Patents by Inventor Thierry Billon

Thierry Billon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8326303
    Abstract: The present invention provides a method of determining handoff parameters. One embodiment of the method includes determining values of a hysteresis for a handoff from a serving cell, one or more pairwise offset values for hand off between the serving cell and one or more neighbor cells, and one or more times-to-trigger (TTTs) for hand off between the serving cell and the neighbor cell(s). The values may be determined So that hand off is triggered beyond a first distance from the serving cell selected to avoid ping-ponging and within a second distance from the serving cell selected so that a mobile unit moving at a selected velocity does not travel beyond a third distance within the TTT.
    Type: Grant
    Filed: June 30, 2010
    Date of Patent: December 4, 2012
    Assignee: Alcatel Lucent
    Inventors: Gopal N. Kumar, Thierry Billon, Victor Da Silva, Jean-Michel Pugeat, Richard L. Davies, Robert A. Soni, Frederick Deville
  • Publication number: 20110092210
    Abstract: The present invention provides a method of determining handoff parameters. One embodiment of the method includes determining values of a hysteresis for a handoff from a serving cell, one or more pairwise offset values for hand off between the serving cell and one or more neighbor cells, and one or more times-to-trigger (TTTs) for hand off between the serving cell and the neighbor cell(s). The values may be determined So that hand off is triggered beyond a first distance from the serving cell selected to avoid ping-ponging and within a second distance from the serving cell selected so that a mobile unit moving at a selected velocity does not travel beyond a third distance within the TTT.
    Type: Application
    Filed: June 30, 2010
    Publication date: April 21, 2011
    Inventors: Gopal N. Kumar, Thierry Billon, Victor Da Silva, Jean-Michel Pugeat, Richard L. Davies, Robert A. Soni, Frederic Deville
  • Publication number: 20070142075
    Abstract: A method for controlling the transmission power on a radio channel arranged for transmitting signals carrying elements of information arranged in successive timeslots from a first station to a second station, the radio channel including a data channel and a substantially permanent control channel, the transmission power in a timeslot depending on a reception level, at the second station, of the signal transmitted in a preceding timeslot and on a target level, said target level being set in accordance with an error rate calculated from the elements of information received from the first station. The error rate further takes account of a quality estimate on said control channel when at least one element of information is not transmitted.
    Type: Application
    Filed: September 29, 2006
    Publication date: June 21, 2007
    Applicant: Nortel Networks Limited
    Inventors: Thierry Billon, Samuel Betrencourt
  • Patent number: 7166894
    Abstract: The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
    Type: Grant
    Filed: March 12, 2003
    Date of Patent: January 23, 2007
    Assignee: Commissariat a l'Energie Atomique
    Inventors: François Templier, Thierry Billon, Nicolas Daval
  • Publication number: 20060125057
    Abstract: The invention relates to an SiCOI type composite substrate manufacturing method comprising the following steps: supply of an initial substrate comprising an Si or SiC support (1) bearing a layer (2) of SiO2 whereon a thin layer (3) of SiC is transferred, epitaxy of SiC (4) on the thin layer (3) of SiC. The epitaxy is conducted at the following temperatures from 1450° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of SiC, from 1350° C. to obtain 3C polytype epitaxy (4) on a transferred thin 3C polytype layer (3), if the support (1) consists of Si or SiC, from 1350° C. to obtain 6H or 4H polytype epitaxy (4) on a transferred thin 6H or 4H polytype layer (3) respectively, if the support (1) consists of Si.
    Type: Application
    Filed: September 1, 2003
    Publication date: June 15, 2006
    Inventors: Lea Di Cioccio, Francois Templier, Thierry Billon, Fabrice Letertre
  • Patent number: 6975869
    Abstract: For each base station serving mobile stations in a cell, measurements carried out on radio channels in the cell are used to obtain values of a quantity compared to one or several associated parameters in a procedure managing radio resources allocated to the mobile stations. A statistic of the obtained values the quantity is maintained. The value of each associated parameter for the cell is adapted such that, according to the statistic, a predetermined fraction of the values of the quantity obtained from the measurements are higher than the associated parameter value.
