Patents by Inventor Therese Gibart, legal representative

Therese Gibart, legal representative has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Process for growth of low dislocation density GaN
    Patent number: 8283239
    Abstract: High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 106 cm?2.
    Type: Grant
    Filed: December 15, 2006
    Date of Patent: October 9, 2012
    Assignee: Saint-Gobain Cristaux & Detecteurs
    Inventors: Bernard Beaumont, Jean-Pierre Faurie, Pierre Gibart, Therese Gibart, legal representative