER SEALING
    Publication number: 20060024961
    Abstract: Methods for sealing an organic ILD layer and a metal layer after an etching step. The method includes etching through an ILD layer and leaving a remaining portion of an underlying metal layer cap, maintaining the device in an inert gas, and depositing at least a portion of a liner into the opening to seal the ILD layer and the metal layer. Subsequent processing may include formation of a via by etching through the portion of the liner and the remaining portion of the cap layer, and depositing a metal.
    Type: Application
    Filed: July 29, 2004
    Publication date: February 2, 2006
    Inventors: Matthew Angyal, Peter Biolsi, Lawrence Clevenger, Habib Hichri, Bernd Kastenmeier, Michael Lane, Jeffrey Marino, Vincent McGahay, Theodorus Standaert
  • In-situ liner formation during reactive ion etch
    Publication number: 20050176237
    Abstract: In damascene processing, metal hardmask sputtering redeposition that occurs during reactive ion etching (RIE) is exploited to produce, during the RIE process, a desired barrier metal liner on the etched feature.
    Type: Application
    Filed: February 5, 2004
    Publication date: August 11, 2005
    Inventors: Theodorus Standaert, Bernd Kastenmeier, Yi-Hsiung Lin, Yi-Fang Cheng, Larry Clevenger, Stephen Greco, O Sung Kwon