Patents by Inventor THIBAUT DAVID
THIBAUT DAVID has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9953807Abstract: A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.Type: GrantFiled: June 2, 2017Date of Patent: April 24, 2018Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Stefan Landis, Sebastien Barnola, Thibaut David, Lamia Nouri, Nicolas Posseme
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Patent number: 9934973Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patternType: GrantFiled: December 22, 2015Date of Patent: April 3, 2018Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Stefan Landis, Nicolas Posseme, Sebastien Barnola, Thibaut David, Lamia Nouri
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Publication number: 20170372904Abstract: The invention relates in particular to a method for producing subsequent patterns in an underlying layer (120), the method comprising at least one step of producing prior patterns in a carbon imprintable layer (110) on top of the underlying layer (120), the production of the prior patterns involving nanoimprinting of the imprintable layer (110) and leave in place a continuous layer formed by the imprintable layer (110) and covering the underlying layer (120), characterized in that it comprises the following step: at least one step of modifying the underlying layer (120) via ion implantation (421) in the underlying layer (120), the implantation (421) being carried out through the imprintable layer (110) comprising the subsequent patterns, the parameters of the implantation (421) being chosen in such a way as to form, in the underlying layer (120), implanted zones (122) and non-implanted zones, the non-Implanted zones defining the subsequent patterns and having a geometry that is dependent on the prior patternType: ApplicationFiled: December 22, 2015Publication date: December 28, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Stephan LANDIS, Nicolas POSSEME, Sebastien BARNOLA, Thibaut DAVID, Lamia NOURI
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Publication number: 20170352522Abstract: A method for forming reliefs on the surface of a substrate, including a first implantation of ions in the substrate according to a first direction; a second implantation of ions in the substrate according to a second direction that is different from the first direction; at least one of the first and second implantations is carried out through at least one mask having at least one pattern; an etching of areas of the substrate having received by implantation a dose greater than or equal to a threshold, selectively to the areas of the substrate that have not received via implantation a dose greater than said threshold; the parameters of the first and second implantations being adjusted in such a way that only areas of the substrate that have been implanted both during the first implantation and during the second implantation receive a dose greater than or equal to said threshold.Type: ApplicationFiled: June 2, 2017Publication date: December 7, 2017Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVESInventors: Stefan LANDIS, Sebastien BARNOLA, Thibaut DAVID, Lamia NOURI, Nicolas POSSEME
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Patent number: 9583339Abstract: A method is provided for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, including forming a layer of nitride covering the gate; modifying the layer by plasma implantation of light ions, having an atomic number equal or less than 10, in the layer in order to form a modified layer of nitride, the modifying being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate; and removing the modified layer of nitride by a selective wet or dry etching, of the modified layer relative to said layer of semiconductor material and relative to the non-modified layer at the flanks of the gate, without etching the layer of semiconductor material, wherein an entire length of the non-modified layer at the flanks remains after the selective wet or dry etching.Type: GrantFiled: April 6, 2016Date of Patent: February 28, 2017Assignees: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS-Centre National de la Recherche Scientifique, APPLIED MATERIALS, Inc.Inventors: Nicolas Posseme, Thibaut David, Olivier Joubert, Thorsten Lill, Srinivas Nemani, Laurent Vallier
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Publication number: 20160300709Abstract: A method is provided for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, including forming a layer of nitride covering the gate; modifying the layer by plasma implantation of light ions, having an atomic number equal or less than 10, in the layer in order to form a modified layer of nitride, the modifying being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate; and removing the modified layer of nitride by a selective wet or dry etching, of the modified layer relative to said layer of semiconductor material and relative to the non-modified layer at the flanks of the gate, without etching the layer of semiconductor material, wherein an entire length of the non-modified layer at the flanks remains after the selective wet or dry etching.Type: ApplicationFiled: April 6, 2016Publication date: October 13, 2016Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES, CNRS Centre National de la Recherche Scientifique, APPLIED MATERIALS, Inc.Inventors: Nicolas POSSEME, Thibaut David, Olivier Joubert, Thorsten Lill, Srinivas Nemani, Laurent Vallier
