Abstract: A method for wafer treatment is disclosed. A wafer is provided with a main surface, a surface layer, and a base layer. The surface layer is disposed between the main surface and the base layer, and the surface layer covers the base layer and exposes the main surface. Then, at least one laser process is performed to fully irradiate the main surface and the surface layer with a first laser to generate a plurality of optimized regions in the main surface and the surface layer, so that the optimized regions form at least one stress-relieving array.

Abstract: A method for a wafer treatment includes providing a wafer including a main surface, a surface layer and a base layer; and performing at least one laser process to irradiate the whole surface layer with laser to thereby generate a plurality of defect regions in the surface layer, and the defect regions form at least one array of defect regions.

Abstract: A method for wafers treatment is disclosed. First, a wafer including a wafer base is provided, where the wafer base includes a surface layer. Second, a first laser process is performed, wherein the surface layer of the wafer is irradiated with a first laser to modify the surface layer. The first laser is associated with a first parameter group. Next, a second laser process is performed, wherein the surface layer of the wafer is irradiated with a second laser to modify the surface layer. The second laser is associated with a second parameter group. Modification of the surface layer includes at least one of removing the surface layer, changing the crystallinity of the surface layer, or changing the surface roughness of the surface layer. The first parameter group corresponds to the second parameter group.