Abstract: An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.

Abstract: An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.

Abstract: An enhanced conductive probe that facilitates the gathering of data and a method of fabricating the probe. The probe includes an amplifier fabricated to define the probe tip. More particularly, the probe structure is defined by an amplifier formed as one of a metal oxide semiconductor (MOS) transistor, a bipolar amplifier, or a metal semiconductor field effect transistor (MESFET), thereby providing for the amplification of the input signal and improved signal to noise ratio during operation of the probe tip.

Abstract: An apparatus and method for providing a topographical and thermal image of a semiconductor device. A probe (10) is made from a first ribbon of material (11) and a second ribbon of material (12) which forms a thermocouple junction (13). A probe tip (15) is then attached to the thermocouple junction (13) with an epoxy (14). In an alternate embodiment of the present invention, a probe (20) has a point region (17) which is formed by bending a portion of the thermocouple junction (13) and coating the point region (17) is coated with a thermally conductive material. An optical signal is then reflected off a planar portion of the first ribbon of material (11), the second ribbon of material (12), or the thermocouple junction (13) so the motion of the probe (10,20) can be monitored by an optical detector.

Abstract: A probe (10) is formed to provide a topographical and thermal image of a semiconductor device. The probe (10) is made from a first ribbon of material (11) and a second ribbon of material (12) which forms a thermocouple junction (13). A probe tip (15) is then attached to the thermocouple junction (13) with an epoxy (14). In an alternate embodiment of the present invention, a probe (20) has a point region (17) which is formed by bending a portion of the thermocouple junction (13) and coating the point region (17) is coated with a thermally conductive material. An optical signal is then reflected off a planar portion of the first ribbon of material (11), the second ribbon of material (12), or the thermocouple junction (13) so the motion of the probe (10,20) can be monitored by an optical detector.

Abstract: A probe (10,30,40) for forming images of surfaces (11) facilitates simultaneous formation of both thermal and atomic force microsocopy images. The probe (10,30,40) includes a heat sensing assembly (15) that has a heat sensing element (19,38,42). An electrically isolating and thermally conductive tip (22,48) projects from the heat sensing assembly. The probe (10) also has a reflective element (24) that is positioned between a first end of the heat sensing assembly (15) and the electrically isolating and thermally conductive tip (22).

Abstract: A probe (10,30,40) for forming images of surfaces (11) facilitates simultaneous formation of both thermal and atomic force microsocopy images. The probe (10,30,40) includes a heat sensing assembly (15) that has a heat sensing element (19,38,42). An electrically isolating and thermally conductive tip (22,48) projects from the heat sensing assembly. The probe (10) also has a reflective element (24) that is positioned between a first end of the heat sensing assembly (15) and the electrically isolating and thermally conductive tip (22).