Abstract: An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level, has a drain-source current characteristic as a function of the gate-source voltage which exhibits a negative transconductance zone beyond a maximum, the slopes of the characteristic on both sides thereof being substantially symmetrical so that two values of the gate-source voltage which are symmetrical with respect to said maximum correspond substantially to the same value of the drain source current, and in that the transistor comprises biasing means ensuring that its operating zone is situated in the region of said characteristic around said maximum.

Abstract: An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level in order to obtain for the transistor an N-shaped drain-source current characteristic as a function of the drain-source voltage so that it presents a negative differential conductance zone, characterized in that it comprises means for applying, between the drain and the source of the field effect transistor, a voltage whose value is in the range of values the drain-source voltage corresponding to the negative conductance zone.