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Patent number: 9257293Abstract: Embodiments of methods of forming silicon nitride spacers are provided herein. In some embodiments, a method of forming silicon nitride spacers atop a substrate includes: depositing a silicon nitride layer atop an exposed silicon containing layer and an at least partially formed gate stack disposed atop a substrate; modifying a portion of the silicon nitride layer by exposing the silicon nitride layer to a hydrogen or helium containing plasma that is substantially free of fluorine; and removing the modified portion of the silicon nitride layer by performing a wet cleaning process to form the silicon nitride spacers, wherein the wet cleaning process removes the modified portion of the silicon nitride layer selectively to the silicon containing layer.Type: GrantFiled: March 12, 2014Date of Patent: February 9, 2016Assignee: APPLIED MATERIALS, INC.Inventors: Nicolas Posseme, Olivier Joubert, Thibaut David, Thorsten Lill
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Publication number: 20140273292Abstract: Embodiments of methods of forming silicon nitride spacers are provided herein. In some embodiments, a method of forming silicon nitride spacers atop a substrate includes: depositing a silicon nitride layer atop an exposed silicon containing layer and an at least partially formed gate stack disposed atop a substrate; modifying a portion of the silicon nitride layer by exposing the silicon nitride layer to a hydrogen or helium containing plasma that is substantially free of fluorine; and removing the modified portion of the silicon nitride layer by performing a wet cleaning process to form the silicon nitride spacers, wherein the wet cleaning process removes the modified portion of the silicon nitride layer selectively to the silicon containing layer.Type: ApplicationFiled: March 12, 2014Publication date: September 18, 2014Applicant: Applied Materials, Inc.Inventors: NICOLAS POSSEME, OLIVIER JOUBERT, THIBAUT DAVID, THORSTEN LILL
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Publication number: 20140187046Abstract: The invention relates to a method for forming spacers for a gate of a field effect transistor, the gate being situated above a layer of semiconductor material, comprising a step of forming a layer of nitride covering the transistor gate, the method being characterized in that it comprises: after the step of forming the layer of nitride, at least one step of modifying the layer of nitride by implantation of light ions in the layer of nitride in order to form a modified layer of nitride, the step of modification being performed so as not to modify the layer of nitride over its entire thickness at flanks of the gate, the step of modifying the layer of nitride by implantation being performed using a plasma comprising the light ions; at least one step of removing the modified layer of nitride by means of a selective etching of the modified layer of nitride vis-à-vis said semiconductor material and vis-à-vis the non-modified layer of nitrideType: ApplicationFiled: December 27, 2013Publication date: July 3, 2014Applicants: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT, APPLIED MATERIALS, Inc., CNRS Centre National de la Recherche ScientifiqueInventors: Nicolas POSSEME, Thibaut DAVID, Olivier JOUBERT, Torsten LILL, Srinivas NEMANI, Laurent VALLIER
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Publication number: 20130329043Abstract: A method and apparatus for selective transmission of color information to a remote recognition system is provided herein. During operation, a central server may determine that at least one region in an image is ambiguously recognized, or unrecognized. In response, the central server will send a request for the image/video to be provided in color, or alternatively for a portion of the image/video to be provided in color. Because only selective images, or portions of images will be transmitted in color, the above transmission scheme enables reduction of bandwidth, and hence cost, required for transmitting images to the analytics server, without compromising the accuracy of the analytics.Type: ApplicationFiled: June 11, 2012Publication date: December 12, 2013Applicant: MOTOROLA SOLUTIONS, INC.Inventors: BOAZ J. SUPER, THIBAUT DAVID, MIKLOS STERN, BRUNO VANDE VYVRE