Abstract: The reactor (R) has a reaction chamber (RC) provided with a support (S) for metallic pieces and with a system of an anode, connected to a ground, and of a cathode system connected to the support (S) and to a pulsating DC power supply. In the reaction chamber (RC), heated and supplied with a gas load, is formed, by means of an electric discharge in the cathode, a gas plasma. A liquid or gas precursor is admitted in at least one tubular cracking chamber associated with a high voltage energy source. It may be provided at least one tubular sputtering chamber associated with an electric power supply receiving a solid precursor. A potential difference is applied between the anode and one and/or other of said tubular chambers, to release the alloy elements to be ionically bombarded against the metallic pieces, either simultaneously or individually and in any order.

Abstract: The reactor (R) has a reaction chamber (RC) provided with a support (S) for metallic pieces and with a system of an anode, connected to a ground, and of a cathode system connected to the support (S) and to a pulsating DC power supply. In the reaction chamber (RC), heated and supplied with a gas load, is formed, by means of an electric discharge in the cathode, a gas plasma. A liquid or gas precursor is admitted in at least one tubular cracking chamber associated with a high voltage energy source. It may be provided at least one tubular sputtering chamber associated with an electric power supply receiving a solid precursor. A potential difference is applied between the anode and one and/or other of said tubular chambers, to release the alloy elements to be ionically bombarded against the metallic pieces, either simultaneously or individually and in any order.