Abstract: In a compound semiconductor crystal growth process, the crucible (11) that contains the semiconductor melt is contacted on its opposite surface by a material (26) which, when melted, reacts with the crucible. The reacting material is melted along with the compound semiconductor material and thereafter reacts with the wall (24) of the crucible that contains the semiconductor melt. During the entire growth process, the wall is sufficiently thick to separate the reacting material from the compound semiconductor material, but is sufficiently thin that the reacting material significantly weakens its structural integrity. As a consequence, thermal stresses resulting from differential contraction of the compound semiconductor material and the wall during the cooling step are relieved by fracture of the crucible wall.

Abstract: The problem of spurious inclusions of excess Group V material in the growth of III-V crystals is reduced by including, along with the raw material (12) in the crucible, a quantity (13) of the elemental Group V material and encapsulating with boric oxide (14). The crucible is contained within a growth vessel (19) which is in turn contained within a pressure vessel (16) which is first evacuated and then filled to a high pressure with an inert gas such as argon. The inert gas is one which is lighter in weight than the vaporized Group V material, and which is at a higher pressure than the equilibrium pressure of the vaporized Group V material at the melting temperature of the III-V compound. The vaporized Group V material displaces the argon in the growth vessel (19). The inventive process also reduces defects in the grown crystal.