Abstract: A memory accessible in read mode only comprises storage elements designed to contain a bit that can assume two levels. Each memory cell comprises a transistor. The transistor of the storage element may include an associated circuit portion to prompt a short circuit between the drain and the source of the transistor if the storage element has to contain one bit at one of the two levels. Furthermore, the use of an unbalanced differential amplifier permits an improvement of the access time of the memory.

Abstract: A transition detection device, generating a variable-duration pulse, such as an enable signal for the input circuits of a CMOS static memory circuit, receiving an input signal that includes a delay circuit of determined delay value, making it possible to generate a delayed enable signal, with a safety margin of duration equal to the delay value. A calibration circuit is provided, which includes an exclusive-OR circuit receiving the input signal on a first input. A controlled delay circuit is provided to deliver an input signal delayed by a second delay value to a second input of the exclusive-OR circuit, which, upon access by the CEB signal, delivers a calibrated output pulse of duration equal to the second delay value, and truncated pulses for any transition occurring on the other inputs of the circuit, in the presence of address transitions or of other, not strictly simultaneous, inputs.

Abstract: An output circuit for a TTL-CMOS integrated circuit that comprises an output stage with two P MOS and N MOS transistors in parallel, which are connected in cascade with an N MOS enabling transistor between the power supply and the reference voltages. The output stage connected by means of a validation signal TRISB and of P and N MOS transistors delivers an output signal representing the input logic variable to the common point between the P MOS transistor and enabling transistor. A first circuit allows switching of the P MOS transistor by an intermediate switching control signal TRISP and a third circuit allows switching of the N MOS transistor, the circuit operating in mode of feedback of the switching control of the P MOS transistor, the controls being applied successively in order to generate an intermediate switching level belonging to the high logic level.