Abstract: The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.

Abstract: The present invention is related to a method for forming a metal silicide layer on a textured silicon substrate surface. The method includes providing a metal layer on a textured silicon substrate and performing a pulsed laser annealing step providing at least one UV laser pulse with a laser fluence in the range between 0.1 J/cm2 and 1.5 J/cm2 and with a laser pulse duration in the range between 1 ns and 10 ms. Then, the method includes converting at least part of the metal layer into a metal silicide layer. In addition, the present invention is related to the use of such a method in a process for fabricating a photovoltaic cell, wherein the dielectric layer is a surface passivation layer, or wherein the dielectric layer is an antireflection coating.

Abstract: A method for fabricating a photovoltaic device, including depositing a TCO-layer on a substrate and annealing the TCO layer by laser irradiation having irradiation parameters, wherein the irradiation parameters are selected such that the annealing includes increasing the haze % of the TCO layer compared to the as deposited TCO layer. Additionally, a TCO layer having a haze % of at least 2% in the visible light wavelength range and a surface roughness of less than 0 nanometer RMS, and a photovoltaic device including such TCO-layer.

Abstract: A method for forming a selective contact for a photovoltaic cell is disclosed. The method includes forming a doped contact layer at the surface of a semiconductor substrate and annealing a portion of the doped contact layer with a laser beam, the portion having a 2D-pattern corresponding to at least a portion of a respective selective contact grid. Wherein the laser beam is pulsed and shaped to the 2D-pattern. A photovoltaic cell having a selective contact formed by the method is also provided.

Abstract: A field emission device has a basic substrate whose surface is coated with a conductive layer that forms an electrode. A field emission emitter which is formed as a micro-tip, is electrically connected to the electrode. Between the micro-tip and the electrode, a current limiting resistive silicon film is arranged and the resistivity of the silicon film is adjusted to be in a value ranging from about 10.sup.2 to about 10.sup.5 .OMEGA.cm by an n- or p-dopant. The silicon film contains an alloying element which would be able to form a silicon ceramic if used in a stoichiometric amount but would not be able to dope the silicon.

Abstract: An apparatus for plasma treating workpieces in vacuum includes a stack of plasma chambers (20). Handling of workpieces to and from the plasma chambers of the stack is performed in parallelism by one handling device and through lateral handling openings of the plasma chambers. The handling device is rotatable around an axis parallel to the handling openings of the plasma chambers and comprises transport apparatus simultaneously movable radially with respect to the axis of rotation towards and from the handling openings.

Abstract: The specification discloses a photovoltaic device comprising a transparent, electrically insulating substrate, a plurality of photoelectric conversion elements using thin-layer technology, disposed as a stack on the substrate, these photoelectric conversion elements comprising a layer of material forming an opaque electrode traversed by cuts or openings, the latter advantageously exhibiting a groove shape which is elongate in a transverse direction of the cell and forming between them bands of material which are favorably oriented in the direction of the photogenerated current lines. A reinforced insulation of the cuts by a protective shoulder between layers may be provided. The invention permits partial-transparency solar cells or modules to be obtained.