    Type: Grant
    Filed: June 23, 1999
    Date of Patent: December 13, 2005
    Assignee: Nortel Matra Cellular
    Inventor: Thierry Billon
  • Publication number: 20050258483
    Abstract: The invention relates to a power semiconducting device made from a semiconducting material epitaxied on a stacked structure (10) comprising a layer of semiconducting material (13) transferred onto a first face of a support substrate (11) and fixed to the support substrate by an electrically insulating layer (12), the support substrate comprising electrically conducting means between said first face and a second face, the transferred layer of semiconducting material (13) acting as an epitaxy support for the epitaxied semiconducting material (14, 15).
    Type: Application
    Filed: September 1, 2003
    Publication date: November 24, 2005
    Applicant: Commissariat a l'ENERGIE ATOMIQUE
    Inventors: Francois Templier, Lea Di Cioccio, Thierry Billon, Fabrice Letertre
  • Publication number: 20050161760
    Abstract: The present invention relates to a power junction device including a substrate of the SiCOI type with a layer of silicon carbide (16) insulated from a solid carrier (12) by a buried layer of insulant (14), and including at least one Schottky contact between a first metal layer (40) and the surface layer of silicon carbide (16), the first metal layer (30) constituting an anode.
    Type: Application
    Filed: March 12, 2003
    Publication date: July 28, 2005
    Applicants: Commissarist A L'Energie Atomique, S.O.I TEC Silicon On Insulator Technologies
    Inventors: Francois Templier, Thierry Billon, Nicolas Daval
  • Publication number: 20040147271
    Abstract: An infrastructure of a radiocommunication network transmits mobile station paging messages. Each paging message transmitted is preceded by a paging indication message comprising paging indication information identifying a mobile station intended to receive a request contained in the paging message. The paging indication message further comprises a repetition indication field to indicate whether the paging message contains at least one request already contained in a previously transmitted paging message.
    Type: Application
    Filed: December 17, 2003
    Publication date: July 29, 2004
    Applicant: NORTEL NETWORKS LIMITED
    Inventors: Thierry Billon, Christophe Gruet
  • Patent number: 6636736
    Abstract: A system for allocating a resource to a terminal in a cellular mobile radio network in which each cell of the network is identified by a primary color and a secondary color which correspond to transmission frequencies allocated to it, namely and respectively a set of primary frequencies (FP) and a set of secondary frequencies (FS) whose rate of re-use is higher than that of said primary frequencies (FP), and the terminal is connected to a local cell (A1). The system knows a potential level of interference (N) received by the terminal and allocates said resource to said terminal on a primary frequency (FP) or on a secondary frequency (FS) according to whether said potential level of interference (N) is respectively above or below a first distribution threshold (S1).
    Type: Grant
    Filed: July 13, 2000
    Date of Patent: October 21, 2003
    Assignee: Nortel Networks Limited
    Inventor: Thierry Billon
  • Patent number: 6490442
    Abstract: A system for provisionally estimating the carrier-to-interference ratio of a terminal in a cellular mobile radio network which transmits sets of primary frequencies and sets of secondary frequencies and in which the rate of re-use of the sets of secondary frequencies is higher than that of the sets of primary frequencies. The system knows the level received by said terminal from a local cell (A1) to which it is connected. It also knows the levels (LB2, LC3, LD2, LE1, LG2, LF1) received by said terminal from adjoining cells (B2, C3, D2, E1, G2, F1). It selects a reference cell (B2) from said local cell and said adjoining cells, produces a potential noise by calculating the sum (N1) of the levels (LD2, LG2) received from the cells (D2, G2) using the same secondary frequencies as said reference cell (B2), and supplies said estimate in the reference cell (B2) by dividing the level received from said reference cell by the potential noise.
    Type: Grant
    Filed: July 13, 2000
    Date of Patent: December 3, 2002
    Inventor: Thierry Billon
  • Patent number: 6225651
    Abstract: The invention relates to a structure comprising a micro-electronic component (20) produced in a semi-conductor material difficult to etch. This structure is obtained by rigidly fixing a thin film (12) of the semi-conductor material that is difficult to etch onto the surface before attaching a first substrate made of a material that is easy to etch and which serves as a support. The micro-electronic component (20) is produced in the thin film (12) and a hole (33) passing right through is etched in the structure and metallized (35) in such a way that it electrically connects an electrode (18) formed on the back surface of the first substrate to an electrode (24) of the micro-electronic component (20).
    Type: Grant
    Filed: June 11, 1998
    Date of Patent: May 1, 2001
    Assignee: Commissariat a l'Energie Atomique
    Inventor: Thierry Billon